2SD1994A [SECOS]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | 2SD1994A |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总3页 (文件大小：660K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1994A
NPN
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
TO-92
z
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
G
H
1Emitter
2Collector
3Base
z
J
A
D
Collector
Millimeter
REF.
B
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
2
A
B
C
D
E
F
G
H
J
4.70
4.70
-
3.81
0.56
0.51
K
E
3
Base
C
F
1.27 TYP.
1.10
2.42
0.36
-
1
Emitter
2.66
0.76
K
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
a
Parameter
Symbol
VCBO
Ratings
Unit
60
Collector - Base Voltage
V
V
V
A
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
VCEO
50
VEBO
5
IC
1
Total Power Dissipation
Junction, Storage Temperature
PC
1
W
TJ, TSTG
+150, -55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
a
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
50
5
-
-
-
V
V
IC = 10 μA, IE = 0
-
IC = 2 mA, IB = 0
-
-
V
IE = 10 μA, IC = 0
-
-
0.1
0.1
340
-
μA
μA
VCB = 20V, IE = 0
Emitter Cut - Off Current
IEBO
-
-
VEB = 5V, IC = 0
hFE(1)
85
50
-
-
VCE = 10V, IC = 500 mA
VCE = 5V, IC = 1 A
IC = 500mA, IB = 50 mA
IC = 500mA, IB = 50 mA
DC Current Gain
hFE(2)
-
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
f T
-
0.4
1.2
-
V
V
-
-
200
-
-
MHz
pF
VCE = 10V, IB = 50 mA, f = 200MHz
VCB = 10V,IE = 0, f = 1MHz
Collector Output Capacitance
Cob
-
20
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
Range
85 - 170
120 - 240
170 - 340
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 1 of 3
2SD1994A
NPN
General Purpose Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 2 of 3
2SD1994A
NPN
General Purpose Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES (cont’d)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 3 of 3
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