SML20W65 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML20W65 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML20W65
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
200V
65A
ID(cont)
Ω
RDS(on) 0.026
• Faster Switching
• Lower Leakage
• TO–267 Hermetic Package
D
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
G
S
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
200
65
V
A
A
V
DSS
3
Continuous Drain Current
I
I
D
1 3
Pulsed Drain Current
260
DM
Gate – Source Voltage
±30
V
V
GS
V
Gate – Source Voltage Transient
±40
GSM
Total Power Dissipation @ T
Derate Linearly
= 25°C
400
W
case
P
D
3.2
W/°C
Operating and Storage Junction Temperature Range
–55 to 150
300
T , T
J
STG
°C
A
Lead Temperature : 0.063” from Case for 10 Sec.
T
L
1 3
Avalanche Current
(Repetitive and Non-Repetitive)
65
I
AR
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
E
E
AR
AS
mJ
2
2500
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T = 25°C, L = 1.18mH, R = 25Ω, Peak I = 65A
J
G
L
3) Maximum current limited by package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
SML20W65
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
V
V
V
= 0V , I = 250µA
200
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
D
= V
65
DSS
µA
DSS
(V
= 0V)
= 0.8V
, T = 125°C
250
GS
DSS
C
I
Gate – Source Leakage Current
Gate Threshold Voltage
= ±30V , V
= 0V
±100 nA
GSS
DS
V
= V
> I
, I = 2.5mA
D
2
4
V
A
Ω
GS(TH)
GS
x R
Max
D(ON)
DS(ON)
2 4
I
On State Drain Current
65
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
0.026
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
Input Capacitance
V
V
= 0V
8500 10200
iss
GS
DS
Output Capacitance
= 25V
1950 2730 pF
oss
rss
Reverse Transfer Capacitance
f = 1MHz
560
290
66
840
435
100
180
32
3
Q
Q
Q
t
Total Gate Charge
V
V
= 10V
g
GS
DD
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
nC
ns
gs
gd
DSS
I = I [Cont.] @ 25°C
120
16
D
D
V
= 15V
d(on)
GS
DD
t
t
t
V
= 0.5 V
25
50
r
DSS
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
48
72
d(off)
f
D
D
R
= 0.6Ω
5
10
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
4
I
I
(Body Diode)
65
A
260
Continuous Source Current
S
1 4
(Body Diode)
Pulsed Source Current
SM
2
V
t
V
= 0V , I = – I [Cont.]
1.7
V
Diode Forward Voltage
SD
GS
S
D
I = – I [Cont.] , dl / dt = 100A/µs
330
5.8
ns
µC
Reverse Recovery Time
Reverse Recovery Charge
rr
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/µs
S D s
rr
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
0.31
°C/W
40
θJC
Junction to Ambient
θJA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
4) Maximum current limited by package.
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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