CPH6701 [SANYO]
DC/DC Converter Applications; DC / DC转换器应用
| 型号： | CPH6701 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | DC/DC Converter Applications |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN6007A
PNP Epitaxial Planar Silicon Transistor
Schottky Barrier Diode
CPH6701
DC/DC Converter Applications
Features
Package Dimensions
unit:mm
· Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
2153
[CPH6701]
· The CPH6701 is formed with two chips, one being
equivalent to the CPH3106 and the other the
SBS001, encapsulated in one package.
· Ultrasmall package facilitates miniaturization in end
products (mounting height : 0.9mm).
0.15
2.9
5
6
1
4
0.05
2
3
0.95
1 : Emitter
2 : Base
3 : Anode
4 : Common (Collector, Cathode)
5 : Common (Collector, Cathode)
6 : Common (Collector, Cathode)
SANYO : CPH6
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
–15
–12
–5
V
V
CBO
V
CEO
V
V
EBO
I
–3
A
C
Collector Current (Pulse)
Base Current
I
–5
A
CP
I
–600
1.3
mA
W
˚C
˚C
B
Mounted on a ceramic board (600mm2×0.8mm)
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
P
C
Tj
150
Tstg
–55 to +125
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
V
11
V
V
RRM
V
15
500
RSM
I
mA
A
O
I
50Hz sine wave, 1 cycle
5
FSM
˚C
˚C
Junction Temperature
Storage Temperature
Tj
–55 to +125
–55 to +125
Tstg
Marking : PA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2852/61899TS (KOTO) TA-1524 No.6007–1/5
CPH6701
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[TR]
Collector Cutoff Current
Emitter Cutoff Current
I
V
V
V
V
V
V
I
=–12V, I =0
E
–0.1
µA
µA
CBO
CB
EB
CE
CE
CE
CB
I
=–4V, I =0
–0.1
560
EBO
C
h
h
1
=–2V, I =–0.5A
C
=–2V, I =–3A
C
=–2V, I =–0.5A
C
=–10V, f=1MHz
200
FE
FE
DC Current Gain
2
70
Gain-Bandwidth Product
Output Capacitance
f
280
36
MHz
pF
mV
V
T
Cob
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
=–1.5A, I =–30mA
B
–110
–0.85
–165
–1.2
CE(sat)
BE(sat)
C
I
I
I
I
=–1.5A, I =–30mA
B
=–10µA, I =0
E
C
C
C
C
V
V
V
–15
–12
–5
V
(BR)CBO
(BR)CEO
(BR)EBO
=–1mA, R =∞
V
BE
=–10µA, I =0
C
V
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
30
90
10
ns
ns
ns
on
Storage Time
t
stg
Turn-OFF Time
t
f
[Di]
Reverse Voltage
V
R
V
F
I
=400µA
11
V
V
R
Forward Voltage
I =500mA
0.4
50
96
0.45
200
F
Reverse Current
I
V
=6V
µA
pF
R
R
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V
=10V, f=1MHz
t
I =I =100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2×0.8mm)
10
ns
rr
F R
Rthj-a
˚C/W
Electrical Connection
6
5
4
3
1
2
A11501
Switching Time Test Circuit
(TR)
(Di)
I 1
B
PW=20µs
D.C.≤1%
Duty≤10%
10µs
I 2
B
OUTPUT
INPUT
10mA
R
B
R
L
V
R
50Ω
100Ω
10Ω
50Ω
220µF
470µF
t
rr
V
=5V
V
=–5V
CC
–5V
BE
–20I 1=20I 2=I =–1.5A
A11503
B
B
C
A11502
No.6007–2/5
CPH6701
I
-
V
CE
I
- V
CE
[TR]
[TR]
C
C
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-200
-180
-160
-140
-120
-100
-80
–12mA
–10mA
–8mA
–6mA
–4mA
-60
–2mA
-40
-20
0
-0.2
0
=
I
B
0
-1.0
I =0
B
0
-0.2
-0.4
-0.6
-0.8
0
-1
-2
-3
-4
-5
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
– V
I
-
V
BE
h
FE
- I
[TR]
[TR]
=–2V
C
C
-5 V =–2V
CE
V
CE
1000
7
5
-4
-3
-2
-1
0
3
2
–25
°C
100
7
5
3
2
10
-0.01
0
0.2
0.4
0.6
0.8
1.0
2
3
5
7
2
3
5
7
2
3
5 7
-10
-0.1
-1.0
Base-to-Emitter Voltage, V
BE
– V
Collector Current, I – A
C
V
CE
(
)
-
I
V
BE
(
)
-
I
C
sat
sat
[TR]
/ I =50
[TR]
I / I =50
C
C
-1000
7
5
-10
I
C
B
B
7
5
3
2
3
2
-100
7
5
-1.0
7
3
2
5
-10
7
3
2
5
3
2
-1.0
-0.01
-0.1
-0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
-10
-0.1
-1.0
-10
-0.1
-1.0
Collector Current, I – A
Collector Current, I – A
C
C
V
CE
(
)
-
I
f
- I
T C
sat
[TR]
/ I =20
[TR]
=–2V
C
-1000
7
5
1000
I
V
CE
C
B
7
5
3
2
3
2
-100
7
5
100
7
3
2
5
3
2
-10
7
5
3
2
10
7
-1.0
-0.01
5
2
3
5
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
3
5
-0.1
-1.0
-10
-0.01
-0.1
-1.0
Collector Current, I – A
Collector Current, I – A
C
C
No.6007–3/5
CPH6701
Cob
- V
CB
A S O
[TR]
f=1MHz
[TR]
1000
7
5
-10
7
5
I
CP
I
C
3
2
3
2
100
7
5
-1.0
7
5
3
2
3
2
10
7
5
-0.1
7
Ta=25°C
5
3
2
Single pulse
3
2
Mounted on a ceramic board(600mm2×0.8mm)
1.0
-0.1
2
3
5
7
2
3
5
7
2
3
5
2
0
3
3
5
7
2
3
5
7
2
-1.0
-10
-1.0
-10
Collector-to-Base Voltage, V
CB
– V
Collector-to-Emitter Voltage, V – V
CE
P
-
Ta
I
-
V
F
[SBD]
[TR]
C
F
1.6
7
5
1.4
1.3
3
2
1.2
1.0
0.8
0.6
0.4
0.1
7
5
3
2
0.01
7
5
0.2
0
3
2
0
20
40
60
80
100
120
140
160
0.1
0.2
0.3
0.4
0.5
0.6
Ambient Temperature, Ta – °C
Forward Voltage, I – V
F
C
- V
R
I
-
V
[SBD]
[SBD]
R
R
5
3
2
f=1MHz
3
2
1.0
7
5
3
2
0.1
7
5
100
7
3
2
5
0.01
7
5
3
2
3
2
0.001
7
10
0
2
4
6
8
10
12
14
5
7
2
3
5
7
2
1.0
10
Reverse Voltage, V – V
Reverse Voltage, V – V
R
R
I
- t
[SBD]
S
14
12
10
8
Current waveform 50Hz sine wave
1s
20ms
t
6
4
2
0
7
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Time, t – s
No.6007–4/5
CPH6701
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.
PS No.6007–5/5
相关型号：
CPH6901
N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifier, Differential Amplifier, Analog Switch Applications
SANYO
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