2N6845LCC4 [SEME-LAB]

P–CHANNEL POWER MOSFET; P沟道功率MOSFET

2N6845LCC4


型号：	2N6845LCC4
厂家：	SEME LAB
描述：	P–CHANNEL POWER MOSFET P沟道功率MOSFET 晶体晶体管脉冲
文件：	总2页 (文件大小：23K)
下载：	下载PDF数据表文档文件

2N6846

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-205AF

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22 ETC

2N6847

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 2.5A I(D) | TO-205AF

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44 ETC

2N6847

P-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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53 SEME-LAB

2N6847EBPBF

Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6847EDPBF

Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6847EPBF

Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

2N6848

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5.5A I(D) | TO-205AF

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14 ETC

2N6849

P.CHANNEL POWER MOSFETs

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224 SEME-LAB

2N6849

P-CHANNEL MOSFET

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159 MICROSEMI

2N6849

P-CHANNEL POWER MOSFET

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107 SEME-LAB

2N6849

P-CHANNEL MOSFET

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67 MICROSEMI

2N6849

P-CHANNEL ENHANCEMENT MOSFET

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91 NJSEMI

2N6849_09

P-CHANNEL MOSFET

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11 MICROSEMI

2N6849EA

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 IRF

2N6849EB

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

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