SEMIX202GB066HDS_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块型号: | SEMIX202GB066HDS_07 |
厂家: | SEMIKRON INTERNATIONAL |
描述: | Trench IGBT Modules |
文件: | 总5页 (文件大小:990K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMiX 202GB066HDs
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ꢏ '()ꢕ2 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
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6
6
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SEMiX 2s
Inverse Diode
Trench IGBT Modules
$
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SEMiX 202GB066HDs
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Preliminary Data
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Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
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ꢏ '()ꢕ2 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔ/ꢖꢗꢑꢎꢘ
ꢔ/ꢖ ꢏ ꢔꢕꢖ2 $ꢕ ꢏ :2' ꢃ6
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Typical Applications
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ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
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Remarks
ꢋ- ꢏ &(.)ꢕ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
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ꢔꢕꢖꢗꢈꢐꢑꢘ
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GB
1
16-04-2007 SCH
© by SEMIKRON
SEMiX 202GB066HDs
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ? ꢏ ꢔꢖꢕ
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Trench IGBT Modules
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Module
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SEMiX 202GB066HDs
#
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Preliminary Data
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Features
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Temperature sensor
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ꢕꢖꢗꢈꢐꢑꢘ
F&..H&'(
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
Typical Applications
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
ꢀ
ꢋ ꢏ&'()ꢕ ꢃꢐ"*
ꢕ
+ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ,ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
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ꢂꢌ ꢋ ꢏ&(.)ꢕ
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ꢇꢈꢅ ꢂ ꢈꢂ ꢑ #/ ꢆꢅꢍꢅꢈꢈꢐꢌꢓ
ꢑꢐ0ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ1ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ%
,ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ%ꢇꢍꢑꢐꢆꢍꢅ
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GB
2
16-04-2007 SCH
© by SEMIKRON
SEMiX 202GB066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
16-04-2007 SCH
© by SEMIKRON
SEMiX 202GB066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
16-04-2007 SCH
© by SEMIKRON
SEMiX 202GB066HDs
ꢕꢐꢈꢅ ꢉꢖ!ꢊQ 'ꢈ
+ꢊꢆꢂꢇꢑ
/F
5
16-04-2007 SCH
© by SEMIKRON
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