S1F76310M1B0 [SEIKO]
Switching Regulator, 0.1A, 50kHz Switching Freq-Max, CMOS, PDSO8, SOP3-8;
| 型号： | S1F76310M1B0 |
| 厂家： | 
SEIKO EPSON CORPORATION |
| 描述： | Switching Regulator, 0.1A, 50kHz Switching Freq-Max, CMOS, PDSO8, SOP3-8 光电二极管 |
| 文件： | 总21页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1F76300 Series
The S1F76300 series of CMOS switching regulators
comprises nine series—the S1F76310, S1F76380 series
featuring built-in RC oscillators, the S1F76330 series
requiring external crystal oscillators.
S1F76310, S1F76380 Series Built-in CR Oscillator Type
CMOS Switching Regulators
DESCRIPTION
The S1F76310, S1F76380 series of CMOS switching APPLICATIONS
regulators provide input voltage step-up and regulation
to a specified fixed voltage using an external coil. The
devices in these series incorporate precision, low-power
reference voltage generators and transistors for driving
an internal comparator. They feature low power con-
sumption, low operating voltages, voltage detection and
standby operation.
The devices offer a range of fixed output voltages, from
2.0 to 5.0V. The S1F76310 series features battery
backup and power-on clear, the S1F76380 series fea-
tures power-on clear and response compensation, the
S1F76380 series offer an output voltage temperature
characteristic for driving an LCD. They are available in
SOP3-8pin.
• Fixed-voltage power supplies for battery-operated
equipment such as portable video cassette recorders,
video cameras and radios
• Power supplies for pagers, memory cards, calculators
and similar hand-held equipment
• Fixed-voltage power supplies for medical equipment
• Fixed-voltage power supplies for communications
equipment
• Power supplies for microcomputers
• Uninterruptable power supplies
• Power supplies for LCD panel
FEATURES
• 0.9V (Min.) operating voltage
• 10µA (Typ.) maximum current consumption
• Standby operation
• 3µA (Typ.) standby current consumption
• 1.05 ±0.05V high-accuracy voltage detection
• Battery backup (available on S1F76310 series)
• On-chip CR oscillator
• Power-on clear (available on S1F76310 and
S1F76380 series)
• Output voltage temperature characteristic for driving
an LCD (available on S1F76380 series)
• SOP3-8pin
LINEUP
Voltage
(V)
Multiplication
frequency
source
Output voltage
Response
Voltage
detection
Product
Power-on clear Battery backup
temperature
Package
compensation
characteristic
Input
Output
5.0
S1F76310M1A0
S1F76310M1K0
SOP3-8pin
SOP3-8pin
SOP3-8pin
SOP3-8pin
1.5
3.5
On-chip CR
oscillator
Yes
No
No
S1F76310M1B0 (0.9 Min.)
S1F76310M1L0
3.0
Yes
Yes
2.4
S1F76380M1L0
1.5
2.4
On-chip CR
oscillator
– 4.0 mV/˚C SOP3-8pin
– 4.5 mV/˚C SOP3-8pin
No
Yes
S1F76380M1H0 (0.9 Min.)
2.2
S1F70000 Series
Technical Manual
EPSON
4–1
S1F76300 Series
BLOCK DIAGRAMS
S1F76310 Series
V
I2
PWCR
RST
VI1
VSW
Reference
voltage
generator
CR
oscillator
VO
Control
switch
GND
PS
S1F76380 Series
RST
PWCR
VI
V
V
V
SW
–
+
O
Reference
+
–
voltage
Control
switch
CONT
generator
GND
CR
oscillator
PS
4–2
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
PIN ASSIGNMENTS
S1F76310 Series
S1F76380 Series
PWCR
RST
1
2
3
4
8
7
6
5
PS
PWCR
RST
1
2
3
4
8
7
6
5
PS
V
V
V
I
V
V
V
I1
I2
O
S1F76380
series
S1F76310
series
GND
CONT
O
GND
V
SW
VSW
PIN DESCRIPTIONS
S1F76310 Series
Pin No.
Pin name
Description
1
2
3
4
5
6
7
8
PWCR
RST
GND
VSW
VO
Power-on clear. See note 1.
Reset signal output. See note 1.
