K4E641612C-TL450 [SAMSUNG]

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50;
K4E641612C-TL450
型号: K4E641612C-TL450
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

动态存储器 光电二极管 内存集成电路
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K4E641612C-TL50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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26 SAMSUNG

K4E641612C-TL50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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23 SAMSUNG

K4E641612C-TL50TH

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612C-TL60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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36 SAMSUNG

K4E641612C-TL60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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10 SAMSUNG

K4E641612C-TL600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E641612C-TL60M0

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612C-TL60R0

暂无描述

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0 SAMSUNG

K4E641612C-TL60TN

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612C-TL60TN

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50

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0 SAMSUNG

K4E641612D

CMOS DRAM

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20 SAMSUNG

K4E641612D

CMOS DRAM

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32 SAMSUNG

K4E641612D-TC60

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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2 SAMSUNG

K4E641612E-TI450

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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0 SAMSUNG

K4E641612E-TI450

EDO DRAM, 4MX16, 45ns, CMOS, PDSO50,

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0 SAMSUNG