STK611-721-E [SANYO]
Fan 3-phase Inverter Motor Drive Inverter Hybrid IC; 风扇三相变频电机驱动逆变器的混合集成电路
| 型号： | STK611-721-E |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Fan 3-phase Inverter Motor Drive Inverter Hybrid IC |
| 文件： | 总9页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1718A
Thick-Film Hybrid IC
Fan 3-phase Inverter Motor Drive
STK611-721-E
Inverter Hybrid IC
Overview
This “Inverter Power H-IC” includes the output stage of a 3-phase inverter, pre-drive circuits, as well as protection
circuits in one package.
Applications
• For 3-phase motor drive for fan etc.
Features
• Pre-drive low voltage protection circuits are built in.
• Direct input of CMOS level control signals without insulating circuits is possible.(Active HIGH)
• Built-in simultaneous upper/ lower ON prevention circuit to prevent arm shorting caused by simultaneous ON input
for the upper and lower side transistors.
(Dead time is required for preventing shorting due to switching delay.)
• Overcurrent protection is possible by connecting a shunt resistor externally.
• Monitoring substrate temperature is possible through the use of an internal thermistor.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
O0312HKPC 013-11-0064 No.A1718-1/9
STK611-721-E
Specifications
Absolute Maximum Ratings at Tc = 25°C
Parameter
Supply voltage
Symbol
Conditions
Ratings
unit
V
V
V
I
+ to -, surge < 450V
*1
450
600
2
CC
Collector-emitter voltage
Output current
+ to U (V, W) or U (V, W) to -
V
DS
+, -, U, V, W terminal current
A
O
Output peak current
Iop
+, -, U, V, W terminal current P.W. = 100μs
4
A
Pre-driver voltage
VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, V
HIN1, 2, 3, LIN1, 2, 3 terminal
FAULT/EN terminal
ITRIP terminal
to V
SS
*2
20
V
DD
Input signal voltage
V
0 to 15
20
V
IN
FAULT/EN terminal voltage
ITRIP terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating substrate temperature
Tightening torque
VFAULT
VITRIP
Pd
V
5
V
MOSFET/1 channel
MOSFET
16.6
150
W
°C
°C
°C
N•m
Tj
Tstg
Tc
-40 to +125
-20 to +100
0.6
H-IC case temperature
A screw part
*3
Reference voltage is “-” terminal = “V ” terminal voltage unless otherwise specified.
SS
*1 Surge voltage developed by the switching operation due to the wiring inductance between “+” and “-” terminals.
*2 Terminal voltage : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=V
*3 Flatness of the heat-sink should be 0.15mm and below.
to V
.
SS
DD
Electrical Characteristics at Tc=25°C, VD=15V
Parameter
Symbol
Conditions
Test circuit
min
typ
max
unit
Power output section
Drain-Source Leakage current
Drain-Source On Resistance
Diode forward voltage
I
V
= 600V
Fig.1
Fig.2
Fig.3
0.1
mA
Ω
DSS
DS
R
(ON)
DS
I
I
= 2A
4
1.5
7.5
D
D
V
= -2A
V
SD
Junction to case thermal resistance
Control (Pre-driver) section
Pre-driver power dissipation
θj-c(T)
MOSFET
°C/W
I
VD1, 2, 3 = 15V
0.05
0.2
4.0
2.5
1.5
D
Fig.4
mA
VD4 = 15V
1.4
2.1
1.3
Input ON threshold voltage
Input OFF threshold voltage
FAULT/EN clearness delay time
Vinth(on)
Vinth(off)
FLTCLR
HIN1, HIN2, HIN3, LIN1, LIN2,
1.5
0.8
V
V
LIN3 to V
SS
After each protection operation
ending
8
ms
Protection section
Pre-drive power supply
UVLO
Rt
8
9.8
V
low voltage protection voltage
Resistance for substrate temperature
monitors
Resistance between TH and
90
100
110
kΩ
V
terminals
SS
VFault = 0.15V
Fault/EN terminal input current
IOSD
2
mA
V
ITRIP threshold voltage
Switching time
VITRIP
0.41
0.465
0.52
tON
I
= 2A
0.8
1.5
O
Fig.5
μs
Inductive load
tOFF
Reference voltage is “-” terminal = “Vss” terminal voltage unless otherwise specified.
No.A1718-2/9
STK611-721-E
Notes
1. <<Input ON threshold voltage>> indicates the threshold of input signal to turn on output stage MOSFET.
<<Input OFF threshold voltage>> indicates the threshold of input signal to turn off output stage MOSFET.