Ground
External inductor drive
Output votlage
VI2
Backup input voltage
Step-up input voltage
Power save. See note 2.
VI1
PS
Notes
1. See voltage detection and power-on clear in the functional description.
2. See standby mode and battery backup in the functional description.
S1F76380 Series
Pin No.
Pin name
PWCR
RST
Description
1
2
3
4
5
6
7
8
Power-on clear. See note 1.
Reset signal output. See note 1.
Ground
GND
VSW
External inductor drive
Output votlage
VO
VCONT
VI1
Comparator input
Step-up input voltage
Power save. See note 2.
PS
Notes
1. See voltage detection and power-on clear in the functional description.
2. See standby mode and battery backup in the functional description.
S1F70000 Series
Technical Manual
EPSON
4–3
S1F76300 Series
SPECIFICATIONS
Absolute Maximum Ratings
S1F76310 series
VSS = 0V, Ta = 25 ˚C
Parameter
Input voltage
Symbol
VI1
Rating
Unit
V
7
100
7
Output current
IO
mA
V
Output voltage
VO
200 (SOP3)
300 (DIP)
Power dissipation
PD
mW
Operating temperature range
Storage temperature range
Soldering temperature (for 10 s). See note.
Notes
Topr
Tstg
Tsol
–30 to +85
˚C
˚C
˚C
–65 to +150
260
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions. Never use solder dip to
mount S1F70000 series power supply devices.
S1F76380 series
VSS = 0V, Ta = 25 ˚C
Parameter
Symbol
VI1
Rating
Unit
V
Input voltage
Output current
Output voltage
7
100
7
IO
mA
V
VO
200 (SOP3)
300 (DIP)
Power dissipation
PD
mW
Operating temperature range
Topr
Tstg
Tsol
–30 to +85
˚C
˚C
˚C
Storage temperature range
–65 to +150
260
Soldering temperature (for 10 s). See note.
Notes
Temperatures during reflow soldering must remain within the limits set out in LSI Device Precautions. Never use solder dip to
mount S1F70000 series power supply devices.
4–4
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Electrical Characteristics
S1F76310M1L0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
Parameter
Symbol
Condition
Unit
Min.
0.9
0.9
2.32
1.00
—
VI1
VI2
—
—
2.40
1.05
5
1.8
1.8
2.48
1.10
—
V
V
V
Input voltage
VO > VI2
Output voltage
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
VO
Vl1 = 1.5V
VDET
∆VDET
IDDO
IDDS
V
%
µA
µA
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
—
7
3
35
10
VI1 = 1.5V, VO = 2.4V,
VSW = 0.2V
Switching transistor ON resistance
Switching transistor leakage current
Backup switch ON resistance
RSWON
ISWQ
—
—
—
—
7
—
14
0.5
250
0.1
Ω
µA
Ω
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
VI1 = 1.0V, VI2 = 1.5V,
IO = 1.0mA
RBSON
IBSQ
100
—
VI1 = 1.0V, VO = 2.4V,
VI2 = 2.0V
Backup switching leakage current
µA
RST Low-level output current
PS pull-up current
Multiplication clock frequency
IOL
IIH
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
0.05
—
25
0.15
—
35
—
0.5
45
mA
µA
kHz
fCLK
VI1 = 1.5V
S1F76310M1B0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
Parameter
Symbol
Condition
Unit
Min.
VI1
VI2
0.9
—
—
2.0
2.0
3.10
1.10
—
V
V
Input voltage
VO > VI2
0.9
2.90
1.00
—
Output voltage
VO
Vl1 = 1.5V
3.00
1.05
5
V
Detection voltage
VDET
∆VDET
IDDO
IDDS
V
Detection voltage hysteresis ratio
Operating current
%
µA
µA
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
8
40
Standby current
—
3
10
VI1 = 1.5V, VO = 3.0V,
VSW = 0.2V
Switching transistor ON resistance
Switching transistor leakage current
Backup switch ON resistance
RSWON
ISWQ
—
—
—
—
6
12
0.5
160
0.1
Ω
µA
Ω
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
—
70
—
VI1 = 1.0V, VI2 = 2.0V,
IO = 1.0mA
RBSON
IBSQ
VI1 = 1.0V, VO = 3.0V,
VI2 = 2.0V
Backup switching leakage current
µA
RST Low-level output current
PS pull-up current
IOL
IIH
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
0.05
—
0.15
—
—
0.5
50
mA
µA
Multiplication clock frequency
fCLK
VI1 = 1.5V
30
40
kHz
S1F70000 Series
Technical Manual
EPSON
4–5
S1F76300 Series
S1F76310M1K0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
—
—
Parameter
Symbol
Condition
Unit
Min.
