概述
规格参数
数据手册SEMIX303GD12E4C 概述
Trench IGBT Modules 沟道IGBT模块 IGBT
SEMIX303GD12E4C 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | FLANGE MOUNT, R-XUFM-X17 | 针数： | 29 |
| Reach Compliance Code： | compliant | 风险等级： | 5.69 |
| 其他特性： | UL RECOGNIZED | 外壳连接： | ISOLATED |
| 最大集电极电流 (IC)： | 466 A | 集电极-发射极最大电压： | 1200 V |
| 配置： | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 门极-发射极最大电压： | 20 V |
| JESD-30 代码： | R-XUFM-X17 | 元件数量： | 6 |
| 端子数量： | 17 | 最高工作温度： | 175 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 认证状态： | Not Qualified |
| 子类别： | Insulated Gate BIP Transistors | 表面贴装： | NO |
| 端子形式： | UNSPECIFIED | 端子位置： | UPPER |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | POWER CONTROL |
| 晶体管元件材料： | SILICON | 标称断开时间 (toff)： | 648 ns |
| 标称接通时间 (ton)： | 273 ns | VCEsat-Max： | 2.05 V |
| Base Number Matches： | 1 |
SEMIX303GD12E4C 数据手册
通过下载SEMIX303GD12E4C数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SEMiX303GD12E4c
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
466
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
359
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
-20 ... 20
SEMiX® 33c
Trench IGBT Modules
SEMiX303GD12E4c
Features
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
338
252
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1485
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
IC = 100 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
• Product reliability results are valid for
Tj=150°C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 11.4 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.5
1.22
1.03
1695
2.50
213
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
VCC = 600 V
IC = 300 A
60
ns
Eon
td(off)
tf
29.4
535
mJ
ns
RG on = 1.8 Ω
R
G off = 1.8 Ω
113
ns
di/dton = 4840 A/µs
di/dtoff = 2980 A/µs
Eoff
Rth(j-c)
41.8
mJ
K/W
per IGBT
0.095
GD
© by SEMIKRON
Rev. 4 – 16.12.2009
1
SEMiX303GD12E4c
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
2.2
2.2
2.52
2.5
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.7
3.5
1.3
0.9
3.0
4.2
300
50
1.5
1.1
3.4
4.6
V
V
mΩ
mΩ
A
SEMiX® 33c
Trench IGBT Modules
SEMiX303GD12E4c
Features
IF = 300 A
di/dtoff = 5200 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
22.9
mJ
Rth(j-c)
per diode
0.18
K/W
Module
LCE
20
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.014
• Homogeneous Si
to heat sink (M5)
3
5
5
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
to terminals (M6)
Mt
2.5
w
900
Temperatur Sensor
Typical Applications*
• AC inverter drives
• UPS
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
GD
2
Rev. 4 – 16.12.2009
© by SEMIKRON
SEMiX303GD12E4c
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 4 – 16.12.2009
3
SEMiX303GD12E4c
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4 – 16.12.2009
© by SEMIKRON
SEMiX303GD12E4c
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 4 – 16.12.2009
5
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