SK100GB12T4T [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK100GB12T4T |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：841K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK100GB12T4T
ꢐ ' )* +ꢗ& ꢊꢂꢏꢃꢄꢄ ꢉꢋꢑꢃꢆꢇꢌꢄꢃ ꢄ#ꢃꢅꢌ,ꢌꢃꢎ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
$
ꢐ. ' )* +ꢗ
0)11
011
31
$
ꢘ
ꢘ
ꢗ%-
ꢓꢗ
ꢐ. ' 02* +ꢗ
ꢐꢄ ' )* +ꢗ
ꢐꢄ ' 21 +ꢗ
ꢓꢗ45
ꢓꢗ45' 6 7 ꢓꢗꢂꢉꢈ
611
8 )1
01
ꢘ
$
$
ꢔ%-
ꢋ#ꢄꢅ
$ꢗꢗ ' 311 $9 $ꢔ% : 0* $9 ꢐ. ' 0*1 +ꢗ
<ꢄ
®
SEMITOP 3
$ꢗ%- ; 0)11 $
Inverse Diode
ꢓꢚ
ꢐ. ' 02* +ꢗ
ꢐꢄ ' )* +ꢗ
ꢐꢄ ' 21 +ꢗ
3*
=*
ꢘ
ꢘ
IGBT Module
ꢓꢚ45
ꢓꢚ-5
ꢓꢚ45' 6 7 ꢓꢚꢂꢉꢈ
ꢋ# ' 01 ꢈꢄ9 ꢑ!ꢏ, ꢄꢌꢂꢃ ꢇ!(ꢃ ꢐ. ' 0*1 +ꢗ
611
20*
ꢘ
ꢘ
SK100GB12T4 T
Module
ꢓꢋ>45-?
ꢘ
+ꢗ
+ꢗ
$
ꢐ(.
@ꢒ1 AAA B02*
@ꢒ1 AAA B0)*
)*11
Target Data
ꢐꢄꢋꢍ
$
ꢘꢗ& 0 ꢈꢌꢂA
ꢌꢄꢉꢏ
Features
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢓꢂꢋꢃꢍꢆ!ꢋꢃꢎ "ꢐꢗ ꢋꢃꢈ#ꢃꢆ!ꢋꢊꢆꢃ
ꢀ
ꢀ
ꢀ
ꢀ
ꢐ ' )* +ꢗ& ꢊꢂꢏꢃꢄꢄ ꢉꢋꢑꢃꢆꢇꢌꢄꢃ ꢄ#ꢃꢅꢌ,ꢌꢃꢎ
Characteristics
Symbol Conditions
IGBT
ꢄ
min.
typ.
max. Units
ꢄꢃꢂꢄꢉꢆ
$
$ꢔ% ' $ꢗ%& ꢓꢗ ' 6&ꢒ ꢈꢘ
*
*&3
=&*
$
ꢈꢘ
ꢈꢘ
ꢂꢘ
ꢂꢘ
$
ꢔ%>ꢋꢑ?
ꢓꢗ%-
$ꢔ% ' 1 $& $ꢗ% ' $ꢗ%-
ꢐ. ' )* +ꢗ
ꢐ. ' 0)* +ꢗ
ꢐ. ' )* +ꢗ
ꢐ. ' 0)* +ꢗ
ꢐ. ' )* +ꢗ
ꢐ. ' 0*1 +ꢗ
ꢐ. ' )*+ꢗ
1&1)
Typical Applications*
ꢓꢔ%-
$ꢗ% ' 1 $& $ꢔ% ' )1 $
0)11
Remarks
$
& $ ' ꢅꢑꢌ# ꢏꢃ(ꢃꢏ (!ꢏꢊꢃ
ꢀ
ꢗ%&ꢄ!ꢋ
ꢚ
$
0&0
0
0&6
0&)
ꢗ%1
$
ꢆꢗ%
$ꢔ% ' 0* $
2&*
ꢈC
ꢈC
$
ꢐ. ' 0*1+ꢗ
0)&*
0&3*
)&)*
$
ꢓꢗꢂꢉꢈ ' 011 ꢘ& $ꢔ% ' 0* $ ꢐ. ' )*+ꢗꢅꢑꢌ#ꢏꢃ(A
ꢐ. ' 0*1+ꢗꢅꢑꢌ#ꢏꢃ(A
)&1*
)&ꢒ*
ꢗ%>ꢄ!ꢋ?
$
ꢗꢌꢃꢄ
*&*ꢒ
1&ꢒ0
ꢂꢚ
ꢂꢚ
ꢗꢉꢃꢄ
$ꢗ% ' )*& $ꢔ% ' 1 $
, ' 0 5DE
ꢗꢆꢃꢄ
Fꢔ
1&6)
2*1
)
ꢂꢚ
ꢂꢗ
G
$
ꢔ%'@2$AAAB0*$
4ꢔꢌꢂꢋ
ꢐ. ' )* +ꢗ
ꢋꢎ>ꢉꢂ?
