2SK3557_12 [SANYO]
High-Frequency Low-Noise Amplifi er Applications; 高频低噪声功率放大器呃应用
| 型号： | 2SK3557_12 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | High-Frequency Low-Noise Amplifi er Applications |
| 文件： | 总6页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7169A
SANYO Sem iconductors
DATA S HEET
N-Channel Junctin Silicon FET
High-Frequency Low-Noise
Amplifier Applications
2SK3557
Applications
•
AM tuner RF amplification
•
Low noise amplifier
Features
•
Large yfs
|
|
•
•
•
Small Ciss
Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer
Ultralow noise figure
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
15
--15
10
DSX
V
V
GDS
I
mA
mA
mW
°C
G
Drain Current
I
50
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
200
150
D
Tj
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CP
7013A-011
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
•
Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.1
2SK3557-6-TB-E
2SK3557-7-TB-E
3
Packing Type: TL
Marking
IR
TB
1
2
0.95
0.4
1 : Source
2 : Drain
3 : Gate
Electrical Connection
3
SANYO : CP
1
2
http://semicon.sanyo.com/en/network
No.7169-1/6
62012 TKIM/60502 TSIM TA-3622
2SK3557
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
=--10 A, V =0V
Unit
min
--15
max
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
V
I
V
nA
V
μ
(BR)GDS
G
DS
I
V
=--10V, V =0V
--1.0
GSS
(off)
GS
DS
=5V, I =100
V
V
A
μ
--0.3
10*
24
--0.7
--1.5
32*
GS
DS
D
Drain Current
I
V
=5V, V =0V
DS GS
mA
mS
pF
pF
dB
DSS
yfs
Forward Transfer Admittance
Input Capacitance
V
=5V, V =0V, f=1kHz
GS
35
10.0
2.9
|
|
DS
Ciss
Crss
NF
V
=5V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
Noise Figure
V
=5V, V =0V, f=1MHz
GS
DS
V
=5V, R =1k , I =1mA, f=1kHz
1.0
Ω
DS
g
D
: The 2SK3557 is classified by I
as follows : (unit : mA)
*
DSS
Rank
6
7
I
10.0 to 20.0
16.0 to 32.0
DSS
Ordering Information
Device
2SK3557-6-TB-E
2SK3557-7-TB-E
Package
CP
Shipping
memo
3,000pcs./reel
3,000pcs./reel
Pb Free
CP
I
D
-- V
DS
I -- V
D DS
20
16
12
8
20
16
12
8
4
0
4
0
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2
4
6
8
10
12
ITR02750
Drain-to-Source Voltage, V
DS
-- V ITR02749
Drain-to-Source Voltage, V -- V
DS
I
D
-- V
I -- V
D GS
GS
22
20
18
16
14
12
10
8
16
V
=5V
=15mA
V
=5V
DS
DS
I
DSS
14
12
10
8
6
6
4
2
0
4
2
0
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
IT04224
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0.2
Gate-to-Source Voltage, V
GS
-- V
ITR02752
Gate-to-Source Voltage, V
GS
-- V
No.7169-2/6
2SK3557
| yfs | -- I
| yfs | -- I
D
D
7
100
V
V
=5V
=0
V
=5V
DS
GS
DS
5 f=1kHz
7
f=1kHz
3
2
5
3
2
10
7
5
3
2
10
3
7
7
5
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
10
Drain Current, I -- mA
Drain Current, I
DSS
-- mA
IT04225
IT04226
D
V
(off) -- I
Ciss -- V
GS
DSS
DS
3
2
3
2
V
=5V
V
=0
DS
GS
I =100μA
f=1MHz
D
10
1.0
7
5
7
5
3
3
2
3
5
7
2
3
5
7
2
3
10
1.0
10
Drain Current, I
DSS
-- mA
IT04227
IT04228
Drain-to-Source Voltage, V
-- V
DS
NF -- f
Crss -- V
DS
10
10
8
V
=0
V
=5V
DS
DS
f=1MHz
I =1mA
D
7
5
Rg=1kΩ
6
3
2
4
1.0
2
0
7
5
2
3
5
7
2
3
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
1.0
10
0.01
0.1
1.0
10
IT04229
ITR02758
Drain-to-Source Voltage, V
-- V
Frequency, f -- kHz
DS
NF -- Rg
P
D
-- Ta
10
8
240
V
=5V
I =1mA
DS
D
f=1kHz
200
160
120
80
6
4
2
0
40
0
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
1000
0
20
40
60
80
100
120
140
160
0.1
1.0
10
100
ITR02759
ITR02760
Ambient Temperature, Ta -- °C
Signal Source Resistance, Rg -- kΩ
No.7169-3/6
2SK3557
Embossed Taping Specification
2SK3557-6-TB-E, 2SK3557-7-TB-E
No.7169-4/6
2SK3557
Outline Drawing
Land Pattern Example
2SK3557-6-TB-E, 2SK3557-7-TB-E
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.8
0.95
0.95
No.7169-5/6
2SK3557
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No.7169-6/6
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