SMG2321P [SECOS]
P-Channel Enhancement MOSFET; P沟道增强型MOSFET
| 型号： | SMG2321P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize
A
high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry.
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
D
Low RDS(on) provides higher efficiency and extends
battery life.
H
J
G
Miniature SC-59 surface mount package saves
board space.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
Fast switching speed.
High performance trench technology.
Low gate charge 7.2Nc.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.20
K
0.45
0.55
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
APPLICATION
DC-DC converters, power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
±8
V
V
TA=25°C
TA=70°C
-4.1
Continuous Drain Current 1
ID
A
-3.3
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
IDM
IS
±10
A
A
±0.46
1.25
0.8
TA=25°C
TA=70°C
Power Dissipation 1
PD
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
t≦5 sec
RθJA
100
150
Maximum Junction to Ambient 1
Notes:
°C/W
Steady-State
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 1 of 4
SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
Static
Test Conditions
Gate-Threshold Voltage
VGS(th)
IGSS
-0.4
-
-
±100
-1
V
VDS=VGS, ID = -250μA
VDS=0, VGS= ±8V
Gate-Body Leakage
-
-
-
nA
-
VDS= -16V, VGS=0
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
ID(ON)
μA
A
-
-
-10
-
VDS= -16V, VGS=0, TJ=55°C
VDS= -5V, VGS= -4.5V
VGS= -4.5V, ID= -4.1A
VGS= -2.5V, ID= -3.2A
VDS= -5V,,ID= -1.25A
IS= -0.46A, VGS=0
-5
-
-
-
0.079
0.110
-
RDS(ON)
Ω
-
-
9
Forward Transconductance 1
Diode Forward Voltage
gFS
-
S
V
VSD
-
-0.65
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
-
-
-
7.2
-
-
-
-
-
-
-
-
-
-
ID= -4.1A
nC
pF
V
V
DS= -10V
GS= -4.5V
1.7
1.5
520
130
70
Qgd
CISS
COSS
CRSS
Td(ON)
Tr
VDS=15V,
GS=0V,
V
f=1MHz
8
VDD= -10V
18
VGEN= -4.5V
nS
RG=6Ω
IL= -1A
Turn-Off Delay Time
Td(OFF)
Tf
52
Fall Time
Notes:
39
1
2
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 2 of 4
SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 3 of 4
SMG2321P
-4.1A , -20V , RDS(ON) 79 m
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 4 of 4
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