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K3N6U1000C-TE15 [SAMSUNG]

MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44;
K3N6U1000C-TE15
型号： K3N6U1000C-TE15
厂家： SAMSUNG    SAMSUNG
描述：

MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

有原始数据的样本ROM 光电二极管 内存集成电路
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K3N6V(U)1000C-TC(E)  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
3.3V Operation : 120ns(Max.)  
3.0V Operation : 150ns(Max.)  
· Supply voltage : single +3.0V/ single +3.3V  
· Current consumption  
Operating : 40mA(Max.)  
Standby : 30mA(Max.)  
GENERAL DESCRIPTION  
The K3N6V(U)1000C-TC(E) is a fully static mask programma-  
ble ROM fabricated using silicon gate CMOS process technol-  
ogy, and is organized either as 4,194,304x8 bit(byte mode) or  
as 2,097,152x16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it re quires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6V(U)1000C-TC(E) is packaged in a 44-TSOP2.  
· Package  
-. K3N6V(U)1000C-TC(E) : 44-TSOP2-400  
FUNCTIONAL BLOCK DIAGRAM  
PRODUCT INFORMATION  
Operating  
Temp Range  
Vcc Range Speed  
(Typical) (ns)  
Product  
A20  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
K3N6V(U)1000C-TC  
K3N6V(U)1000C-TE  
0°C~70°C  
(2,097,152x16/  
4,194,304x8)  
3.3V/3.0V 120/150  
-20°C~85°C  
DECODER  
Y
SENSE AMP.  
BUFFERS  
PIN CONFIGURATION  
BUFFERS  
AND  
DECODER  
A0  
N.C  
1
A20  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
A18  
2
3
A19  
A8  
A-1  
A17  
A7  
.
.
.
4
A9  
A6  
A5  
A4  
A3  
A10  
A11  
A12  
5
6
CE  
Q0/Q8  
Q7/Q15  
7
CONTROL  
LOGIC  
OE  
8
A13  
A14  
A15  
A2  
A1  
9
BHE  
10  
11  
12  
13  
14  
15  
16  
17  
18  
A16  
A0  
CE  
VSS  
OE  
Q0  
TSOP2  
BHE  
VSS  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
Data Outputs  
Q15/A-1  
Q7  
Q0 - Q14  
Q8  
29 Q14  
28 Q6  
Q1  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
Q9  
Q13  
Q5  
27  
26  
25  
24  
23  
Q2 19  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Output Enable  
Power  
Q10 20  
Q12  
Q4  
Q3  
21  
Q11  
22  
VCC  
OE  
VCC  
VSS  
N.C  
K3N6V(U)1000C-TC(E)  
Ground  
No Connection  
K3N6V(U)1000C-TC(E)  
CMOS MASK ROM  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
VIN  
Rating  
Unit  
Remark  
Voltage on Any Pin Relative to VSS  
Temperature Under Bias  
Storage Temperature  
-0.3 to +4.5  
-10 to +85  
-55 to +150  
0 to +70  
V
-
TBIAS  
TSTG  
°C  
°C  
°C  
°C  
-
-
K3N6V(U)1000C-TC  
K3N6V(U)1000C-TE  
Operating Temperature  
TA  
-20 to +85  
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the  
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may  
affect device reliability.  
RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS)  
Item  
Supply Voltage  
Symbol  
Min  
2.7/3.0  
0
Typ  
3.0/3.3  
0
Max  
3.3/3.6  
0
Unit  
V
VCC  
Supply Voltage  
VSS  
