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2N6849 [SEME-LAB]

P.CHANNEL POWER MOSFETs; P.CHANNEL功率MOSFET

2N6849


元器件型号：	2N6849
生产厂家：	SEME LAB
描述和应用：	P.CHANNEL POWER MOSFETs P.CHANNEL功率MOSFET
PDF文件：	总2页 (文件大小：28K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6849参数

2N6849_09

P-CHANNEL MOSFET

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11 MICROSEMI

2N6849EA

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 IRF

2N6849EB

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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0 IRF

2N6849HP

P-CHANNEL POWER MOSFET

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15 SEME-LAB

2N6849U

P-CHANNEL MOSFET

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18 MICROSEMI

2N6849U

P-Channel

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50 ETC

2N684A

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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17 CENTRAL

2N684A

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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19 CENTRAL

2N684LEADFREE

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-48, TO-48, 2 PIN

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0 CENTRAL

2N684LEADFREE

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-48, TO-48, 2 PIN

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0 CENTRAL

2N684MPBF

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA

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0 VISHAY

2N684MPBF

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA

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0 VISHAY

2N684PBF

Silicon Controlled Rectifier, 25A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-208AA

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0 IRF

2N684PBFREE

Silicon Controlled Rectifier,

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0 CENTRAL

2N685

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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6 CENTRAL

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