0.9
VI1
VI2
2.0
2.0
3.60
1.10
—
V
V
Input voltage
VO > VI2
0.9
Output voltage
VO
Vl1 = 1.5V
3.40
1.00
—
3.50
1.05
5
V
Detection voltage
VDET
∆VDET
IDDO
IDDS
V
Detection voltage hysteresis ratio
Operating current
%
µA
µA
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
8
40
Standby current
—
3
10
VI1 = 1.5V, VO = 3.5V,
VSW = 0.2V
Switching transistor ON resistance
Switching transistor leakage current
Backup switch ON resistance
RSWON
ISWQ
—
—
—
—
6
12
0.5
160
0.1
Ω
µA
Ω
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
—
70
—
VI1 = 1.0V, VI2 = 2.0V,
IO = 1.0mA
RBSON
IBSQ
VI1 = 1.0V, VO = 3.5V,
VI2 = 2.0V
Backup switching leakage current
µA
RST Low-level output current
PS pullup current
IOL
IIH
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
0.05
—
0.15
—
—
0.5
50
mA
µA
Multiplication clock frequency
fCLK
VI1 = 1.5V
30
40
kHz
S1F76310M1A0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
Parameter
Symbol
Condition
Unit
Min.
0.9
0.9
4.80
1.00
—
VI1
VI2
—
—
5.00
1.05
5
2.0
2.0
5.20
1.10
—
V
V
V
Input voltage
VO > VI2
Output voltage
Detection voltage
Detection voltage hysteresis ratio
Operating current
Standby current
VO
Vl1 = 1.5V
VDET
∆VDET
IDDO
IDDS
V
%
µA
µA
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
—
10
3
50
10
VI1 = 1.5V, VO = 5.0V,
VSW = 0.2V
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
Switching transistor ON resistance
Switching transistor leakage current
Backup switch ON resistance
RSWON
ISWQ
—
—
—
—
5
10
0.5
100
0.1
Ω
µA
Ω
—
50
—
VI1 = 1.0V, VI2 = 3.0V,
IO = 1.0mA
RBSON
IBSQ
VI1 = 1.0V, VO = 5.0V,
VI2 = 3.0V
Backup switching leakage current
µA
RST Low-level output current
PS pullup current
Multiplication clock frequency
IOL
IIH
VI1 = 0.9V, VDS = 0.2V
VI1 = 1.5V
0.05
—
35
0.15
—
45
—
0.5
55
mA
µA
kHz
fCLK
VI1 = 1.5V
4–6
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
S1F76380M1H0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
Parameter
Symbol
Condition
Unit
Min.
0.9
Input voltage
VI1
VO
—
2.20
–4.5
1.05
5
2.0
V
V
Output voltage
Vl1 = 1.5V
2.10
2.30
Output voltage temperature gradient
Detection voltage
Kt
–5.5
1.00
—
–3.5 mV/˚C
VDET
∆VDET
IDDO
IDDS
1.10
—
V
Detection voltage hysteresis ratio
Operating current
%
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
7
35
µA
µA
Standby current
—
3
10
VI1 = 1.5V, VO = 2.2V,
VSW = 0.2V
Switching transistor ON resistance
Switching transistor leakage current
RSWON
ISWQ
—
—
7
14
Ω
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
—
0.5
µA
RST Low-level output current
PS pullup current
IOL
IIH
VI1 = 0.9V, VOL = 0.2V
VI1 = 1.5V
0.05
—
0.15
—
—
0.5
45
mA
µA
Multiplication clock frequency
fCLK
VI1 = 1.5V
25
35
kHz
S1F76380M1L0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Rating
Typ. Max.
Parameter
Symbol
Condition
Unit
Min.