V
DC CHARACTERISTICS  
Parameter  
Symbol  
Test Conditions  
Min  
Max  
40  
Unit  
mA  
mA  
mA  
mA  
mA  
mA  
V
VCC=3.3V±0.3V  
VCC=3.0V±0.3V  
-
CE=OE=VIL,  
all outputs open  
Operating Current  
ICC  
-
35  
Standby Current(TTL)  
ISB1  
ISB2  
ILI  
CE=VIH, all outputs open  
CE=VCC, all outputs open  
VIN=0 to VCC  
-
-
500  
30  
Standby Current(CMOS)  
Input Leakage Current  
-
10  
Output Leakage Current  
Input High Voltage, All Inputs  
Input Low Voltage, All Inputs  
Output High Voltage Level  
Output Low Voltage Level  
ILO  
VOUT=0 to VCC  
-
10  
VIH  
VIL  
2.0  
-0.3  
2.4  
-
VCC+0.3  
0.6  
-
V
IOH=-400mA  
VOH  
VOL  
V
IOL=2.1mA  
0.4  
V
NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods<20ns.  
Maximum DC voltage on input pins(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods<20ns.  
MODE SELECTION  
CE  
OE  
BHE  
X
Q15/A-1  
Mode  
Data  
High-Z  
Power  
Standby  
Active  
H
X
X
X
Standby  
Operating  
Operating  
L
H
X
High-Z  
H
Output  
Q0~Q15 : Dout  
Active  
L
L
Q0~Q7 : Dout  
Q8~Q14 : High-Z  
L
Input  
Operating  
Active  
CAPACITANCE(TA=25°C, f=1.0MHz)  
Item  
Output Capacitance  
Input Capacitance  
Symbol  
Test Conditions  
VOUT=0V  
Min  
Max  
12  
Unit  
pF  
COUT  
CIN  
-
-
VIN=0V  
12  
pF  
NOTE : Capacitance is periodically sampled and not 100% tested.  
K3N6V(U)1000C-TC(E)  
CMOS MASK ROM  
AC CHARACTERISTICS(VCC=3.3V/3.0V±0.3V unless otherwise noted.)  
TEST CONDITIONS  
Item  
Value  
0.45V to 2.4V  
Input Pulse Levels  
Input Rise and Fall Times  
Input and Output timing Levels  
Output Loads  
10ns  
1.5V  
1 TTL Gate and CL=100pF  
READ CYCLE  
Item  
VCC=3.3V±0.3V  
VCC=3.0V±0.3V  
Symbol  
Unit  
Min  
120  
Max  
Min  
150  
Max  
Read Cycle Time  
tRC  
tACE  
tAA  
ns  
ns  
ns  
ns  
Chip Enable Access Time  
Address Access Time  
Output Enable Access Time  
120  
120  
60  
150  
150  
70  
tOE  
Output or Chip Disable to  
Output High-Z  
tDF  
20  
30  
ns  
ns  
Output Hold from Address Change  
tOH  
0
0
TIMING DIAGRAM  
READ  
ADD  
A0~A20  
A-1(*1)  
ADD2  
ADD1  
tRC  
tDF(*3)  
tACE  
CE  
OE  
tOE  
tAA  
tOH  
DOUT  
D0~D7  
VALID DATA  
VALID DATA  
D8~D15(*2)  
NOTES :  
*1. Byte Mode only. A-1 is Least Significant Bit Address.(BHE=VIL)  
*2. Word Mode only.(BHE=VIH)  
*3. tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or VOL level.  
K3N6V(U)1000C-TC(E)  
CMOS MASK ROM  
PACKAGE DIMENSIONS  
(Unit : mm/inch)  
44-TSOP2-400  
0~8°  
0.25  
0.010  
(
)
#44  
#23  
0.45 ~0.75  
0.018 ~ 0.030  
11.76±0.20  
0.463±0.008  
0.50  
)
(
0.020  
#1  
#22  
0.15 + 0.10  
1.00±0.10  
0.039±0.004  
1.20  
- 0.05  
+ 0.004  
0.006  
18.81  
0.741  
- 0.002  
MAX.  
MAX.  
0.047  
18.41±0.10  
0.725±0.004  
0.10  
0.004  
MAX  
0.80  
0.0315  
0.805  
0.032  
0.35±0.10  
0.014±0.004  
(
)

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