SEMIX603GAL066HDS [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX603GAL066HDS |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX603GAL066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
720
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
541
ICnom
600
ICRM
ICRM = 2xICnom
1200
-20 ... 20
VGES
SEMiX® 3s
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
tpsc
6
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
SEMiX603GAL066HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
771
562
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
1800
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
771
562
A
A
Tj = 175 °C
• UL recognised file no. E63532
IFnom
600
A
Typical Applications*
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
1800
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 600 A
VCE(sat)
Tj = 25 °C
1.45
1.7
1.85
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
0.9
1
V
V
0.9
1.4
2.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
1.4
VGE(th)
ICES
VGE=VCE, IC = 9.6 mA
Tj = 25 °C
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
37.0
2.31
1.10
4800
0.67
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 17 – 16.12.2009
1
SEMiX603GAL066HDs
Characteristics
Symbol Conditions
min.
typ.
150
145
12
max.
Unit
ns
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
td(on)
tr
VCC = 300 V
IC = 600 A
ns
Eon
td(off)
tf
mJ
ns
RG on = 3 Ω
1050
105
43
R
G off = 3 Ω
ns
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.087
SEMiX® 3s
Inverse diode
IF = 600 A
GE = 0 V
Tj = 25 °C
VF = VEC
1.4
1.4
1.60
1.6
V
V
V
Tj = 150 °C
chip
Trench IGBT Modules
SEMiX603GAL066HDs
Features
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.5
1
1.1
0.95
0.8
V
V
0.85
0.7
0.9
350
63
mΩ
mΩ
A
0.8
1.1
IF = 600 A
di/dtoff = 3800 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
• Homogeneous Si
Tj = 150 °C
Err
13
mJ
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Rth(j-c)
per diode
0.11
K/W
Freewheeling diode
• UL recognised file no. E63532
IF = 600 A
VF = VEC
Tj = 25 °C
1.4
1.4
1.6
1.6
V
V
V
GE = 0 V
Typical Applications*
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.5
1
1.1
0.95
0.8
V
V
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
0.85
0.7
0.9
350
63
mΩ
mΩ
A
0.8
1.1
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
IF = 600 A
di/dtoff = 3800 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
13
mJ
Rth(j-c)
per diode
0.11
K/W
Module
LCE
• Take care of over-voltage caused by
stray inductance
20
0.7
1
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
Rth(c-s)
Ms
per module
0.04
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
300
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 17 – 16.12.2009
© by SEMIKRON
SEMiX603GAL066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 17 – 16.12.2009
3
SEMiX603GAL066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 17 – 16.12.2009
© by SEMIKRON
SEMiX603GAL066HDs
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 17 – 16.12.2009
5
SEMiX603GAL066HDs
This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery,
performance or suitability.
6
Rev. 17 – 16.12.2009
© by SEMIKRON
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