SLA5023 [SANKEN]
PNP Darlington + N-channel MOSFET 3-phase motor drive; PNP达林顿+ N沟道MOSFET的三相电动机驱动
| 型号： | SLA5023 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | PNP Darlington + N-channel MOSFET 3-phase motor drive |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Darlington + N-channel MOSFET
• • •
SLA5023 3-phase motor drive
External dimensions
SLA
A
Electrical characteristics (Sink: N-channel MOSFET)
Absolute maximum ratings
(Ta=25°C)
(Ta=25°C)
Specification
Symbol
Ratings
Unit
Symbol
Unit
Conditions
min
typ
max
VM
IO
100
V
A
A
V
A
V(BR)DSS
IGSS
100
V
nA
µA
V
ID=250µA, VGS=0V
VGS=±10V
±6 (PW≤100ms)
±500
250
2.0
IOP
VGSS
IB
±8 (PW≤1ms)
IDSS
VDS=100V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=4A
VGS=10V, ID=2A
VGS=4V, ID=2A
VDS=25V, f=1.0MHz,
VGS=0V
±10
VTH
1.0
1.1
–0.5
Re(yfs)
1.7
0.47
0.60
230
60
S
5 (Ta=25°C)
0.55
0.78
RDS(ON)
Ω
PT
W
35 (Tc=25°C)
θ j-a
θ j-c
VISO
Tj
25
°C/W
°C/W
Vrms
°C
Ciss
Coss
ton
pF
pF
ns
ns
V
3.57
1000 (Between fin and lead pin, AC)
150
60
ID=4A, VDD=50V,
VGS=10V
toff
50
Tstg
–40 to +150
°C
VSD
trr
1.2
250
2.0
ISD=4A, VGS=0V
IF=±100mA
ns
■Equivalent circuit diagram
1
VM
R1
R2
2
8
9
3
OUT1
7
OUT2
10
OUT3
4
6
11
5
12
R1: 3kΩ typ R2: 80Ω typ
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical)
VGS-ID Temperature Characteristics (Typical)
IDS-RDS(ON) Characteristics (Typical)
8
0.8
8
VDS=10V
10V
7
7
6
V
GS=4V
6
5
0.6
0.4
0.2
0
4.5V
5
VGS=10V
4V
4
3
25°C
4
3
2
1
0
3.5V
2
1
0
V
GS=3V
0
1
2
3
4
5
6
7
8
0
2
4
GS (V)
6
8
0
2
4
6
8
10
V
I
D (A)
VDS (V)
ID-Re(yfs) Temperature Characteristics (Typical)
TC-RDS(ON) Characteristics (Typical)
VDS-Cpacitance Characteristics (Typical)
VGS=0V
(I
D=2A)
f=1MHz
700
500
7
1.2
1.0
0.8
0.6
0.4
V
DS=10V
5
Ciss
C
°
100
50
=40
C
TC
°
Coss
125
1
25°C
Crss
40
0.2
0
10
5
0.5
0.3
0
10
20
30
DS (V)
50
150
–40
0
50
C
100
0.05 0.1
0.5
I
1
5
8
V
T
(°C)
VSD-IDR CharactDeristics (Typical)
Safe Operating Area (SOA)
θ ch-c-PW Characteristics
(A)
(Tc=25°C)
8
7
10
5
20
10
100
ID (pulse) max
µ
s
1ms
10
ms (1shot)
6
5
5
LIMITED
1
4
3
0.5
1
2
4V
0.5
1
0
0.1
0.2
0.1
0.5
1
5
10
DS (V)
50
100
0
0.5
1.0
1.5
0.5
1
5
10
50100
5001000 500010000
VSD (V)
V
PW (mS)
62
SLA5023
Electrical characteristics (Source: PNP transistor)
(Ta=25°C)
Specification
Symbol
Unit
Conditions
min
typ
max
–10
–10
ICBO
IEBO
VCEO
hFE
µA
mA
V
VCB=–100V
VEB=–6V
–100
2000
IC=–10mA
5000
12000
–1.5
–2.2
1.3
VCE=–4V, IC=–3A
VCE(sat)
VBE(sat)
VFEC
trr
V
V
IC=–3A, IB=–6mA
V
IFEC=–1A
IF=±100mA
2.0
0.6
1.6
0.5
90
µs
µs
µs
µs
MHz
pF
ton
VCC –30V
tstg
IC=–3A
tf
IB1=–IB2=–6mA
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
fT
Cob
100
Characteristic curves (PNP)
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
hFE-IC Temperature Characteristics (Typical)
(VCE=–4V)
(VCE=–4V)
20000
20000
–8
IB=–4mA
10000
10000
5000
–7
–6
–5
–4
–3
–2
typ
5000
–1.2mA
–0.8mA
–0.6mA
1000
500
1000
500
–0.4mA
100
100
–1
0
50
30
50
30
–0.03 –0.05 –0.1
–0.5
–1
–5
–8
–0.03
–0.05 –0.1
–0.5 –1
IC (A)
–5 –8
0
–1
–2
–3
CE (V)
–4
–5
I
C (A)
V
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000)
(VCE=–4V)
–8
–3
–3
–6
–4
–2
–2
IC=–5A
IC=–3A
T
a=–30°C
–1
25°C
–1
IC=–1A
75°C
–2
0
125°C
0
0
–0.3
–0.5
–1
–5
–10
–0.2 –0.5 –1
–5 –10
–50 –100
–500
0
–1
–2
BE (V)
–3
I
C (A)
I
B (mA)
V
θ j-a-PW Characteristics
Safe Operating Area (SOA)
PT-Ta Characteristics
–10
–5
40
35
20
10
5
100
With Silicone Grease
Natural Cooling
All Circuits Operating
µ
s
1ms
30
25
20
15
10
–1
–0.5
–0.1
1
Without Heatsink
Single Pulse
Without Heatsink
Ta=25°C
5
0
–0.05
–0.03
0.5
1
–3
–5
–10
–50
–100
0
50
100
150
5
10
50 100
500 1000
VCE (V)
Ta (°C)
PW (mS)
63
相关型号：
©2020 ICPDF网 联系我们和版权申明