BCP4672 [SECOS]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | BCP4672 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总2页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP4672
2A, 60V
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
The BCP4672 is designed for low frequency amplifier applications.
4
MARKING
1
2
3
4 6 7 2
A
E
Date Code
C
B
D
K
CLASSIFICATION OF hFE
F
G
H
BCP4672-A
BCP4672-B
200~400
Product Rank
J
L
Range
120~240
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.60
4.25
1.60
2.60
Min.
Max.
PACKAGE INFORMATION
A
B
C
D
4.40
3.94
1.40
2.30
G
H
J
0.40
0.58
1.50 TYP
3.00 TYP
Package
MPQ
1K
LeaderSize
K
0.32
0.35
0.52
0.44
E
F
1.50
0.89
1.70
1.2
L
SOT-89
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Unit
Parameter
Symbol
Ratings
Collector-Base Voltage
VCBO
VCEO
VEBO
60
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
6
Collector Current (DC)
2
IC
A
Collector Current (Pulse)
Total Power Dissipation
Junction & Storage Temperature
5
PD
2
W
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
60
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-
-
-
V
V
IC= 50A, IE=0
IC= 1mA, IB=0
50
-
-
6
-
V
IE= 50A, IC=0
VCB= 60V, IE=0
VEB= 5V, IC=0
-
-
100
100
0.35
400
-
nA
nA
V
Emitter cut-off current
IEBO
-
-
Collector-emitter saturation voltage
DC current gain
VCE(sat)
*
-
0.1
-
IC= -1A, IB= 50mA
VCE= 2V, IC= 500mA
hFE*
120
Transition frequency
fT
-
-
210
25
MHz VCE= 2V, IC= 500mA, f=100MHz
pF VCB= 10V, IE=0, f=1MHz
Collector output capacitance
Cob
-
*Measured under pulse condition. Pulse width≦380μs, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010 Rev. B
Page 1 of 2
BCP4672
2A, 60V
NPN Epitaxial Silicon Transistor
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010 Rev. B
Page 2 of 2
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