SCH1435 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | SCH1435 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1637
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SCH1435
Features
•
1.8V drive.
•
Halogen free compliance.
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±12
3
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
12
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
0.8
150
W
°C
°C
×
D
Tch
Tstg
--55 to +150
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D GS
I
V
V
=30V, V =0V
1
±10
1.3
A
A
μ
DSS
DS
GS
I
=±8V, V =0V
DS
μ
GSS
GS
V
(off)
|
V
=10V, I =1mA
0.4
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =1.5A
D
2.7
68
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=1.5A, V =4.5V
GS
89
126
195
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=0.75A, V =2.5V
GS
90
m
m
I
D
=0.3A, V =1.8V
GS
130
Marking : ZL
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
http://semicon.sanyo.com/en/network
No. A1637-1/4
42110PE TK IM TC-00002319
SCH1435
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Ciss
Conditions
Unit
min
max
Input Capacitance
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
265
35
pF
pF
pF
ns
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
DS
V
DS
28
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
5.1
d
r
10
ns
Turn-OFF Delay Time
Fall Time
(off)
137
36
ns
d
f
ns
Total Gate Charge
Qg
V
=15V, V =4.5V, I =3A
GS
3.5
nC
nC
nC
V
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=15V, V =4.5V, I =3A
GS
0.57
0.93
0.87
D
V
DS
=15V, V =4.5V, I =3A
GS
D
V
SD
I =3A, V =0V
S
1.2
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7028-002
V =15V
DD
V
IN
4.5V
0V
1.6
0.2
I
=1.5A
D
V
IN
0.2
R =10Ω
L
6
5 4
V
OUT
D
PW=10μs
D.C.≤1%
G
3
2
1
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SCH1435
P. G
50Ω
S
SANYO : SCH6
I
-- V
DS
I
-- V
D
D GS
6
5
4
3
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ta=25°C
V
=10V
DS
1
0
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, V
-- V
IT15268
Gate-to-Source Voltage, V
GS
-- V
IT15269
DS
No. A1637-2/4
SCH1435
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
300
250
200
150
100
250
200
150
100
Ta=25°C
I
=0.3A
D
0.75A
1.5A
50
0
50
0
0
2
4
6
8
10
IT15270
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT15271
GS
| yfs | -- I
I
-- V
D
S SD
7
5
7
5
V
=10V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
3
2
1.0
0.1
7
7
5
5
3
2
0.01
3
2
7
5
3
2
0.1
0.01
0.001
2
3
5
7
2
3
5
7
1.0
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
IT15273
0.1
Drain Current, I -- A
IT15272
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
7
5
f=1MHz
V
V
=15V
=4.5V
DD
GS
Ciss
3
2
100
7
5
100
3
2
7
5
10
3
2
7
5
t (on)
d
3
2
10
2
3
5
7
2
3
5
7
1
2
3
4
5
6
7
8
9
10
0.1
1.0
Drain Current, I -- A
IT15274
Drain-to-Source Voltage, V
-- V
IT15275
D
DS
A S O
V
GS
-- Qg
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
V
I
=15V
DS
=3A
I
=12A (PW≤10μs)
DP
D
10
7
5
I
=3A
D
3
2
1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
0.1
7
5
Ta=25°C
3
2
0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT15276
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0.1
1.0
Drain-to-Source Voltage, V
DS
-- V
IT15277
Total Gate Charge, Qg -- nC
No. A1637-3/4
SCH1435
P
-- Ta
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15278
Note on usage : Since the SCH1435 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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export license from the authorities concerned in accordance with the above law.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of April, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1637-4/4
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