Input voltage
VI1
VO
0.9
—
2.40
–4.0
1.05
5
2.0
V
V
Output voltage
Vl1 = 1.5V
2.30
–5.5
1.00
—
2.50
Output voltage temperature gradient
Detection voltage
Kt
–3.5 mV/˚C
VDET
∆VDET
IDDO
IDDS
1.10
—
V
Detection voltage hysteresis ratio
Operating current
%
VI1 = 1.5V, IO = 1.0mA
VI1 = 1.5V
—
7
35
µA
µA
Standby current
—
3
10
VI1 = 1.5V, VO = 2.4V,
VSW = 0.2V
Switching transistor ON resistance
Switching transistor leakage current
RSWON
ISWQ
—
—
7
14
Ω
VI1 = 1.5V, VO = 1.5V,
VSW = 7.0V
—
0.5
µA
RST Low-level output current
PS pullup current
IOL
IIH
VI1 = 0.9V, VOL = 0.2V
VI1 = 1.5V
0.05
—
0.15
—
—
0.5
45
mA
µA
Multiplication clock frequency
fCLK
VI1 = 1.5V
25
35
kHz
S1F70000 Series
Technical Manual
EPSON
4–7
S1F76300 Series
Typical Performance Characteristics
2.0
5
4
3
2
1
0
Ta = 25 ˚C
V
I1 = 1.5 V
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
–30
0
25
50
75 85
Fixed output voltage (V)
Ambient temperature (˚C)
Fixed-output voltage temperature
characteristic
Standby current vs. ambient temperature
1.15
1.10
1.05
1.00
0.95
V
REL
DET
V
–30
0
25
50
75 85
Ambient temperature (˚C)
Detection voltage vs. ambient temperature
S1F76380M1H0 and S1F76380M1L0
60
60
VI1 = 1.5 V
Ta = 25 ˚C
50
40
30
20
10
50
40
30
20
10
–30
0
25
50
85
0.5
1.0
1.5
2.0
2.5
Ambient temperature (˚C)
Input voltage (V)
Clock frequency vs. Input voltage
Clock frequency vs. ambient temperature
4–8
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
2.5
2.0
1.5
2.5
2.0
–30
0
25
50
75 85
–30
0
25
50
75 85
Ambient temperature (˚C)
Ambient temperature (˚C)
Output voltage vs. ambient temperature
(S1F76380M1H0)
Output voltage vs. ambient temperature
(S1F76380M1L0)
S1F76310M1B0, S1F76310M1K0
60
60
Ta = 25 ˚C
V
I1 = 1.5 V
50
40
30
20
10
50
40
30
20
10
0.5
1.0
1.5
2.0
2.5
–30
0
25
50
85
Input voltage (V)
Ambient temperature (˚C)
Clock frequency vs. input voltage
Clock frequency vs. ambient temperature
S1F76310M1A0
60 VI1 = 1.5 V
50
60
Ta = 25 ˚C
50
40
30
20
10
40
30
20
10
–30
0
25
50
85
0.5
1.0
1.5
2.0
2.5
Ambient temperature (˚C)
Input voltage (V)
Clock frequency vs. input voltage
Clock frequency vs. ambient temperature
S1F70000 Series
Technical Manual
EPSON
4–9
S1F76300 Series
Load Characteristics
S1F76310M1A0
10
100
5.5
Ta = 25 ˚C
fCLK = 32 kHz
5.0
Ta = 25 ˚C
CLK = 32 kHz
f
Peff
4.5
VI1 = 1.5 V
VI1 = 1.0 V VI1 = 1.25 V
4.0
3.5
3.0
2.5
50
5
ILmax
0
100
0
0
5
10
200
300
500
1000
Load current (mA)
Inductence (µH)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Capacitor: NEC MSUB20J106M (10µF)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
S1F76310M1B0
4.0
12
10
8
100
50
0
f
CLK = 32.8 kHz
Ta = 25 ˚C
CLK = 32 kHz
f
3.5
3.0
2.5
2.0
1.5
1.0
Peff
6
V
I1 = 1.5 V
I1 = 1.25 V
I1 = 1.0 V
V
ILmax
4
V
2
0
100
200
300
500
1000
0
5
10
15
20
25
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Capacitor: NEC MSUB20J106M (10µF)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
4–10
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
S1F76380M1L0
4.0
15
10
f
CLK = 35 kHz
Ta = 25 ˚C
f
CLK = 40 kHz
3.5
3.0
2.5
2.0
1.5
1.0
100
50
0
ILmax
Peff
VI
= 1.0 V
V = 1.5 V
V = 1.25 V
5
0
100
200
300
500
1000
0
5
10
15
20
25
