IRFS720 [SAMSUNG]
Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;![IRFS720](http://pdffile.icpdf.com/pdf2/p00285/img/icpdf/IRFS621_1700018_icpdf.jpg)
型号: | IRFS720 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 晶体管 |
文件: | 总1页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IRFS723
Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
SAMSUNG
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