SBL20U100DS1-C [SECOS]

Low VF Trench Barrier Schottky Rectifier;
SBL20U100DS1-C
型号: SBL20U100DS1-C
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Low VF Trench Barrier Schottky Rectifier

文件: 总2页 (文件大小:241K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SBL20U100DS1  
Voltage 100V 20.0 Amp  
Low VF Trench Barrier Schottky Rectifier  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
FEATURES  
Trench Barrier Schottky technology  
Low forward voltage drop  
Low reverse current  
TO-252  
MECHANICAL DATA  
Case: Molded plastic  
Epoxy: UL94V-0 rate flame retardant  
Lead: Lead solderable per MIL-STD-202  
method 208 guaranteed  
A
C
D
B
Polarity: As Marked  
Pin2  
PACKAGE INFORMATION  
Package  
MPQ  
Leader Size  
G E  
TO-252  
2.5K  
13 inch  
Pin3  
K
H F  
Pin1  
N
O
P
ORDER INFORMATION  
Part Number  
Configuration  
M
J
Type  
SBL20U100DS1  
Lead (Pb)-free  
Millimeter  
Min. Max.  
Millimeter  
Min. Max.  
2.3 REF.  
0.89 REF.  
0.45 1.14  
1.55 Typ.  
REF.  
REF.  
A
B
C
D
E
F
6.3  
4.95  
2.1  
0.4  
6
6.9  
5.53  
2.5  
0.9  
7.7  
J
K
M
N
O
P
SBL20U100DS1-C  
Lead (Pb)-free and Halogen-free  
0
0.15  
2.90 REF  
0.58 REF.  
G
H
5.4  
0.6  
6.4  
1.2  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Parameter  
Symbol  
VRRM  
VRSM  
VDC  
Rating  
100  
Unit  
Maximum Recurrent Peak Reverse Voltage  
Working Peak Reverse Voltage  
V
V
V
A
100  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
Superimposed on rated load (JEDEC method)  
Voltage Rate of Chance (Rated VR)  
IF  
20  
IFSM  
250  
A
dv/dt  
10000  
6
V / µs  
°C /W  
°C  
Typical Thermal Resistance 1  
Rθ  
JC  
Operating and Storage Temperature Range  
TJ,TSTG  
-40~150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Typ.  
Max.  
0.47  
0.63  
0.73  
0.8  
-
Unit  
Test Condition  
IF=3A, TJ=25°C  
IF=10A, TJ=25°C  
IF=15A, TJ=25°C  
IF=20A, TJ=25°C  
IF=20A, TJ=125°C  
TJ=25°C  
0.44  
0.58  
0.67  
0.75  
0.7  
-
Maximum Instantaneous Forward Voltage  
VF  
V
0.2  
20  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage 2  
Typical Junction Capacitance 3  
IR  
mA  
pF  
TJ=100°C  
-
CJ  
740  
-
Notes:  
1. Surface mounted on 2.5cm x 2.5cm x 0.5mm copper pad area.  
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.  
3. Measured at 1MHz and applied reverse voltage of 5.0V D.C  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-Jun-2018 Rev. A  
Page 1 of 2  
SBL20U100DS1  
Voltage 100V 20.0 Amp  
Low VF Trench Barrier Schottky Rectifier  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-Jun-2018 Rev. A  
Page 2 of 2  

相关型号:

SBL20U100F

Voltage 100V 20.0 Amp Low VF Trench MOS Barrier Schottky Rectifier
SECOS

SBL20U120

Voltage 102V 20.0 Amp Low VF Trench MOS Barrier Schottky Rectifier
SECOS

SBL20U120F

Voltage 102V 20.0 Amp Low VF Trench MOS Barrier Schottky Recifier
SECOS

SBL20U150F

Low VF Trench Barrier Schottky Rectifier
SECOS

SBL20U150F_15

Low VF Trench Barrier Schottky Rectifier
SECOS

SBL20U45

Low VF Planar MOS Barrier Schottky Rectifier
SECOS

SBL20U45F

Low VF Planar MOS Barrier Schottky Rectifier
SECOS

SBL20U45F_15

Low VF Planar MOS Barrier Schottky Rectifier
SECOS

SBL20U45_15

Low VF Planar MOS Barrier Schottky Rectifier
SECOS

SBL20U60

Voltage 60V,20.0Amp Low VF Planar MOS Barrier Schottky Rectifier
SECOS

SBL20U60CTH

Power Schottky Rectifier - 20Amp 60Volt
SIRECT

SBL20U60F

Voltage 60V,20.0 AMP Low VF Planar MOS Barrier Schottky Rectifier
SECOS