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Capacitor: NEC MSUB20J106M (10µF)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
S1F76380M1H0
4.0
15
ILmax
f
CLK = 35 kHz
Ta = 25 ˚C
f
CLK = 35kHz
3.5
3.0
2.5
2.0
1.5
1.0
100
50
0
10
Peff
V
I1 = 1.25 V
V
I1 = 1.0 V
VI1 = 1.5 V
5
100
200
300
500
1000
0
5
10
15
20
25
Inductance (µH)
Load current (mA)
Notes
Inductor: TDK NLF453232-221k (220µH)
Diode: Shindengen DINS4 Schottky barrier diode
Notes
1. VI1 = 1.5V
2. Inductor: TDK NLF453232 series
Capacitor: NEC MSUB20J106M (10µF)
Diode: Shindengen DINS4 Schottky barrier diode
Capacitor: NEC MSUB20J106M (10µF)
S1F70000 Series
Technical Manual
EPSON
4–11
S1F76300 Series
Reset delays
S1F76310M1A0
S1F76310M1K0
R = 200 kΩ
200
150
100
50
200
R = 200 kΩ
150
100
50
R = 100 kΩ
R = 100 kΩ
0
0.1
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7 0.8 1.0
0.2
0.3
0.4 0.5 0.6 0.7 0.8 1.0
C (µF)
C (µF)
S1F76310M1B0
S1F76310M1L0 and S1F76380M1L0
200
200
150
100
50
R = 200 kΩ
R = 200 kΩ
150
100
50
R = 100 kΩ
R = 100 kΩ
0
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7 0.8 1.0
0.1
0.2
0.3
0.4 0.5 0.6 0.7 0.8 1.0
C (µF)
C (µF)
S1F76380M1H0
200
150
100
50
R = 200 kΩ
R = 100 kΩ
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7 0.8 1.0
C (µF)
4–12
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Timing diagram
Measurement circuit
V
O
VO
V
I1
R
C
100 kΩ
PWCR
RST
PWCR
RST
t
pd
PACKAGE MARKINGS
S1F76310, S1F76380 series device packages use the
following markings.
Series number
7 6 3 1
First subcode character
Second subcode character
Code number
FUNCTIONAL DESCRIPTIONS
Internal Circuits
CR oscillator
Basic Voltage Booster Operation
Tr1 switches ON and OFF at half the frequency of the
clock pulses from the built-in RC oscillator. When the
transistor is ON, the circuit stores energy in L. When it
is off, this energy flows through D to change C.
The S1F76310, S1F76380 series use a built-in CR os-
cillator to drive the voltage booster circuit. The circuit
is supplied by VI1. All circuit components are on-chip
and thus the drive frequency is set internally. To ensure
50% duty, this frequency is twice that used by the volt-
age booster circuit.
L
D
V
I1
VO
When PS is Low, the oscillator is disabled and the chip
is in standby mode.
Tr1
C
PS
GND
GND
C
R
S1F70000 Series
Technical Manual
EPSON
4–13
S1F76300 Series
Reference voltage generator and output
voltage regulator
The reference voltage generator regulates VI1 to gener-
ate a votlage for the voltage regulator and voltage detec-
tion circuits.
S1F76310M
V
V
O
O
Voltage
detector
R2
RST
Tr2
V
O
The voltage regulator regulates the boosted output
votlage. This is determined by the level at point A be-
tween the two resistors connecting VO and GND. These
series use an on-chip resistor to set the output at a speci-
fied voltage.
V
I1
R1
C1
PWCR
–
+
Tr1
Reference
voltage
generator
Output
voltage regulator
VI1
VO returns to its normal value when the voltage of
PWCR increases and Tr2 turns OFF, so that RST re-
turns to VO after a delay specified by the time coeffi-
cient of R1 and C1. Thus, after normal output has been
obtained, a reset pulse of adjustable width can be ob-
tained which can reset a system connected to RST.
