K5L5628JBM-DH180 [SAMSUNG]

Memory Circuit, 16MX16, CMOS, PBGA115, 8 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-115;
K5L5628JBM-DH180
型号: K5L5628JBM-DH180
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Memory Circuit, 16MX16, CMOS, PBGA115, 8 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-115

内存集成电路
文件: 总98页 (文件大小:1567K)
下载:  下载PDF数据表文档文件

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256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

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270 SEMIKRON

K5-N

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28 SAMSUNG

K5P2880YCM

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94 SAMSUNG

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0 SAMSUNG

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Memory Circuit, Flash+SRAM, CMOS, PBGA69

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K5P5781FCM-F0550

Memory Circuit, 16MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, FBGA-69

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0 SAMSUNG

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0 SAMSUNG

K5Q6432YCM-T010

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0 SAMSUNG

K5-R2

Adjustable Type Coils

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70 MITSUMI

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Adjustable Type Coils

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37 MITSUMI

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24 MITSUMI