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元器件品牌
IRFP251
[SAMSUNG]
N-Channel Power Mosfets; N沟道功率MOSFET
元器件型号:
IRFP251
生产厂家:
SAMSUNG SEMICONDUCTOR
描述和应用:
N-Channel Power Mosfets
N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管
PDF文件:
总7页 (文件大小:522K)
下载文档:
下载PDF数据表文档文件
型号参数:IRFP251参数
查看货源
IRFP251R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
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ETC
IRFP252
N-Channel(Hexfet Transistors)
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51
IRF
IRFP252
N-Channel Power Mosfets
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SAMSUNG
IRFP252
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
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IXYS
IRFP252
Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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0
SAMSUNG
IRFP252R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247
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21
ETC
IRFP253
N-Channel(Hexfet Transistors)
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56
IRF
IRFP253
N-Channel Power Mosfets
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28
SAMSUNG
IRFP253
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
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22
IXYS
IRFP253
Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Warning
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0
SAMSUNG
IRFP253R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247
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14
ETC
IRFP254
Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
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IRF
IRFP254
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
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59
IXYS
IRFP254
Standard Power MOSFET - N-Channel Enhancement Mode
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322
IXYS
IRFP254
Power MOSFET
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98
VISHAY
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