The output from RST is an N-channel, open-drain.
When VI1 exceeds VDET, the drain is opened and, when
VI1 drops below VDET again, the output transistor con-
ducts and the output is grounded. The characteristic re-
sponse is shown in the following figure.
V
SW
O
CR
oscillator
V
A
+
–
GND
Note
In step-up voltage operation, the ripple voltage created
by the switching operation is large relative to the output
voltage described above. This ripple voltage is affected
by external components and load conditions. The user
is advised to check this voltage carefully.
V
REL
V
I1
V
DET
O
V
PWCR
RST
V
GND
O
V
Voltage detection
The S1F76310, S1F76380 series are equipped with a
built-in voltage detection function. The detection volt-
age, VDET, is fixed internally at 1.05 ± 0.05V.
V
GND
Disabling power-on clear
Always connect PWCR to either VO or GND. If volt-
age detection only is required, remove the resistor be-
tween PWCR and VO and monitor the level at RST. If
neither function is required, connect PWCR to GND.
Leaving PWCR unconnected results in an undefined in-
verter gate voltage in the VO circuit, causing transient
currents to flow between VO and GND.
Power-on clear function
The S1F76310 series and S1F76380 series are equipped
with a built-in power-on clear function. As shown in
the following figure, R1 and C1 are connected to
PWCR, and R2 is connected to RST to operate the func-
tion. If VI1 drops below VDET, Tr1 and Tr2 conduct and
PWCR and RST are grounded. If VI1 recovers and rises
higher than VREL, Tr1 turns OFF. The detection volt-
age hysteresis is 5% (Typ.) and VREL is VDET × 1.05
(Typ.).
4–14
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
VO circuit
In standby mode, the booster, including the crystal os-
cillator, is disabled (the switching transistor used to
drive the inductor is turned OFF) and the built-in
backup switch is turned ON, so that the input voltage at
VI2 is output at VO. This enables the battery backup
function. PS is pulled-up internally, so when standby
mode is not required, the pin should be left open.
PWCR
VI1 circuit
VI1
RST
–
+
Powering up
Ensure that VO is at least the minimum operating volt-
age (0.9V) before switching on the booster circuit.
One way to do this is to attach a battery so that VO never
drops below the minimum required for backup mode. If
no such external power supply is available, connect VI2
to VI1 and hold PS Low when applying power for the
first time.
Output voltage response compensation
The S1F76380 series are provided with a response com-
pensation input. A response compensation capacitor is
connected between VCONT and VO, allowing the ripple
voltage generated by the boosted output voltage to be
suppressed to a minimum.
V
I2
Battery
PS
S1F76310M
C
Standby mode and battery backup
The S1F76310 series are equipped with a standby
mode, initiated by connecting PS to GND.
TYPICAL APPLICATIONS
Example Circuits
The output current, IO, and power conversion effi-
ciency, Peff of a particular device in a series depends on
factors such as the switching frequency, type of coil,
and the size and type of other external components.
S1F76310 series
S1F76380 series
L
D
L
D
VSW
VSW
V
O
V
I1
V
O
V
V
I1
I2
S1F76380M/C
S1F76310M/C
GND
GND
PWCR
R1
V
CONT
C1
C1
PWCRPS RST
PS RST
S1F70000 Series
Technical Manual
EPSON
4–15
S1F76300 Series
Notes
Inductor
■100µH ≤ L ≤ 1mH, C ≤ 10µF, D = Schottky diode
■S1F76310M1A0
Use an inductor with low direct-current resistance and
low losses.
• Peff = 70% when L = 220µH (leadless inductor),
VI1 = 1.5V, fCLK = 32kHz, IO = 4mA
• Peff = 75% when L = 220µH (drum coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 6mA
• Peff = 80% when L = 300µH (toroidal coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 7mA
■S1F76310M1B0
• Peff = 70% when L = 220µH (leadless inductor),
VI1 = 1.5V, fCLK = 32kHz, IO = 8mA
• Peff = 75% when L = 220µH (drum coil),
VI1 =1.5V, fCLK = 32kHz, IO = 9mA
• Peff = 80% when L = 300µH (toroidal coil),
VI1 = 1.5V, fCLK = 32kHz, IO = 10mA
Leadless
Pre-wound, leadless inductors using surface-mount
technology are the most suitable for portable equipment
and other space-critical applications.
