SMG2359P [SECOS]
P-Channel Enhancement MOSFET; P沟道增强型MOSFET
| 型号： | SMG2359P |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process
To provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
L
3
3
Top View
C B
1
1
2
FEATURES
2
K
F
E
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
D
H
J
G
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
PRODUCT SUMMARY
PRODUCT SUMMARY
0.10
0.45
0.85
0.20
0.55
1.15
K
E
F
1.70
0.35
2.30
0.50
L
ID(A)
-1.6
-1.3
VDS(V)
RDS(on) (
0.381@VGS= -10V
0.561@VGS= -4.5V
Drain
-60
Gate
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
RATING
-60
UNIT
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
TA=70°C
1.7
Continuous Drain Current A
ID
A
1.4
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
IDM
IS
±15
A
A
-1.7
TA=25°C
TA=70°C
1.3
Power Dissipation A
PD
W
0.8
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
THERMAL RESISTANCE DATA
t≦5 sec
RθJA
100
166
Maximum Junction to Ambient A
°C/W
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A
Page 1 of 4
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
SYMBO
PARAMETER
MIN TYP MAX UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
-1
-2.1
-3.5
±100
-1
V
VDS = VGS, ID = -250μA
-
-
nA VDS = 0V, VGS= ±20V
-
-
-
VDS = -48V, VGS= 0V
μA
Zero Gate Voltage Drain Current
IDSS
-
-10
-
VDS = -48V, VGS= 0V, TJ=55°C
On-State Drain Current A
ID(ON)
-8
-60
-
-
-
A
V
VDS = -5V, VGS= -10V
VGS = 0, ID = -1mA
Drain-Source Breakdown Voltage
VBR(DSS)
-
300
450
8
381
561
-
VGS= -10V, ID = -1.6A
VGS= -4.5V, ID = -1.3A
VDS= -15V,,ID = -1.6A
IS= -2.5A, VGS=0V
Drain-Source On-Resistance A
RDS(ON)
mΩ
-
Forward Transconductance A
Diode Forward Voltage
gFS
-
S
V
VSD
-
-
-1.2
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
18
-
-
-
-
-
-
-
ID= -1.6A
5
2
nC VDS= -30V
VGS= -4.5V
Qgd
Td(ON)
Tr
8
ID= -1A, VDD= -30V
10
35
12
VGEN= -10V
RG= 6Ω
nS
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
RL= 30Ω
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A
Page 2 of 4
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A
Page 3 of 4
SMG2359P
-1.6 A, -60 V, RDS(ON) 0.381
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Jun-2010 Rev. A
Page 4 of 4
相关型号：
©2020 ICPDF网 联系我们和版权申明