ATP214 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | ATP214 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1712
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP214
Features
•
•
ON-resistance R (on)1=6.2m (typ.)
4V drive
Input Capacitance Ciss=4850pF(typ.)
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
DSS
V
±20
V
GSS
I
75
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
225
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
60
W
°
D
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
94
38
mJ
A
AS
I
AV
Note : 1 V =15V, L=100 H, I =38A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
4
ATP214
LOT No.
TL
Electrical Connection
2
2,4
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
3 : Source
4 : Drain
1
SANYO : ATPAK
3
http://semicon.sanyo.com/en/network
No. A1712-1/4
70710PA TK IM TC-00002343
ATP214
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(off)
GS
=10V, I =1mA
1.2
D
Forward Transfer Admittance
| yfs |
=10V, I =38A
100
6.2
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=38A, V =10V
GS
8.1
11.5
14
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=19A, V =4.5V
GS
8.2
=10A, V =4V
GS
9.2
Input Capacitance
Ciss
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
4850
370
280
30
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
DS
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
d
r
240
360
250
96
ns
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
V
=30V, V =10V, I =75A
GS
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =75A
GS
18.5
18
DS
D
V
=30V, V =10V, I =75A
GS
DS
D
V
SD
I =75A, V =0V
0.93
1.2
S
GS
Switching Time Test Circuit
V
IN
V =30V
DD
10V
0V
I
=38A
D
V
IN
R =0.79Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP214
P. G
50Ω
S
I
-- V
I -- V
D GS
D
DS
75
70
65
60
55
50
45
40
35
30
25
20
15
10
100
90
80
70
60
50
40
30
20
Tc=25°C
V
=10V
DS
=2.5V
V
GS
10
0
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain-to-Source Voltage, V
-- V
IT15694
Gate-to-Source Voltage, V
GS
-- V
IT15695
DS
No. A1712-2/4
ATP214
R
(on) -- V
GS
R
(on) -- Tc
DS
DS
20
18
16
14
12
10
8
20
18
16
14
12
10
8
Tc=25°C
Single pulse
Single pulse
I
=10A
D
19A
38A
6
6
4
4
2
2
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT15697
IT15696
GS
| yfs | -- I
I
-- V
D
S SD
3
2
3
2
V
=0V
GS
Single pulse
V
=10V
DS
100
Single pulse
7
5
100
7
3
2
10
5
7
5
3
2
3
2
1.0
7
5
10
7
3
2
0.1
5
7
5
3
2
3
2
0.01
7
5
1.0
3
2
7
5
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT15699
1.0
10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15698
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
1000
V
V
=30V
=10V
f=1MHz
DD
GS
7
7
5
5
3
2
3
2
1000
100
7
5
7
5
3
2
3
2
100
7
10
0.1
0
10
20
30
40
50
60
IT15701
2
3
5
7
2
3
5
7
2
3
5
7
2
1.0
10
100
IT15700
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
A S O
V
GS
-- Qg
5
10
9
V
I
=30V
DS
=75A
I
I
=225A (PW≤10μs)
3
2
DP
D
=75A
100
7
5
8
D
7
3
2
6
10
7
5
5
Operation in
this area is
limited by R (on).
3
2
4
DS
3
1.0
7
5
2
3
2
1
0
Tc=25°C
Single pulse
0.1
0.1
0
10
20
30
40
50
60
70
80
90
100
2
3
5
7
2
3
5
7
2
3
5 7
100
IT15514
1.0
10
Total Gate Charge, Qg -- nC
IT15711
Drain-to-Source Voltage, V -- V
DS
No. A1712-3/4
ATP214
P
-- Tc
E
-- Ta
D
AS
70
60
50
40
30
20
120
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT15179
IT15513
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
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applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
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mentioned above.
This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1712-4/4
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