KTC3205-Y [SECOS]
NPN Silicon General Purpose Transistor;
| 型号： | KTC3205-Y |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Silicon General Purpose Transistor |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC3205
NPN Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92L
FEATURE
G
H
ꢀ
Low collector to emitter saturation voltage VCE(sat)
Audio power amplifier
High Current
.
ꢀ
ꢀ
J
1Emitter
2Collector
3Base
A
D
CLASSIFICATION OF hFE
Millimeter
REF.
Min.
4.70
7.80
13.80
3.70
0.35
0.35
Max.
5.10
8.20
14.20
4.10
0.55
0.45
B
Product-Rank
KTC3205-O
KTC3205-Y
160~320
A
B
C
D
E
F
K
E
Range
100~200
C
F
G
H
J
1.27 TYP.
1.28
2.44
0.60
1.58
2.64
0.80
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
IC
30
30
5
V
V
V
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
2
A
PC
1
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=1mA, IE=0
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
-
-
-
V
V
V
30
-
IC=10mA, IB=0
IE=1mA, IC=0
5
-
-
-
-
0.1
0.1
320
2
µA VCB=30V, IE=0
µA VEB=5V, IC=0
VCE=2V, IC=500mA
Emitter cut-off current
IEBO
-
-
-
DC Current Gain
hFE
100
Collector to Emitter Saturation Voltage
Base – Emitter Voltage
VCE(sat)
VBE
-
-
-
-
-
V
V
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
-
1
Transition Frequency
fT
120
13
-
MHz VCE=2V, IC=500mA
pF VCB=10V, IE=0, f=1MHz
Collector Output Capacitance
Cob
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Nov-2012 Rev. A
Page 1 of 1
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