BU407 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BU407
型号: BU407
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件: 总4页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU406 BU407  
DESCRIPTION  
·With TO-220C package  
·High voltage;high speed  
·Low collector saturation voltage  
APPLICATIONS  
·For use in horizontal deflection output  
stages of TV’s and CTV’s circuits  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
400  
330  
200  
150  
6
UNIT  
BU406  
BU407  
BU406  
BU407  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
VCEO  
Collector-emitter voltage  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
7
Collector current-Peak  
Base current  
10  
4
Ptot  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
60  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction to case  
2.08  
/W  
Rth j-c  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU406 BU407  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
200  
150  
TYP.  
MAX  
UNIT  
BU406  
BU407  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=100mA ; IB=0  
V
VCEsat  
Collector-emitter saturation voltage IC=5A ;IB=0.5A  
1.0  
1.2  
V
V
VBEsat  
Base-emitter saturation voltage  
IC=5A ;IB=0.5A  
BU406  
VCE=400V; VBE=0  
VCE=330V; VBE=0  
VEB=6.0V; IC=0  
ICES  
Collector cut-off current  
5
mA  
mA  
BU407  
IEBO  
hFE  
fT  
Emitter cut-off current  
DC current gain  
Transition frequency  
Output capacitance  
Fall time  
1.0  
IC=2A ; VCE=5V  
40  
10  
120  
IC=0.5A ;VCE=10V;f=1.0MHz  
MHz  
pF  
COB  
IE=0 ;VCB=10V;f=1.0MHz  
IC=5A ;VCC=40V  
80  
tf  
0.75  
µs  
I
B1 =-IB2=0.6A;L=150µH  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU406 BU407  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)  
3
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU406 BU407  
4

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