CPH5608 [SANYO]
Ultrahigh-Speed Switching Applications; 超高速开关应用
| 型号： | CPH5608 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Ultrahigh-Speed Switching Applications |
| 文件： | 总4页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN6442A
N-Channel Silicon MOSFET
CPH5608
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit:mm
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
2168
[CPH5608]
· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
2.9
0.15
5
4
3
2
0.05
1
0.95
0.4
0.4
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
100
V
V
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
±10
GSS
I
0.4
1.6
A
D
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm2×0.8mm) 1unit
A
DP
P
D
Tch
0.9
W
˚C
150
˚C
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=100V, V =0
10
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
=10V, I =1mA
D
±10
1.5
GSS
V
0.5
GS(off)
| yfs |
Forward Transfer Admittance
=10V, I =200mA
D
520
750
mS
Ω
R
1
=200mA, V =4V
GS
2.5
2.7
50
15
4
3.3
3.8
DS(on)
D
Static Drain-to-Source On-State Resistance
Ω
R
2
I
=100mA, V =2.5V
D GS
DS(on)
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FH
V
V
V
=20V, f=1MHz
pF
pF
pF
DS
Coss
Crss
=20V, f=1MHz
DS
=20V, f=1MHz
DS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2881 No.6442-1/4
CPH5608
Continued from preceding page.
Ratings
typ
15
10
20
20
5
Parameter
Symbol
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
ns
ns
ns
ns
nC
nC
nC
V
d(on)
t
r
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
Qg
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
V
V
V
=10V, V =10V, I =400mA
GS
DS
DS
DS
D
Qgs
Qgd
=10V, V =10V, I =400mA
GS
1
D
=10V, V =10V, I =400mA
GS
2
D
V
I =400mA, V =0
GS
1.0
1.2
SD
S
Electrical Connection
Switching Time Test Circuit
V
=50V
DD
G1
S
G2
V
IN
I
=200mA
D
4V
0V
R =250Ω
L
V
OUT
V
IN
D
PW=10µs
D.C.≤1%
D2
(Top view)
D1
G
CPH5608
P.G
50Ω
S
I
-- V
DS
I
-- V
D
D
GS
0.40
0.35
0.30
0.40
V =10V
DS
0.35
0.30
0.25
0.20
0.15
0.10
0.25
0.20
0.15
0.10
V =1.5V
GS
0.05
0
0.05
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 2.0
Gate-to-Source Voltage, V
– V
Drain-to-Source Voltage, V
– V
IT01043
IT01044
GS
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
5.0
4.5
5
4
Ta=25°C
4.0
3.5
3.0
2.5
2.0
I =0.1A
D
0.2A
3
2
1.5
1.0
0.5
0
1
--60 --40 --20
0
20
40
60
80 100 120 140 160
0
1
2
3
4
5
6
7
8
9
10
Gate-to-Source Voltage, V
GS
– V
IT01045
Ambient Temperature, Ta – °C
IT01046
No.6442-2/4
CPH5608
yfs -- I
I
-- V
D
F
SD
10
1.0
7
5
V
=10V
V
=0
DS
GS
7
5
3
2
3
2
0.1
7
5
1.0
3
2
7
5
0.01
7
5
3
2
3
2
0.1
0.01
0.001
2
3
5
7
2
3
5
7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
Drain Current, I – A
IT01047
Diode Forward Voltage, V
– V
SD
IT01048
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
1000
f=1MHz
V
=50V
=4V
7
5
DD
7
5
V
GS
3
2
3
2
100
100
7
5
7
5
Ciss
3
2
3
2
t (on)
d
t
r
10
10
7
5
7
5
3
2
3
2
1.0
0.01
1.0
20
25
30
2
3
5
7
2
3
5
7
0
5
10
15
0.1
1.0
Drain-to-Source Voltage, V
– V
IT01050
Drain Current, I – A
IT01049
DS
D
V
-- Qg
A S O
GS
5
10
V
=10V
DS
3
2
I
=1.6A
9
8
7
6
5
4
3
2
DP
I =0.4A
D
100µs
1.0
7
5
I =0.4A
D
3
2
0.1
7
5
3
2
Operation in this
area is limited by R (on).
DS
0.01
7
5
Ta=25°C
Single pulse
1unit
3
2
1
0
Mounted on a ceramic board (600mm2×0.8mm)
0.001
0.1
0
1
2
3
4
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
100
Total Gate Charge, Qg – nC
IT01051
IT01052
Drain-to-Source Voltage, V
– V
DS
P
-- Ta
D
1.0
0.9
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
IT01053
No.6442-3/4
CPH5608
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.6442-4/4
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