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MJE800 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
MJE800
型号： MJE800
厂家： Savantic, Inc.    Savantic, Inc.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：103K)
中文：  中文翻译
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SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE800/801/802/803  
DESCRIPTION  
·With TO-126 package  
·Complement to type MJE700/701/702/703  
·High DC current gain  
·DARLINGTON  
APPLICATIONS  
·Designed for general–purpose amplifier  
and low–speed switching applications  
PINNING (see Fig.2)  
PIN  
DESCRIPTION  
1
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
MJE800/801  
MJE802/803  
MJE800/801  
MJE802/803  
60  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
V
60  
VCEO  
Collector-emitter voltage  
Open base  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
A
W
ꢀ
4
IB  
Base current  
0.1  
40  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
150  
-55~150  
ꢀ
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE800/801/802/803  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
MJE800/801  
MJE802/803  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=50mA;IB=0  
V
80  
MJE800/802 IC=1.5A ;IB=30mA  
MJE801/803 IC=2A ;IB=40mA  
2.5  
2.8  
3.0  
Collector-emitter  
saturation voltage  
V
V
VCE  
-1  
-2  
(sat)  
Collector-emitter saturation voltage IC=4A ;IB=40mA  
VCE  
(sat)  
MJE800/802 IC=1.5A ; VCE=3V  
Base-emitter  
VBE-1  
VBE-2  
ICEO  
2.5  
3.0  
100  
V
on voltage  
MJE801/803 IC=2A ; VCE=3V  
Base-emitter  
IC=4A ; VCE=3V  
on voltage  
V
MJE800/801 VCE=60V; IB=0  
Collector  
µA  
cut-off current  
MJE802/803 VCE=80V; IB=0  
VCB=Rated BVCEO; IE=0  
TC=100ꢀ  
100  
500  
ICBO  
IEBO  
Collector cut-off current  
Emitter cut-off current  
µA  
VEB=5V; IC=0  
2
mA  
MJE800/802 IC=1.5A ; VCE=3V  
MJE801/803 IC=2A ; VCE=3V  
IC=4A ; VCE=3V  
hFE-1  
DC current gain  
DC current gain  
750  
100  
hFE-2  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE800/801/802/803  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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