SEMIX353GD176HDC_09 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX353GD176HDC_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX353GD176HDc
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1700
353
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 150 °C
251
ICnom
ICRM
VGES
225
ICRM = 2xICnom
450
-20 ... 20
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD176HDc
Features
VCC = 1000 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-55 ... 150
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
428
289
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
225
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
450
A
1800
A
• Homogeneous Si
-40 ... 150
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
• UL recognised file no. E63532
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 225 A
VCE(sat)
Tj = 25 °C
2
2.45
2.9
V
V
V
GE = 15 V
Tj = 125 °C
2.45
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
5.6
8.0
6.4
0.3
V
V
0.9
4.4
6.9
5.8
0.1
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 9 mA
VGE = 0 V
5.2
Tj = 25 °C
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
mA
mA
nF
nF
nF
nC
Ω
V
CE = 1700 V
Cies
Coes
Cres
QG
19.9
0.83
0.66
2100
2.83
250
75
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
VCC = 1200 V
IC = 225 A
ns
Eon
td(off)
tf
155
930
180
85
mJ
ns
RG on = 5.6 Ω
R
G off = 5.6 Ω
ns
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.086
GD
© by SEMIKRON
Rev. 10 – 16.12.2009
1
SEMiX353GD176HDc
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 225 A
VF = VEC
Tj = 25 °C
1.6
1.5
1.75
1.7
V
V
V
GE = 0 V
Tj = 125 °C
chip
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
0.9
0.7
2.0
2.7
1.1
0.9
2.0
2.7
280
83
1.3
1.1
2.0
2.7
V
V
mΩ
mΩ
A
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD176HDc
Features
IF = 225 A
di/dtoff = 4000 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 1200 V
Tj = 125 °C
Err
45
mJ
Rth(j-c)
per diode
0.13
K/W
Module
LCE
20
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.014
• Homogeneous Si
to heat sink (M5)
3
5
5
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
to terminals (M6)
Mt
2.5
• UL recognised file no. E63532
w
900
Typical Applications*
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
• AC inverter drives
• UPS
• Electronic welders
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GD
2
Rev. 10 – 16.12.2009
© by SEMIKRON
SEMiX353GD176HDc
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 10 – 16.12.2009
3
SEMiX353GD176HDc
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 10 – 16.12.2009
© by SEMIKRON
SEMiX353GD176HDc
SEMiX 33c
pinout
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
© by SEMIKRON
Rev. 10 – 16.12.2009
5
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