Drum coil
Avoid using drum coils because their magnetic field
can induce noise.
Toroidal coil
Use a toroidal coil to virtually eliminate magnetic field
leakage, reduce losses and improve performance.
External components
Diode
The performance characteristics of switching regulators
depend greatly on the choice of external components.
Observing the following guidelines will ensure high
performance and maximum efficiency.
Use a Schottky barrier diode with a high switching
speed and low forward voltage drop, VF.
Capacitor
To minimize ripple voltages, use a capacitor with a
small equivalent direct-current resistance for smooth-
ing.
4–16
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Sample External Components
Leadless Inductors
TDK NKF453232 series magnetically shielded leadless inductors
Device
frequency
(MHz-Min.)
13
Inductance
H)
LQ frequency
(MHz)
DC resistance Rated current
Device
Qmin
(
µ
(Ω-Max.)
(mA-Max.)
NLF453232-390K
NLF453232-470K
NLF453232-560K
NLF453232-680K
NLF453232-820K
39.0 ±10%
47.0 ±10%
56.0 ±10%
68.0 ±10%
82.0 ±10%
50
50
50
50
50
50
50
50
40
40
40
40
40
40
40
40
40
40
2.52
2.52
1.89
2.10
2.34
2.60
2.86
3.25
3.64
4.16
5.72
6.30
6.90
7.54
8.20
9.20
10.50
12.00
13.50
16.00
44
41
39
36
34
32
30
28
26
24
23
23
21
19
18
17
16
15
12
11
10
10
9
2.52
2.52
2.52
NLF453232-101K 100.0 ±10%
NLF453232-121K 120.0 ±10%
NLF453232-151K 150.0 ±10%
NLF453232-181K 180.0 ±10%
NLF453232-221K 220.0 ±10%
NLF453232-271K 270.0 ±10%
NLF453232-331K 330.0 ±10%
NLF453232-391K 390.0 ±10%
NLF453232-471K 470.0 ±10%
NLF453232-561K 560.0 ±10%
NLF453232-681K 680.0 ±10%
NLF453232-821K 820.0 ±10%
NLF453232-102K 1000.0 ±10%
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.796
0.252
8
7
6
5.5
5
4.5
4
3.8
3.6
3.4
3
2.5
Characteristic response
Measurement circuit
1000
20,000 µF
820 µH
390 µH
500
A
5H
150 µH
YHP4255A
universal bridge
100
DC
supply
Lx
50
33 µH
10
10 µH
5
4.7 µH
1
1.0 µH
10
50
100
500
1000
DC current (mA)
S1F70000 Series
Technical Manual
EPSON
4–17
S1F76300 Series
Drum coil inductors
Taiyo Yuuden FL series micro-inductors
Device
FL3H
FL4H
FL5H
FL7H
FL9H
FL11H
Inductance
0.22µH to 10µH
0.47µH to 12µH
10µH to 1mH
Direct current (mA)
280 to 670
300 to 680
50 to 320
680µH to 8.2mH
330µH to 33mH
10mH to 150mH
50 to 170
50 to 500
35 to 110
Toroidal coil inductors
Tohoku Metal Industries HP series toroidal coil inductors
Inductance (µH) at 20kHz, 5V
Rated current IDC
(A)
Diameter × height Wire gauge
Device
(mm-Max.)
(mmø)
IDC = 0
200
65
IDC = rating
160
55
HP011
HP021
HP031
HP012
HP022
HP032
HP052
HP013
HP023
HP033
HP055
HP034S
HP054S
HP104S
HP024
HP034
HP054
HP104
HP035
HP055
HP105
HP205
1
2
0.5
0.7
φ 20 × 12
3
30
23
0.8
1
600
180
120
45
450
135
80
0.5
2
0.7
φ 22 × 13
3
0.8
5
30
1.0
1
1000
500
130
90
800
330
100
55
0.5
2
0.7
φ 26 × 14
φ 36 × 18
φ 36 × 21
3
0.8
5
1.0
3
400
350
50
250
160
30
0.8
5
1.0
10
2
1.6
1500
300
210
45
950
230
140
30
0.7
3
0.8
3
1.0
10
3
1.6
700
600
180
20
500
330
95
0.5
5
1.0
φ 43 × 23
10
20
1.6
14
1.8 × 2 P
4–18
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Diodes
Shindengen DINS4 Schottky barrier diodes
Rating
Min. Typ. Max.
