SSG4520H_12 [SECOS]
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET; N-CH ： 6.6A ， 20V ， RDS （ ON ） 47米P -CH ： -5.2A ， -20V ， RDS （ ON ） 79 MN ＆ P沟道增强型功率MOSFET
| 型号： | SSG4520H_12 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总6页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
DS(on) and to ensure minimal power loss and heat
B
R
dissipation.
L
D
M
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
Fast switching speed
A
C
J
N
E
K
H
G
F
High performance trench technology
Millimeter
Min. Max.
5.8 6.20
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
H
J
K
L
M
N
0.35
0.51
4.80
3.80
0°
0.50
0.19
5.00
4.00
8°
0.93
0.25
0.375 REF.
APPLICATION
45°
1.35
0.10
1.75
0.25
DC-DC converters and power management in
0.25 REF.
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
G
1.27 TYP.
Top View
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOP-8
2.5K
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Parameter
Symbol
Unit
N-CH
20
P-CH
-20
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
V
±8
±8
TA = 25°C
TA = 70°C
6.6
5
-5.2
-3.8
-20
A
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
IDM
IS
20
A
Continuous Source Current (Diode Conduction) 1
2.2
-2.2
A
TA = 25°C
Total Power Dissipation 1
2.1
1.3
W
W
°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
t≦10 sec
Steady State
62.5
110
°C / W
°C / W
Maximum Junction-to-Ambient 1
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 1 of 6
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Ch
Symbol
Min.
Typ.
Static
Max.
Unit
Teat Conditions
N
P
N
P
N
P
N
P
1
-
-
-
VDS=VGS, ID=250μA
DS=VGS, ID= -250μA
VDS=0, VGS=8V
DS=0, VGS= -8V
VDS=8V, VGS=0
DS= -8V, VGS=0
VDS=5V, VGS=4.5V
DS= -5V, VGS= -4.5V
VGS=4.5V, ID=5.3A
GS=2.5V, ID=5A
VGS= -4.5V, ID= -4.2A
GS= -2.5V, ID= -3.8A
VGS=0, IS=1.1A
GS=0, IS= -1.1A
VDS=10V, ID=5.3A
DS= -10V, ID= -4.2A
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
V
nA
μA
A
-1
-
V
-
-
±100
±100
1
IGSS
-
-
V
-
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
10
-10
-
-
-1
V
-
-
ID(on)
-
-
V
-
-
47
55
79
110
N
P
-
V
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
-
-
V
N
P
N
P
0.7
-0.73
10
10
Diode Forward Voltage
VSD
V
S
V
-
-
-
-
Forward Transconductance 1
gfs
V
Dynamic 2
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
439
683
78
90
68
75
6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
N-Channel
DS=15V, VGS=0, f=1MHz
V
pF
P-Channel
DS= -15V, VGS=0, f=1MHz
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-Channel
ID=5.3A, VDS=10V, VGS=4.5V
11
0.9
2.8
2.1
2.7
7
Qgs
Qgd
Td(on)
Tr
nC
P-Channel
ID= -4.2A, VDS= -10V, VGS= -4.5V
N-Channel
10
24
20
35
49
19
21
VDD=10V, VGEN=4.5V
ID=5.3A, RGEN=6Ω, RL=1.8Ω
nS
P-Channel
Turn-Off Delay Time
Td(off)
VDD= -10V, VGEN= -4.5V
ID= -4.2A, RGEN=6Ω, RL=2.3Ω
Fall Time
Notes:
Tf
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 2 of 6
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 3 of 6
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 4 of 6
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 5 of 6
SSG4520H
N-Ch: 6.6A, 20V, RDS(ON) 47 m
P-Ch: -5.2A, -20V, RDS(ON) 79 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2012 Rev. D
Page 6 of 6
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