SGM0410 [SECOS]
3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET; 3.5A ， 100V ， RDS （ ON） 170米？ N沟道增强型功率MOSFET
| 型号： | SGM0410 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：1535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-89
The SGM0410 provide the designer with the best
A
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
4
Top View
C B
1
2
3
K
F
L
E
D
FEATURES
G
H
J
ꢀ
ꢀ
ꢀ
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
Millimeter
Millimeter
Min. Max.
REF.
REF.
Min.
Max.
4.60
4.25
2.60
1.60
A
B
C
D
E
F
4.40
4.05
2.40
1.40
G
H
J
-
-
0.89
0.35
0.70
1.20
0.41
0.80
MARKING
K
L
3.00 REF.
1.50 REF.
0410
0.40
0.52
ꢁꢁꢁꢁ
ꢁ
= Date code
D
24
PACKAGE INFORMATION
1
G
Package
MPQ
1K
Leader Size
SOT-89
7 inch
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
100
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
VGS=5V, TA=25°C
VGS=5V, TA=70°C
3.5
A
Continuous DrainCurrent3@
ID
2.2
A
Pulsed Drain Current1,2
Power Dissipation
IDM
P D
10
A
TA=25°C
2
W
Linear Derating Factor
0.016
-55~150
W / °C
°C
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient3(Max).
Rθ
JA
62.5
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3-Nov-2011 Rev. A
Page 1 of 4
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
gfs
Min. Typ. Max. Unit
Teat Conditions
VGS=0, ID=1mA
100
-
-
-
V
V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
VGS=±20V
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
4
-
S
IGSS
-
±100
nA
µA
IDSS
-
10
VDS=100V, VGS=0
VGS=10V, ID=2.6A
VGS=5V, ID=1.7A
-
170
Static Drain-Source On-Resistance
RDS(ON)
mΩ
-
200
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time 2
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
11.2
4.4
3
-
-
-
-
-
-
-
-
-
-
ID=3.5A
VDS=80V
VGS=5V
nC
9
VDD=30V
ID=1A
VGS=10V
RG=6Ω
9.4
26.8
2.6
975
38
27
nS
Turn-off Delay Time
Fall Time
Td(off)
Tf
RD=30Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0
VDS=25V
f=1.0 MHz
pF
V
Source-Drain Diode
1.5
Forward On Voltage2
VSD
-
-
IS=3.5A, VGS=0
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test.
3. Surface mounted on 1 in2 copper pad of FR4 board;135°C /w when mounted on Mi n. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3-Nov-2011 Rev. A
Page 2 of 4
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3-Nov-2011 Rev. A
Page 3 of 4
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3-Nov-2011 Rev. A
Page 4 of 4
相关型号：
©2020 ICPDF网 联系我们和版权申明