IRFS720 [SAMSUNG]

Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRFS720
型号: IRFS720
厂家: SAMSUNG    SAMSUNG
描述:

Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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文件: 总1页 (文件大小:42K)
中文:  中文翻译
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