UML6N [ROHM]

General purpose transistor (isolated transistor and diode); 通用晶体管(隔离的晶体管和二极管)
UML6N
型号: UML6N
厂家: ROHM    ROHM
描述:

General purpose transistor (isolated transistor and diode)
通用晶体管(隔离的晶体管和二极管)

晶体 二极管 晶体管
文件: 总4页 (文件大小:82K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UML6N  
Transistors  
General purpose transistor  
(isolated transistor and diode)  
UML6N  
2SA2018 and RB521S-30 are housed independently in a UMT package.  
zExternal dimensions (Unit : mm)  
zApplications  
DC / DC converter  
Motor driver  
zFeatures  
1) Tr : Low VCE(sat)  
Di : Low VF  
1.25  
2.1  
2) Small package  
0.1Min.  
zStructure  
Silicon epitaxial planar transistor  
Schottky barrier diode  
Each lead has same dimensions  
ROHM : UMT5  
EIAJ : SC-88A  
zEquivalent circuit  
(3) (2)  
(1)  
Tr2  
Di1  
(4)  
(5)  
zPackaging specifications  
Type  
Package  
Marking  
Code  
UML6N  
UMT5  
L6  
TR  
Basic ordering unit (pieces) 3000  
Rev.A  
1/3  
UML6N  
Transistors  
zAbsolute maximum ratings (Ta=25°C)  
Di1  
Parameter  
Symbol  
Limits  
200  
1
Unit  
mA  
A
Average revtified forward current  
Forward current surge peak (60Hz, 1)  
Reverse voltage (DC)  
IO  
I
FSM  
V
R
30  
V
Junction temperature  
Range of storage temperature  
Tj  
Tstg  
125  
55~+125  
°C  
°C  
Tr2  
Parameter  
Symbol  
Limits  
15  
12  
Unit  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
6
V
I
C
500  
1
mA  
A
Collector current  
I
CP  
1  
Power dissipation  
Junction temperature  
Range of storage temperature  
P
Tj  
Tstg  
d
120  
150  
55~+125  
mW  
°C  
°C  
1 Each terminal mounted on a recommended land.  
zElectrical characteristics (Ta=25°C)  
Di1  
Parameter  
Forward voltage  
Reverse current  
Symbol  
Min.  
Typ.  
0.40  
4.0  
Max.  
0.50  
30  
Unit  
V
Conditions  
Conditions  
VR  
I
F
=200mA  
I
R
µA  
VR=10V  
Tr2  
Parameter  
Symbol  
BVCEO  
BVCBO  
BVEBO  
Min.  
Typ.  
Max.  
Unit  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
12  
15  
6
90  
320  
7.5  
100  
100  
250  
680  
V
V
I
I
I
C
=1mA  
C=10µA  
V
E
=10µA  
CB=15V  
EB=6V  
I
CBO  
EBO  
CE(sat)  
FE  
270  
nA  
nA  
mV  
MHz  
pF  
V
V
Emitter cut-off current  
I
Collector-emitter saturation voltage  
DC current gain  
V
I
C
=200mA, I  
B
=10mA  
=10mA  
=−10mA, f=100MHz  
h
V
V
V
CE=2V, I  
CE=2V, I  
C
Transition frequency  
f
T
E
CB=10V, I  
E=0mA, f=1MHz  
Collector output capacitance  
Cob  
zElectrical characteristic curves  
Di1  
1
10m  
Ta=125°C  
75°C  
100m  
1m  
100µ  
10µ  
1µ  
C
°
10m  
5
2
5
1
C
7
=
5
a
2
25°C  
1m  
100µ  
25°C  
10µ  
1µ  
100n  
10n  
0
0.1  
0.2  
0.3  
0.4  
0.5  
(V)  
0.6  
0
10  
20  
30  
FORWARD VOLTAGE : V  
F
REVERSE VOLTAGE : V  
R
(V)  
Fig.1 Forward characteristics  
Fig.2 Reverse characteristics  
Rev.A  
2/3  
UML6N  
Transistors  
Tr2  
1000  
1000  
100  
10  
1000  
V
CE=2V  
V
CE=2V  
Ta=25°C  
Ta=125°C  
Pulsed  
Pulsed  
Pulsed  
Ta=25°C  
Ta=−40°C  
100  
10  
1
100  
10  
C
°
C
C
°
°
IC/IB=50  
40  
Ta=125  
Ta=25  
IC/IB=20  
Ta=  
IC/IB=10  
11  
10  
100  
1000  
1 1  
10  
100  
1000  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR CURRENT : I  
C
(mA)  
COLLECTOR CURRENT : IC (mA)  
Fig.4 DC current gain vs.  
collector current  
Fig.5 Collector-emitter saturation voltage  
Fig.3 Grounded emitter propagation  
characteristics  
vs. collector current ( Ι )  
1000  
10000  
1000  
100  
1000  
I
C
/I  
B
=20  
VCE=2V  
I
C B=20  
/I  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
Ta=−40°C  
Ta=25°C  
100  
10  
100  
10  
Ta=  
1
25°C  
Ta=125°C  
25°C  
40°C  
11  
10  
100  
1000  
10 1  
10  
100  
1000  
11  
10  
100  
1000  
EMITTER CURRENT : I  
E
(mA)  
COLLECTOR CURRENT : I  
C
(mA)  
COLLECTOR CURRENT : IC (mA)  
Fig.7 Base-emitter saturation voltage  
vs. collector current  
Fig.8 Gain bandwidth product  
vs. emitter current  
Fig.6 Collector-emitter saturation voltage  
vs. collector current ( ΙΙ )  
1000  
10  
I
f
E
=
0A  
Ta=25°C  
Single Pulsed  
=
1MHz  
Ta=25°C  
1
1ms  
10ms  
100  
100ms  
DC  
Cib  
0.1  
10  
1
Cob  
0.01  
0.1  
1
10  
100  
0.0001.01  
0.1  
1
10  
100  
EMITTER CURRENT : VCE (V)  
EMITTER TO BASE VOLTAGE : VEB V)  
(
Fig.9 Collector output capacitance  
vs. collector-base voltage  
Fig.10 Safe operation area  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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