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K7P321866M-GC30T [SAMSUNG]

SRAM;

K7P321866M-GC30T


型号：	K7P321866M-GC30T
厂家：	SAMSUNG
描述：	SRAM 静态存储器
文件：	总14页 (文件大小：446K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

K7P321866M-HC250

Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P321866M-HC25T

SRAM

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SAMSUNG

K7P321866M-HC300

Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P321866M-HC30T

SRAM

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SAMSUNG

K7P321874C

1Mx36 & 2Mx18 SRAM

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SAMSUNG

K7P321874C-GC250

Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

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SAMSUNG

K7P321874C-GC300

Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

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-

SAMSUNG

K7P321874C-HC250

Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P321874C-HC300

Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P321888M-GC25

SRAM

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SAMSUNG

K7P321888M-GC250

Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

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SAMSUNG

K7P321888M-GC30

SRAM

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SAMSUNG

K7P321888M-GC300

Late-Write SRAM, 2MX18, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

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SAMSUNG

K7P321888M-HC25

SRAM

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SAMSUNG

K7P321888M-HC250

Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P321888M-HC30

SRAM

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SAMSUNG

K7P321888M-HC300

Late-Write SRAM, 2MX18, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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SAMSUNG

K7P323666M

1Mx36 & 2Mx18 SRAM

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-

SAMSUNG

K7P323666M-GC250

Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119

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SAMSUNG

K7P323666M-GC25T

SRAM

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SAMSUNG

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