SEMIX452GB176HDS_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块型号: | SEMIX452GB176HDS_07 |
厂家: | SEMIKRON INTERNATIONAL |
描述: | Trench IGBT Modules |
文件: | 总5页 (文件大小:1022K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMiX 452GB176HDs
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Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
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12*
ꢔ
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0ꢕ
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0ꢕ45
ꢔ8ꢖꢉ
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9 )(
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ꢔ
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ꢔꢕꢕ ꢏ ')(( ꢔ: ꢔ8ꢖ ; )( ꢔ: ꢋ- ꢏ ')* +ꢕ
ꢔꢕꢖꢉ < '/(( ꢔ
=ꢈ
SEMiX 2s
Inverse Diode
Trench IGBT Modules
0>
ꢋ- ꢏ '*( +ꢕ
ꢋꢍ ꢏ )* +ꢕ
ꢋꢍ ꢏ 3( +ꢕ
23*
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SEMiX 452GB176HDs
ꢑꢚ ꢏ '( ꢃꢈ: ꢈꢊꢆ?
ꢋ- ꢏ )* +ꢕ
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Module
0ꢑꢗ45ꢉꢘ
7((
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+ꢕ
+ꢕ
ꢔ
Preliminary Data
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ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
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Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
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ꢀ
ꢀ
ꢋ
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Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
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Typical Applications
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ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ )* +ꢕ
ꢋ- ꢏ ')* +ꢕ
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(,B
2,2
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','
1,)
7
ꢔ
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ꢔ
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
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ꢔꢕꢖꢗꢈꢐꢑꢘ
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ꢕꢕ
),1*
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ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
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ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
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/*
ꢆꢈ
ꢆꢈ
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ꢆꢈ
ꢆꢈ
48ꢂꢆ ꢏ 1 C
48ꢂ ꢏ 1 C
ꢔꢕꢕ ꢏ ')((ꢔ
0ꢕꢆꢂꢃꢏ 2(("
ꢋ- ꢏ ')* +ꢕ
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B((
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4ꢑꢎꢗ-@ꢍꢘ
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HIJ
GB
1
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Characteristics
Symbol Conditions
min.
typ.
',/
max. Units
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0>ꢆꢂꢃ ꢏ 2(( ": ꢔ8ꢖ ꢏ ( ꢔ
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ꢋ- ꢏ )* +ꢕ
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',B
',2
','
ꢔ
',/
','
(,B
)
ꢔ
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ꢔ
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ )* +ꢕ
ꢔ
ꢌ>
ꢃC
ꢃC
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ ')* +ꢕ
),/
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27(
3*
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=ꢕ
SEMiX 2s
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ꢚꢅꢌ #ꢊꢂ#ꢅ
17
ꢃF
4ꢑꢎꢗ-@ꢍꢘK
(,'*
HIJ
Trench IGBT Modules
Module
Lꢕꢖ
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(,/
'
ꢆꢁ
ꢃC
ꢃC
4ꢕꢕMAꢖꢖM
ꢌꢅꢈ?, ꢑꢅꢌꢃꢊꢆꢐꢒ@ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ )* +ꢕ
ꢋꢍꢐꢈꢅꢏ ')* +ꢕ
SEMiX 452GB176HDs
4ꢑꢎꢗꢍ@ꢈꢘ
5ꢈ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
(,(1*
HIJ
Oꢃ
Oꢃ
ꢄ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆN 5*
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 57
2
*
*
Preliminary Data
5ꢑ
),*
ꢙ
)*(
Features
Temperature sensor
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
4'((
ꢋꢍꢏ'((+ꢕ ꢗ4)*ꢏ* NCꢘ
4ꢗꢋꢘꢏ4'((ꢅ6ꢚQG'((I')*ꢗ'Iꢋ@'Iꢋ'((ꢘR:
ꢋQHR: G
(,1B29*P
2**(9)P
NC
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ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
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ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
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This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
ꢀ
ꢔ
ꢏ'(((ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
ꢏ')((ꢔ
ꢔ
ꢕꢕ
GB
2
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
ꢕꢐꢈꢅ ꢉꢖ5ꢊS )ꢈ
%ꢊꢆꢂꢇꢑ
8G
5
17-04-2007 SCH
© by SEMIKRON
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