At the time of output ON, set the input signal voltage to Vinth (on)MAX to 15V. At the time of output OFF, set the
input signal voltage to 0V to Vinth (off)MIN.
2. When the internal protection circuit operates, a “FAULT/EN” signal is turned ON (When the “FAULT/EN” terminal
is low level, “FAULT/EN” signal is ON state: output form is open DRAIN) but the “FAULT/EN” signal does not
latch. After protection operation ends, it returns automatically within typ. 8ms and resumes operation beginning
condition. So,after “FAULT/EN” signal detection, set all signals to OFF (LOW) at once.
However, the operation of pre-drive power supply low voltage protection (UVLO with hysteresis about 0.2V) is as
follows:
Upper side : There is no “FAULT/EN” signal output, but a corresponding gate signal is turned OFF. Incidentally, it
returns to the regular operation when recovering to the normal voltage, but the latch continues while the
input signal is ON (HIGH).
Lower side : It outputs “FAULT/EN” signal with gate signal OFF. However, it is different from the protection
operation of upper side, it is automatically reset and resumes operation beginning condition when
recovering to normal voltage. (The protection operation is not latched by the input signal.)
3. When assembling the H-IC on the heat sink, tightening torque range is 0.4N•m to 0.6•Nm.
4. The pre-drive low voltage protection is the function to protect devices when the pre-drive supply voltage declines
with an operating malfunction. As for the pre-driver supply voltage decline in case of operation beginning, and so on,
check it in your set.
5. Please seal the entire leads of H-IC with the resin for securing the insulation between leads after mounting H-IC on
the set.
Package Dimensions
unit:mm (typ)
29.2
25.6
(20.47)
4.5
2.0
(R1.7)
1
19
4.2
1.0
0.5
0.4
8.2
(5.6)
18 X1.0=18.0
(20.4)
No.A1718-3/9
STK611-721-E
Equivalent Block Diagram
VB3(5)
W,VS3(4)
VB2(7)
V,VS2(6)
VB1(9)
U,VS1(8)
+(3)
U.V.
U.V.
U.V.
-(2)
Level
Shifter
Level
Shifter
Level
Shifter
TH(1)
HIN1(11)
HIN2(12)
HIN3(13)
Logic
Logic
Logic
LIN1(14)
LIN2(15)
LIN3(16)
FAULT/EN(17)
ITRIP(10)
Latch time is typ 8ms
(Automatic reset)
Shut down
V
(18)
DD
Vref
V
-Under Voltage
DD
Thermistor
V
(19)
SS
No.A1718-4/9
STK611-721-E
Test Circuit
(The tested phase: U+ shows the upper side of the U phase and U- shows the lower side of the U phase.)
I
DSS
I
DSS
9
8
U+
3
V+
3
W+
3
U-
8
V-
6
W-
4
VD1=15V
VD2=15V
VD3=15V
VD4=15V
M
A
M
N
8
6
4
2
2
2
7
6
V
DS
5
4
18
19
N
Fig.1
V
(RDS) (Test by pulse)
DS
9
VD1=15V
VD2=15V
VD3=15V
M
U+
3
V+
3
W+
3
U-
8
V-
6
W-
4
8
M
N
7
6
8
6
4
2
2
2
m
11
12
13
14
15
16
I
O
V
5
4
V
(RDS)
DS
18
m
10
19
VD4=15V
5V
N
Fig.2
V (Test by pulse)
F
U+
V+
3
W+
3
U-
8
V-
6
W-
4
M
M
N
3
8
6
4
2
2
2
V
I
O
V
F
N
Fig.3
I
D
I
D
A
m
n
VD1
9
VD2
7
VD3
5
VD4
18
VD*
M
N
8
6
4
19
Fig.4
No.A1718-5/9
STK611-721-E
Switching time (The circuit is a representative example of the lower side U phase.)