Parameter
Forward voltage
Symbol
Condition
IF = 1.1A,
Unit
V
VF
IR
—
—
—
—
0.55
1
pulse measurement
VR = VRM,
pulse measurement
Reverse current
mA
Junction-to-lead thermal resistance
θjl
—
—
—
—
23
˚C/W
˚C/W
Junction-to-ambient thermal resistance
θja
157
Characteristics
5
Tp = 25 ˚C (Typ.)
Tp = 125 ˚C (Typ.)
2
Tp = 25 ˚C (Max.)
Tp =125 ˚C (Max.)
1
0.5
0.2
0.1
0.05
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Forward voltage (V)
Smoothing capacitors
NEC MSV series capacitors
Tan δ
+25, +85 +125
Package
Rated Static capacitance
Leakage
current (µA)
Device
type
–55
˚C
voltage (V)
(µF)
˚C
˚C
MSVAOJ475M
MSVB2OJ106M
MSVB2OJ156M
MSVBOJ156M
MSVCOJ336M
MSVD2OJ686M
MSVDOJ686M
Note
A
B2
B2
B
6.3
6.3
6.3
6.3
6.3
6.3
6.3
4.7
10
15
15
33
68
68
0.08
0.08
0.08
0.08
0.08
0.08
0.08
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.5
0.6
0.9
0.9
2.0
4.2
4.2
C
D2
D
The figures on the previous pages show data from the documents of various manufactures. For further details,
please contact the relevant manufacture.
S1F70000 Series
Technical Manual
EPSON
4–19
S1F76300 Series
Other Applications
Voltage booster
Combining an S1F76310 switching regulator with an
S1F76610C/M DC/DC converter and voltage regulator
creates the voltage booster circuit shown in the follow-
ing figure.
L
D
1
2
3
4
5
6
7
14
13
12
11
10
9
+
+
C1
V
SW
10 µF
R
1 MΩ
OSC
V
O
V
I1
I2
C2
10 µF
P
OFF
V
S1F76610C/M
S1F76310M
GND
C1
VO = – 15V
8
PS
PWCR
VI = –5 V
C3
10µF
S1F76310M1A0. The input voltage still reaches the
S1F76610C/M through L and D.
Potential levels are shown in the following figure.
V
I
= 1.5 V
S1F76310M1A0
(5 V)
S1F76610C/M
PS
GND = 0 V
Boost
ON
Boost
OFF
VO
V
DD (5 V)
VI
(1.5 V)
VI = 5 V
GND (0 V)
VDD (0 V)
P
OFF
GND = 0 V
Boost
ON
Boost
OFF
VO (–10 V)
Although the circuit appears to have two ON/OFF con-
trol points, PS on the S1F76310M1A0 and POFF on the
S1F76610C/M, PS only shuts down the
4–20
EPSON
S1F70000 Series
Technical Manual
S1F76300 Series
Output voltage adjustment
To ensure stable output, any circuit that adjusts the out-
put voltage must contain C1, RA and RB. To stop
switching current from affecting VO, the circuit must
also satisfy the condition IO < IR.
The following figure summarizes the relevant circuits
inside an S1F76300 series chip.
VO is connected to the level shift and buffer circuit,
which provide the gate bias for the switching transistor
driving the inductor. The current drain, IO1, varies with
the load and is typically 10µA. The current, IO2,
through the internal resistors R1 and R2, is typically
1µA.
Step-up
voltage
output
RA
VSW
V
I
I
O
V
I
VO
I
I
O1
O2
I
O
I
R
V
SW
VO
R1
CL
S1F76310M
Comparatpr
GND
Level
shifter
Controller
RB
C
Buffer
R2
VREF
(I
O
< IR)
Voltage adjustment
circuit
S1F70000 Series
Technical Manual
EPSON
4–21
相关型号：
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