KM41V4000CT-8 [SAMSUNG]

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20;
KM41V4000CT-8
型号: KM41V4000CT-8
厂家: SAMSUNG    SAMSUNG
描述:

Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20

动态存储器 光电二极管
文件: 总1页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

KM41V4000CT-L6

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
SAMSUNG

KM41V4000D

4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
SAMSUNG

KM41V4000DJ-6

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
SAMSUNG

KM41V4000DJ-L6

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
SAMSUNG

KM41V4000DJ-L7

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
SAMSUNG

KM41V4000DT-6

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
SAMSUNG

KM41V4000DT-7

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
SAMSUNG

KM41V4000DT-L6

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
SAMSUNG

KM41V4000DT-L7

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
SAMSUNG

KM4200

Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier
FAIRCHILD

KM4200IC8

Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier
FAIRCHILD

KM4200IC8TR3

Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier
FAIRCHILD