UM6K33N_技术文档

1.2V Drive Nch + Nch MOSFET

UM6K33N

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT6

(SC-88)

<SOT-363>

Features

1) High speed switing.

2) Small package(UMT6).

3) Ultra low voltage drive(1.2V drive).

(6) (5) (4)

(1) (2) (3)

Application

Switching

Abbreviated symbol : K33

Packaging specifications

Inner circuit

(6)

(5)

(4)

Package

Taping

TN

Type

Code

∗1

Basic ordering unit (pieces)

3000



∗2

UM6K33N



∗1

(1) Tr1 SOURCE

(2) Tr1 GATE

(3) Tr2 DRAIN

(4) Tr2 SOURCE

(5) Tr2 GATE

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(6) Tr1 DRAIN

Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

50

Unit

V

Gate-source voltage

8

V

Continuous

Pulsed

200

800

125

800

150

120

150

mA

Drain current

*1

I_DP

I_s

Continuous

Pulsed

Source current

(Body Diode)

*1

*2

I_sp

mW / TOTAL

P_D

Power dissipation

mW / ELEMENT

Channel temperature

Tch

C

Range of storage temperature

*1 Pw10s, Duty cycle1%

Tstg

55 to +150

*2 Each terminal mounted on a recommended land.



Thermal resistance

Parameter

Symbol

Limits

Unit

*

833

°C / W /TOTAL

Channel to ambient

Rth (ch-a)

1042

°C / W /ELEMENT

* Each terminal mounted on a recommended land.



www.rohm.com

2010.01 - Rev.A

1/5

c

UM6K33N

Data Sheet

Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

-

Max.

Unit

A V_GS=8V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=50V, V_GS=0V

Conditions

Gate-source leakage

-

10

Drain-source breakdown voltage V _(BR)DSS

50

-

1

V

Zero gate voltage drain current

Gate threshold voltage

I_DSS

-

V_{GS (th)}

0.3

-

1.0

2.2

2.4

2.7

4.0

7.2

-

V

V_DS=10V, I_D=1mA

-

1.6

1.7

1.9

2.0

2.4

-

I_D=200mA, V_GS=4.5V

I_D=200mA, V_GS=2.5V

I_D=100mA, V_GS=1.8V

I_D=40mA, V_GS=1.5V

I_D=20mA, V_GS=1.2V

I_D=200mA, V_DS=10V

-

Static drain-source on-state

resistance

*

R_{DS (on)}



-

*

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

0.4

S

C_iss

C_oss

C_rss

t_d(on)

t_r

-

25

6

-

pF V_DS=10V

-

pF V_GS=0V

3

-

pF f=1MHz

*

4

-

ns I_D=100mA, V_DD30V

ns V_GS=4.5V

ns R_L=300

ns R_G=10

6

-

Turn-off delay time

Fall time

t_d(off)

t_f

15

55

-

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward voltage

Symbol

Min.

-

Typ.

-

Max. Unit

1.2

Conditions

*

V_SD

V

I_s=200mA, V_GS=0V

*Pulsed

www.rohm.com

2010.01 - Rev.A

2/5

c

UM6K33N

Data Sheet

Electrical characteristic curves

0.4

0.3

0.2

0.1

0

1

0.1

V_DS= 10V

Pulsed

V_GS= 4.5V

_GS= 2.5V

Ta=25°C

Pulsed

V_GS= 4.5V

V

_GS= 2.5V

_GS=1.8V

V_GS=1.5V

V_GS=1.8V

V_GS=1.5V

Ta=25°C

Pulsed

0.3

0.2

0.1

0

V

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

V_GS= 1.2V

V_GS=1.2V

V_GS=1.0V

V_GS=0.8V

V_GS= 1.0V

0.01

0.001

V_GS= 0.8V

0.8

0

0.5

1

1.5

2

0

0.2

0.4

0.6

1

0

2

4

6

8

10

DRAIN-SOURCE VOLTAGE : V_DS[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics( I )

Fig.2 Typical Output Characteristics( II )

100

10

1

100

10

1

100

Ta= 25°C

Pulsed

V_GS= 2.5V

Pulsed

V_GS= 4.5V

V_GS=1.2V

_GS= 1.5V

V_GS= 1.8V

Ta=125°C

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

V

Ta=75°C

Ta=25°C

Ta= -25°C

10

1

V

_GS= 2.5V

_GS= 4.5V

0.1

0.01

0.1

1

0.01

0.1

1

0.01

0.1

DRAIN-CURRENT : I_D[A]

1

DRAIN-CURRENT : I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current( I )

Fig.5 Static Drain-Source On-State

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current( III )

Resistance vs. Drain Current( II )

100

10

1

100

10

1

100

10

1

V_GS= 1.2V

Pulsed

V_GS= 1.8V

Pulsed

V_GS= 1.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

0.01

0.1

1

0.01

0.1

1

0.01

0.1

1

DRAIN-CURRENT : I_D[A]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current( IV )

Fig.9 Static Drain-Source On-State

Resistance vs. Drain Current( VI )

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current( V )

www.rohm.com

2010.01 - Rev.A

3/5

c

UM6K33N

Data Sheet

10

9

8

7

6

5

4

3

2

1

0

1

Ta=25°C

Pulsed

V_GS=0V

Pulsed

V_DS= 10V

Pulsed

I_D= 20mA

I_D=200mA

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.01

0.1

0

5

10

0

0.5

1

1.5

0.001

0.01

0.1

1

DRAIN-CURRENT : I_D[A]

SOURCE-DRAIN VOLTAGE : V_SD[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.12 Static Drain-Source On-State

Fig.10 Forward Transfer Admittance

vs. Drain Current

Fig.11 Reverse Drain Current

vs. Sourse-Drain Voltage

Resistance vs. Gate Source Voltage

1000

100

10

1000

100

10

Ta=25°C

V_DD=30V

Ta=25°C

f=1MHz

V

_GS=0V

V

_GS=4.5V

C_iss

t_f

R_G=10

t_d(off)

Pulsed

t_r

C_rss

C_oss

1

t_d(on)

1

0.1

0.01

0.1

1

0.01

0.1

1

10

100

DRAIN-CURRENT : I_D[A]

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.13 Switching Characteristics

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

www.rohm.com

2010.01 - Rev.A

4/5

c

UM6K33N

Data Sheet

Measurement circuits

Pulse width

90%

V

GS

I

D

VDS

50%

10%

50%

V

GS

DS

R

L

10%

90%

D.U.T.

V

DD

RG

90%

t

d(on)

td(off)

t

r

tf

t

on

toff

Fig.1-1 Switching time measurement circuit

Fig.1-2 Switching waveforms

Notice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

www.rohm.com

2010.01 - Rev.A

5/5

c

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, ﬁre or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, ﬁre control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-

controller or other safety device). ROHM shall bear no responsibility in any way for use of any

of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology speciﬁed herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1010

A


型号：	UM6K33N
厂家：	ROHM
描述：	1.2V Drive Nch + Nch MOSFET 1.2V驱动N沟道+ N沟道MOSFET 驱动
文件：	总6页 (文件大小：187K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UM6K33N [ROHM]

相关型号：

UM6K33NTN

UM6K33N_10

UM6K34N

UM6K34NTCN

UM7000

UM7000_05

UM7000_09

UM7001

UM7001A

UM7001AE3

UM7001B

UM7001BE3