MCH5834 [SANYO]
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications; MOSFET ： N沟道MOSFET硅SBD ：肖特基二极管通用开关器件应用
| 型号： | MCH5834 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0558
SANYO Sem iconductors
DATA S HEET
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
MCH5834
General-Purpose Switching Device
Applications
Features
•
Composite type with an N-channel silicon MOSFET (MCH3435) and a schottky barrier diode (SS0503SH)
contained in one package facilitating high-density mounting.
[MOSFET]
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
1.5V drive.
[SBD]
•
Short reverse recovery time.
•
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
V
V
30
10
V
V
DSS
GSS
I
0.7
2.8
0.6
150
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
A
DP
P
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
W
°C
°C
D
Tch
Tstg
--55 to +125
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
V
30
V
V
RRM
V
30
0.5
RSM
I
O
A
I
50Hz sine wave, 1 cycle
5
A
FSM
Tj
--55 to +125
--55 to +125
°C
°C
Tstg
Marking : XY
(*1) : Note, when designing a circuit using this it has a gate (oxide film) protection diode connected only between its gate and source.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806PE SY IM TC-00000259 No. A0558-1/6
MCH5834
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0V
GS
1
1
DSS
GSS
DS
GS
DS
DS
I
=8V, V =0V
DS
V
(off)
GS
=10V, I =100µA
0.4
1.3
D
Forward Transfer Admittance
yfs
=10V, I =350mA
0.45
0.8
0.7
0.8
1.6
30
7
S
D
R
R
R
(on)1
I
D
I
D
I
D
=350mA, V =4V
GS
0.9
1.15
2.4
Ω
DS
DS
DS
Static Drain-to-Source On-State Resistance
(on)2
(on)3
=200mA, V =2.5V
GS
Ω
=10mA, V =1.5V
GS
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Coss
Crss
3.5
8
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
6
Turn-OFF Delay Time
Fall Time
t (off)
d
10
8
t
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =700mA
GS
1
DS
DS
DS
D
=10V, V =4V, I =700mA
GS
0.4
0.2
0.93
D
=10V, V =4V, I =700mA
GS
D
V
SD
I =700mA, V =0V
S
1.2
GS
Reverse Voltage
V
I
=0.5mA
15
V
V
R
R
V 1
F
I =0.3A
F
0.37
0.42
0.42
0.47
120
Forward Voltage
V 2
F
I =0.5A
F
V
Reverse Current
I
R
V
V
=15V
R
R
µA
pF
ns
Interterminal Capacitance
Reverse Recovery Time
C
=10V, f=1MHz
13
t
rr
I =I =100mA, See specified Test Circuit.
F R
10
Package Dimensions
unit : mm (typ)
Electrical Connection
7021A-008
5
4
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
2.0
0.15
5
4
3
0 to 0.02
Top view
1
2
3
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
1
2
3
4
5
SANYO : MCPH5
No. A0558-2/6
MCH5834
Switching Time Test Circuit
t
Test Circuit
rr
[MOSFET]
[SBD]
V
=15V
DD
V
IN
Duty≤10%
4V
0V
I
=350mA
D
V
IN
R =42Ω
L
50Ω
100Ω
10Ω
D
V
OUT
PW=10µs
D.C.≤1%
10µs
--5V
G
t
rr
MCH5834
P. G
50Ω
S
I
-- V
GS
I
-- V
[MOSFET]
[MOSFET]
D
D
DS
0.8
0.6
0.4
0.4
0.3
0.2
V =10V
DS
2.0V
0.2
0
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT07511
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DS
GS
0.8
0.9
1.0
Drain-to-Source Voltage, V
-- V
IT07510
Gate-to-Source Voltage, V
GS
-- V
[MOSFET]
R
(on) -- V
[MOSFET]
R
(on) -- Ta
DS
DS
5.0
4.0
3.0
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ta=25°C
350mA
I =200mA
D
1.0
0
0.2
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
--60 --40 --20
0
20
40
60
80
100 120 140
Ambient Temperature, Ta -- °C
IT09242
Gate-to-Source Voltage, V
GS
-- V
IT09241
No. A0558-3/6
MCH5834
yfs -- I
[MOSFET]
I
-- V
[MOSFET]
=0V
D
S
SD
3
2
3
2
V
V
=10V
GS
DS
1.0
7
5
1.0
7
5
3
2
3
2
0.1
7
5
3
2
0.1
7
5
0.01
0.01
0.2
2
3
5
7
2
3
5
7
0.4
0.6
0.8
1.0
1.2
1.4
IT07515
0.1
1.0
IT07514
Drain Current, I -- A
Diode Forward Voltage, V
-- V
SD
D
[MOSFET]
Ciss, Coss, Crss -- V
[MOSFET]
SW Time -- I
D
DS
60
50
40
30
20
3
2
V
V
=15V
DD
f=1MHz
=4V
GS
10
t (on)
d
7
5
10
0
3
2
5
0
5
10
15
20
25
30
IT09243
2
3
7
0.1
1.0
IT07516
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
DS
D
V
-- Qg
[MOSFET]
R
DS
(on) -- I
[MOSFET]
GS
D
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
V
=10V
V
=4V
DS
GS
I =0.7A
D
1.0
7
75
°
C
Ta=
°C
25
°C
--25
5
0.5
0
3
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
3
5
7
2
3
5
7
0.1
1.0
IT07519
Total Gate Charge, Qg -- nC
Drain Current, I -- A
D
IT09244
R
DS
(on) -- I
R
DS
(on) -- I
[MOSFET]
V =1.5V
GS
[MOSFET]
D
D
3
2
7
5
V
=2.5V
GS
3
2
Ta=75°C
1.0
25°C
--25°C
7
5
25°C
1.0
7
3
0.01
5
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0.1
1.0
IT07520
0.1
Drain Current, I -- A
IT07521
Drain Current, I -- A
D
D
No. A0558-4/6
MCH5834
A S O
P
-- Ta
[MOSFET]
[MOSFET]
D
5
0.8
0.6
0.4
I
=2.8A
DP
≤10µs
3
2
1.0
I =0.7A
D
7
5
3
2
Operation in this
area is limited by R (on).
0.1
7
5
DS
0.2
0
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
Drain-to-Source Voltage, V
-- V
IT11802
Ambient Temperature, Ta -- °C
IT11803
DS
I
-- V
[SBD]
[SBD]
I
-- V
F
F
R
R
100000
1.0
7
5
3
2
7
5
10000
7
5
3
2
3
2
1000
7
5
3
2
0.1
7
5
100
7
5
3
2
3
2
10
7
5
3
2
0.01
1.0
0
0
7
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
Reverse Voltage, V -- V
R
Forward Voltage, V -- V
F
IT07927
IT07928
P (AV) -- I
[SBD]
C -- V
[SBD]
F
O
R
0.35
0.3
100
7
f=1MHz
Sine wave
(1)
(2) (4) (3)
5
θ
360°
0.25
0.2
3
2
Rectangular wave
180°
360°
0.15
0.1
10
7
5
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.05
0
3
0.1
0.1
0.2
0.3
0.4
0.5
0.6
IT08187
2
3
5
7
2
3
5
7
10
2
3
5
7
1.0
Average Output Current, I -- A
Reverse Voltage, V -- V
IT07891
O
R
I
-- t
[SBD]
FSM
7
6
5
4
3
2
Current waveform 50Hz sine wave
I
S
20ms
t
1
0
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
ID00387
Time, t -- s
No. A0558-5/6
MCH5834
Note on usage : Since the MCH5834 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0558-6/6
相关型号：
MCH5837
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
SANYO
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