2SD2401 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SD2401 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2401
DESCRIPTION
·With MT-200 package
·Complement to type 2SB1570
·DARLINGTON
APPLICATIONS
·Audio, series regulator and
general purpose applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (MT-200) and symbol
3
Emitter
Absolute maximum ratings (Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
160
150
5
UNIT
V
Open base
V
Open collector
V
12
A
IB
Base current
1
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
150
150
-55~150
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2401
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter breakdown voltage IC=30mA; IB=0
150
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=7 A;IB=7m A
IC=7 A;IB=7m A
VCB=160V; IE=0
VEB=5V; IC=0
2.5
3.0
V
100
100
µA
µA
IEBO
hFE
IC=7A ; VCE=4V
IC=2A ; VCE=12V
IE=0; VCB=10V;f=1MHz
5000
fT
Transition frequency
55
95
MHz
pF
COB
Output capacitance
Switching times
ton
Turn-on time
0.5
10.0
1.1
µs
µs
µs
IC=7A;RL=10Ω
IB1=- IB2=7mA
VCC=70V
ts
Storage time
Fall time
tf
ꢀ hFE classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2401
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号:
2SD2401O
Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN
SANKEN
2SD2401P
Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN
SANKEN
2SD2401Y
Power Bipolar Transistor, 12A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT200, 3 PIN
SANKEN
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
NEC
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