ꢋꢆ
=6
=*
ꢂꢄ
ꢂꢄ
ꢈI
ꢂꢄ
ꢂꢄ
4ꢔꢉꢂ ' 0= C
$ꢗꢗ ' =11$
%
ꢎꢌHꢎꢋ ' 0311 ꢘH<ꢄ
4ꢔꢉ,, ' 0= C
ꢓꢗ' 011ꢘ
0=&=
*)0
31
ꢉꢂ
ꢋꢎ>ꢉ,,?
ꢋ,
ꢐ. ' 0*1 +ꢗ
ꢎꢌHꢎꢋ ' 0311 ꢘH<ꢄ
$ꢔ%' 80* $
%
01
ꢈI
ꢉ,,
4ꢋꢑ>.@ꢄ?
#ꢃꢆ ꢓꢔꢕꢐ
1&=
JHꢛ
GB-T
1
05-10-2009 DIL
© by SEMIKRON
SK100GB12T4T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
$ꢚ ' $%ꢗ
ꢓꢚꢂꢉꢈ ' 011 ꢘ9 $ꢔ% ' 1 $
ꢐ. ' )* +ꢗꢅꢑꢌ#ꢏꢃ(A
ꢐ. ' 0*1 +ꢗꢅꢑꢌ#ꢏꢃ(A
ꢐ. ' )* +ꢗ
)&)*
)&)
0&6
1&K
K&*
06
)&**
)&*
$
$
$
0&*
$
ꢚ1
ꢐ. ' 0*1 +ꢗ
ꢐ. ' )* +ꢗ
0&0
$
ꢆꢚ
01&*
0ꢒ
ꢈC
ꢈC
ꢐ. ' 0*1 +ꢗ
ꢐ. ' 0*1 +ꢗ
®
ꢓ445
Fꢆꢆ
ꢓꢚ ' 011 ꢘ
*)
0ꢒ
ꢘ
SEMITOP 3
ꢎꢌHꢎꢋ ' 0311 ꢘH<ꢄ
<ꢗ
%
$
ꢗꢗ' =11$
*&)
ꢈI
JHꢛ
"ꢈ
ꢍ
ꢆꢆ
IGBT Module
4ꢋꢑ>.@ꢄ?
5ꢄ
#ꢃꢆ ꢎꢌꢉꢎꢃ
1&32
ꢋꢉ ꢑꢃ!ꢋ ꢄꢌꢂL
)&*
ꢇ
61
SK100GB12T4 T
Temperature sensor
4011
ꢐꢄ'011+ꢗ >4)*'*LC?
ꢒK68*M
C
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃ ꢄꢅꢆꢃꢇ ꢈꢉꢊꢂꢋꢌꢂꢍ ꢈꢉꢎꢊꢏꢃ
ꢐꢆꢃꢂꢅꢑꢒ ꢓꢔꢕꢐ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ
ꢗꢘꢙꢒ ꢋꢃꢅꢑꢂꢉꢏꢉꢍꢖ ꢚꢛ
ꢓꢂꢋꢃꢍꢆ!ꢋꢃꢎ "ꢐꢗ ꢋꢃꢈ#ꢃꢆ!ꢋꢊꢆꢃ
ꢀ
ꢀ
ꢀ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢄꢃꢂꢄꢉꢆ
Typical Applications*
Remarks
$
& $ ' ꢅꢑꢌ# ꢏꢃ(ꢃꢏ (!ꢏꢊꢃ
ꢀ
ꢗ%&ꢄ!ꢋ
ꢚ
GB-T
2
05-10-2009 DIL
© by SEMIKRON
SK100GB12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
05-10-2009 DIL
© by SEMIKRON
SK100GB12T4T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
05-10-2009 DIL
© by SEMIKRON
SK100GB12T4T
ꢗ!ꢄꢃ ꢐ26 >-ꢊꢍꢍꢃꢄꢋꢃꢎ ꢑꢉꢏꢃ ꢎꢌ!ꢈꢃꢋꢃꢆ ,ꢉꢆ ꢋꢑꢃ ꢄꢉꢏꢎꢃꢆ #ꢌꢂꢄ !ꢂꢎ ꢈꢉꢊꢂꢋꢌꢂꢍ #ꢏ!ꢄꢋꢌꢅ #ꢌꢂꢄN )ꢈꢈ?
ꢗ!ꢄꢃ ꢐ26
ꢔꢕ@ꢐ
5
05-10-2009 DIL
© by SEMIKRON
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