1
3
8
VD1=15V
Input signal
(0 to 5V)
2
4
VD2=15V
5
7
V
90%
CC
VD3=15V
CS
8
10%
I
O
21
VD4=15V
I
O
Input signal
14
10
19
tON
tOFF
2
Fig.5
No.A1718-6/9
STK611-721-E
Sample Application Circuit
STK611-721-E
TH:1
RP
+5V
CB
VB1:9
+:3
-:2
VD1
VD2
VD3
U,VS1:8
V
CC
CS1
CS2
VB2:7
CB
CB
V,VS2:6
Rshunt
RF
VB3:5
W,VS3:4
To ITRIP CF
DB
U,VS1:8
V,VS2:6
W,VS3:4
RB
ITRIP:10
HIN1:11
HIN2:12
HIN3:13
LIN1:14
LIN2:15
LIN3:16
M
Control
circuit
(5V)
RP
+5V
FAULT/EN:17
V
:18
:19
DD
CD
VD=15V
V
SS
Recommendation Operating Conditions
Parameter
Supply voltage
Symbol
Conditions
+ to - terminal
VB1 to U, VB2 to V, VB3 to W
to V
min
typ
max
400
unit
V
V
0
12.5
13.5
3.0
0
CC
Pre-driver supply voltage
VD1, 2, 3
VD4
15
15
17.5
16.5
5.0
V
V
V
*1
DD
SS
ON-state input voltage
OFF-state input voltage
PWM frequency
V
V
(ON)
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3
IN
(OFF)
0.3
IN
fPWM
DT
1
20
kHz
μs
Dead time
Turn-off to turn-on
ON and OFF
2
Allowable input pulse width
Tightening torque
PWIN
1
μs
‘M3’ type screw
0.4
0.6
N•m
*1 Pre-driver power supply (VD4 = 15 1.5V) must have the capacity of I = 20mA (DC), 0.5A (Peak).
O
No.A1718-7/9
STK611-721-E
Usage Precaution
1. By the addition of the diode for the bootstrap (DB : high speed type with withstand voltage of 600V or more) and of
the capacitor (CB : about 1 to 47μF), a single power supply drive is enabled. In this case, an electric charge is
charged to CB by turning on the lower side IGBT (By inputting LOW signal to lower side). The problem of causing
the adverse effect by the noise etc. might occur because big charging current flows when the voltage of CB is low as
started, and put limitation resistor RB (About tens of Ω from the number of Ω), please. (When not using bootstrap
circuit, each upper side pre-driver needs an external independent power supply.) Also, the upper side power supply
voltage sometimes declines depending on controlling condition. Please confirm the voltage with an actual set.
2. The voltage jump associated with vibration caused by the switching operation occurs through the influence of
floating inductance on the wiring of the external power supply, which is connected to “+” and “-” terminals; therefore,
it is recommended that the wiring inductance be low by shortening the wiring length (between CI and each terminal)
and the snubber circuit (capacitor/CS/about 0.1 to 10μF) for voltage absorption be connected as close as possible
between “+” and “-” terminals to reduce the surge voltage.
3. Output form of “FAULT/EN” terminal (pin 17) is open DRAIN (it operates as “FAULT” when becoming “LOW”).
Moreover, please connect the pull-up resistor (RP) so that the voltage of this terminal may usually become 2.5V or
more because this terminal holds the shutdown input of internal pre-driver (It usually operates by 2.5V or more, and
stop operation by 0.8V or less) concurrently. When the pull-up voltage is 5V, use RP with resistance 6.8kΩ or more,
and in case of 15V, use RP with resistance 20kΩ or more.
4. Inside the H-IC, a thermistor is connected between “TH” terminal (pin 1) and “V ” terminal (pin 19). The
SS
thermistor can be used as the temperature monitor by connecting the pull-up resistor (RP) externally. When the pull-
up voltage is 5V, use “RP” with resistance 10kΩ or more, and in case of 15V, use “RP” with resistance 39kΩ or
more.
5. Although the pull-down resistor is connected with the inside of the signal input terminal, connect the pull-down
resistor (about 2.2 to 3.3kΩ) outside to decrease the influence of the noise by wiring etc.
6. The H-IC may be destroyed when the motor connection terminals (pins 4, 6 and 8) are opened while the motor is
running; therefore please be especially careful about the connection (soldering condition) of these terminals.
7. The “ITRIP” terminal (pin 16) is the input terminal of the built-in comparator. It can stop operation by inputting the
voltage
more than VITRIP (0.41V to 0.52V). (Apply voltage less than VITRIP to this pin when normal operation).
Please use it as various protections such as the overcurrent protection (feedback from external shunt resistor).
In addition, the protection operation will not be latched.
After the protection operation ends, the H-IC operation resumes typ.8ms later. Therefore, turn all the input signals
OFF (low) as soon as the protection operation is detected.
8. When input pulse width is less than 1μs, an output may not react to the pulse. (Both ON signal and OFF signal)
This data shows the example of the application circuit and does not guarantee a design as the mass production set.
No.A1718-8/9
STK611-721-E
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of October, 2012. Specifications and information herein are subject
to change without notice.
PS
No.A1718-9/9
相关型号：
©2020 ICPDF网 联系我们和版权申明