STP5508 [SEME-LAB]
HIGH POWER NPN SILICON TRANSISTOR; 高功率NPN硅晶体管
| 型号： | STP5508 |
| 厂家： | 
SEME LAB |
| 描述： | HIGH POWER NPN SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIGH POWER NPN SILICON
TRANSISTOR
STP5508
•
•
•
Hermetic Metal TO3 Package.
High Current
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
140V
CBO
CEO
EB
120V
6V
50A
C
I
100A
CM
I
20A
B
P
T = 25°C
C
Total Power Dissipation at
250W
D
Derate Above 25°C
1.43W/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Case
0.7
°C/W
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8758
Issue 1
Page 1 of 3
Website: http://www.semelab-tt.com
HIGH POWER NPN SILICON
TRANSISTOR
STP5508
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
V
I
= 10mA
= 60V
120
V
(BR)CEO
C
I
V
V
I = 0
B
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
CEO
CE
µA
= 140V
V
= 1.5V
10
CE
BE(off)
I
CEX
T
I
= 150 °C
1.0
100
1.0
3
mA
C
I
V
I
= 6V
= 0
µA
EBO
EB
C
= 20A
I = 2.0A
B
C
(1)
Collector-Emitter Saturation
Voltage
V
CE(sat)
I
I
I
I
I
I
I
= 50A
= 20A
= 50A
= 20A
= 1.0A
= 20A
= 50A
I = 10A
B
C
C
C
C
C
C
C
I = 2.0A
B
V
1.8
3.5
1.8
(1)
Base-Emitter Saturation
Voltage
V
BE(sat)
I = 10A
B
(1)
V
V
V
V
V
= 4V
= 4V
= 4V
= 4V
Base-Emitter On Voltage
BE(on)
CE
CE
CE
CE
50
50
10
(1)
Forward-current transfer
ratio
h
-
120
FE
DYNAMIC CHARACTERISTICS
Magnitude of common
emitter small-signal short-
circuit forward current
transfer ratio
I
= 1.0A
C
f = 10MHz
V
= 10V
h
1
-
CE
fe
V
= 10V
I = 0
E
CB
C
Output Capacitance
600
pF
obo
f = 1.0MHz
t
r
Rise Time
0.35
1.1
V
I
= 80V
CC
= 20A
t
Storage Time
Fall Time
µS
C
s
f
I
= I = 2A
B2
B1
t
0.25
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8758
Issue 1
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
HIGH POWER NPN SILICON
TRANSISTOR
STP5508
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO-204AE)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8758
Issue 1
Page 3 of 3
Website: http://www.semelab-tt.com
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