KS05B3 [SECOS]
40 W Transient Voltage Suppressors Diode; 40瓦瞬态电压抑制器二极管
| 型号： | KS05B3 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 40 W Transient Voltage Suppressors Diode |
| 文件： | 总2页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KS05B3
VOLTAGE: 5.0V
Elektronische Bauelemente
40 W Transient Voltage Suppressors Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-143
DESCRIPTION
10o
.075(1.90)
Ref
. Designed to protect voltage sensitive components from ESD.
. Excellent clamping capability, low leakage and fast response.
. Cellular phones, MP3 players, digital cameras ... etc.
o
0
.023Ref
(0.57)Ref
. Suitable for electronics where board space is a major design consideration.
.018(0.45)
.014(0.35)
.055(1.40)
.047(1.20)
.100(2.55)
.089(2.25)
.033(0.84)
.030(0.76)
.
(0.40)Ref
.016 Ref
.071(1.80)
.063(1.60)
.006(0.16)
.003(0.08)
FEATURES
. Response time is typically < 1 ns
. Low leakage
.118(3.00)
.110(2.80)
.004(0.10)
.000(0.00)
. Stand-off voltage:5.0V
. IEC61000-4-2 level 4 ESD protection
. Ulta Low Capacitance : 22pF
.051(1.30)
.039(1.00)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
3
4
2
1
MAXIMUM RATINGS
Rating 25oC ambient temperature unless otherwise specified.
TYPE NUMBER
IEC61000-4-2, Level 4(ESD)
SYMBOL
LIMITS
UNITS
kV
Air
Contact
>30
>20
40
Ppp
Ipp
Pack Pulse power tp=8/20us
W
A
Pack Pulse Current tp=8/20us
2.0
260
430
o
Lead Solder Temperature - Max. (10 sec duration)
Thermal Resistance Junction-to-ambient
Junction and Storage Temperature Range
Total Power Dissipation on FR-5 board (Note 2)
TL
RθJA
TJ,TSTG
PD
C
o
C/W
o
-55 ~ +150
150
C
mW
Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above
the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.62 in.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad.
ELECTRICAL CHARACTERISTICS (T= 25 oC unless otherwise noted,
Per Diode)
TYPE NUMBER
SYMBOL
VRWM
Min.
-
Typ.
-
Max.
5.0
UNIT
V
TEST CONDITIONS
Reverse Stand-Off Voltage
5
V
Reverse Leakage Current
IR
-
35
nA
VRWM
=
10
-
Peak Pulse Current
Clamping Voltage
Clamping Voltage
IPP
VC
-
-
2.0
9.5
A
V
-
I
PP = 1 A
PP = 2 A
11
7.2
28
I
VC
-
V
V
-
-
Reverse Breakdown Voltage
Diode Capacitance
VBR
6.1
IT = 1mA,
F=1MHz,VR=0V
pF
Cd
-
22
http://www.SeCoSGmbH.com/
24-Sep-2007 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
KS05B3
VOLTAGE: 5.0V
Elektronische Bauelemente
40 W Transient Voltage Suppressors Diode
ELECTRICAL CHARACTERISTIC CURVES
Pulse Waveform
Clamping Voltage vs. Peak Pulse Current
110
100
90
80
70
60
50
40
30
20
10
0
15
10
5
Waveform
Parameters
tr = 8µs
td = 20µs
e-t
td = IPP/2
0
0
1
2
3
0
5
10
15
20
25
30
Peak Pulse Current-Ipp(A)
Time (uS)
Typical Capacitance vs. Reverse Voltage
Recommended Pad Layout
30
20
0.80 (.032")
1.00 (.040")
1.40 (.055")
MAX
2.20
(.087")
REF
1.90
(.075")
1.70
(.067")
BSC
3.40 (.134")
3.60 (.140")
10
0
0
2
1
5
4
3
1.00 (.040") 0.80 (.032")
1.20 (.048") 1.00 (.040")
Diode Reverse Voltage (V)
http://www.SeCoSGmbH.com/
24-Sep-2007 Rev. B
Any changing of specification will not be informed individual
Page 2 of 2
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