US6U37 [ROHM]
2.5V Drive Nch+SBD MOSFET; 2.5V驱动N沟道+ SBD MOSFET
| 型号： | US6U37 |
| 厂家： | 
ROHM |
| 描述： | 2.5V Drive Nch+SBD MOSFET |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
TUMT6
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U37
zApplications
Switching
zInner circuit
(6)
(5)
(4)
zPackage specifications
Package
Taping
TR
∗2
Type
Code
Basic ordering unit (pieces)
3000
(1)Gate
(2)Source
(3)Cathode
(4)Anode
(5)Anode
(6)Drain
∗1
US6U37
(1)
(2)
(3)
∗1 ESD protection diode
∗2 Body diode
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Symbol
Limits
30
Unit
VDSS
VGSS
ID
V
V
Gate-source voltage
12
Continuous
Pulsed
1.5
6.0
0.6
6.0
150
A
Drain current
∗1
∗1
IDP
A
Source current
(Body diode)
Continuous
Pulsed
IS
A
ISP
A
Channel temperature
Power dissipation
Tch
PD
°C
∗2
0.7
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Symbol
VRM
VR
Limits
25
Unit
Repetitive peak reverse voltage
Reverse voltage
Forward current
V
20
0.7
10
V
IF
A
∗1
IFSM
Tj
Forward current surge peak
Junction temperature
A
°C
150
0.5
∗2
PD
Power dissipation
W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
1/4
US6U37
Transistors
<MOSFET and Di>
Parameter
Symbol
Limits
1.0
Unit
W / TOTAL
°C
∗1
Power dissipation
PD
Range of storage temperature
∗1 Mounted on a ceramic board
Tstg
−55 to +150
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 12V, VDS=0V
ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
DS= 10V, ID= 1mA
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 30
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
0.5
−
−
−
−
−
1
VGS (th)
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
V
V
170
180
240
−
80
14
12
7
mΩ ID= 1.5A, VGS= 4.5V
mΩ ID= 1.5A, VGS= 4V
mΩ ID= 1.5A, VGS= 2.5V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.5
S
V
V
V
DS= 10V, ID= 1.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
DS= 10V
Coss
Crss
td (on)
GS=0V
f=1MHz
∗
∗
∗
VDD 15V
I
V
D
= 0.75A
t
r
9
GS= 4.5V
Turn-off delay time
Fall time
td (off)
15
6
R
R
L
20Ω
=10Ω
∗
∗
tf
G
Total gate charge
Gate-source charge
Qg
1.6
0.5
0.3
nC VDD 15V, VGS= 4.5V
∗
∗
Qgs
Qgd
−
−
−
−
nC ID= 1.5A
Gate-drain charge
nC RL 10Ω, RG= 10Ω
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter Symbol Min. Typ. Max.
Forward voltage 1.2
Unit
V
Conditions
IS= 0.6A, VGS=0V
V
SD
−
−
<Di>
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
V
Forward voltage
Reverse current
V
F
−
−
−
−
0.49
200
I = 0.7A
F
I
R
µA VR= 20V
2/4
US6U37
Transistors
zElectrical characteristics curves
1000
1000
6
5
Ta=25°C
Ta=25°C
Ta=25°C
DD=15V
=1.5A
=10Ω
V
DD=15V
GS=4.5V
f=1MHz
V
V
V
GS=0V
I
D
R
G
=10Ω
R
G
Pulsed
Pulsed
tf
Ciss
Crss
100
4
3
2
100
10
1
td(off)
Coss
10
1
td(on)
tr
1
0
0.01
0.1
1
10
100
0.01
0.1
1
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
vs. Drain-Source Voltage
10
1
1.0
0.9
0.8
10
V
DS=10V
V
GS=0V
Ta=25°C
Pulsed
Pulsed
Pulsed
ID=1.5A
Ta=125°C
75°C
Ta=125°C
75°C
0.7
0.6
1
25°C
−25°C
25°C
−25°C
0.1
0.01
0.5
0.4
0.3
0.2
ID=0.75A
0.1
0.1
0.01
0.0
0.001
0
0
0.0
0.5
1.0
1.5
2.0
2.5
1
2
3
4
5
6
7
8
9
10
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
Fig.6 Source Current vs.
Source-Drain Voltage
On-State Resistance vs.
Gate source Voltage
10
10
10
V
GS=4.5V
V
GS=4.0V
V
GS=2.5V
Pulsed
Pulsed
Pulsed
Ta=125°C
75°C
1
1
1
Ta=125°C
75°C
Ta=125°C
75°C
25°C
−25°C
25°C
25°C
−25°C
−25°C
0.1
0.01
0.1
0.01
0.1
0.01
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
3/4
US6U37
Transistors
1
0.1
100000
Pulsed
Ta = 125
Ta = 75
Ta = 25
℃
℃
℃
pulsed
10000
1000
100
10
Ta = 125
℃
Ta = 75
Ta = 25
℃
℃
Ta= - 25
℃
0.01
0.001
Ta= - 25
℃
1
0.1
0.01
0
5
10
15
20
25
0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : VF(V)
REVERSE VOLTAGE : VR [V]
Fig.11 Forward Current vs. Forward Voltage
Fig.10 Reverse Current vs. Reverse
zMeasurement circuit
Pulse Width
V
GS
ID
V
DS
90%
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tf
t
on
t
off
Fig.13 Switching Time Waveforms
Fig.12 Switching Time Test Circuit
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.14 Gate Charge Measurement Circuit
Fig.15 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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