SK10GH123 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK10GH123 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：543K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 10 GH 123
$ 3 10 4ꢁ! ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
ꢊ
Values
Units
IGBT
5ꢁ-"
5'-"
6177
8 17
5
5
<
<
&
&
$ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
6. ꢘ66ꢛ
/1 ꢘ11ꢛ
ꢁ
ꢇꢄ > 6 ꢃꢊ; $ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
ꢁ=
$
% @7 ,,, A 607
4ꢁ
?
Inverse/Freewheeling CAL diode
&
$ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
6: ꢘ61ꢛ
/. ꢘ1@ꢛ
<
<
B
®
&B= 3 % &ꢁ=
ꢇꢄ > 6 ꢃꢊ; $ꢊ 3 10 ꢘ:7ꢛ 4ꢁ;
SEMITOP 2
$
% @7 ,,, A 607
4ꢁ
?
$
$
% @7 ,,, A 610
1.7
4ꢁ
4ꢁ
ꢊꢇꢌ
IGBT Module
$ꢉꢏꢃꢋꢍꢅꢔꢊ! 67 ꢊ
ꢊꢂꢔ
5ꢋꢊꢂꢔ
<ꢁ 07 ꢒ+! ꢏ,ꢃ,ꢊ, 6 ꢃꢋꢍ, C 6 ꢊ
1077 C /777
5
SK 10 GH 123
$ 3 10 4ꢁ! ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Preliminary Data
min.
typ.
max. Units
5ꢁ-ꢘꢊꢅꢇꢛ
5'-ꢘꢇꢕꢛ
ꢁꢋꢉꢊ
&ꢁ 3 67 <! $? 3 10 ꢘ610ꢛ 4ꢁ
1!D ꢘ/!/ꢛ
0!0
/!1 ꢘ/!Eꢛ
.!0
5
5
Features
5ꢁ- 3 5'-; &ꢁ 3 7!777@ <
5ꢁ- 3 10 5; 5'- 3 7 5; 6 =ꢒ+
ꢄꢉꢏ &'ꢚ$
@!0
7!0/
ꢍB
GCH
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
Fꢇꢕꢘ?%ꢊꢛ
6!:
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
GCH
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊI
5ꢁꢁ 3 .77 5 ! 5'- 3 8 60 5
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
/7
@0
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
&ꢁ 3 67 <! $? 3 610 4ꢁ
ꢆꢕꢅꢍꢍꢉꢔ! ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ "ꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ #$% ꢂꢍ ꢄꢑꢍꢆꢕꢇꢏꢂꢑꢌꢕ
&'ꢚ$ꢛ
ꢀ
F'ꢂꢍ 3 F'ꢂꢓꢓ 3 07 J
177
/0
-ꢂꢍ A -ꢂꢓꢓ
&ꢍꢈꢑꢆꢇꢋ2ꢉ ꢔꢂꢅꢈ
1!/
ꢃK
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ(
)ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
ꢀ
Inverse/Freewheeling CAL diode
5B 3 5-ꢁ
5ꢘ$ꢎꢛ
ꢏ$
&
B 3 67 <; $? 3 10 ꢘ610ꢛ 4ꢁ
1 ꢘ6!:ꢛ
ꢘ6ꢛ
1!0 ꢘ1!/ꢛ
ꢘ6!1ꢛ
5
5
$? 3 ꢘ610ꢛ 4ꢁ
$? 3 ꢘ610ꢛ 4ꢁ
*) ꢏꢉꢆꢂꢌꢍꢋ+ꢉꢈ! ꢓꢋꢔꢉ ꢍꢂ, - ./0/1
ꢀ
ꢘ:7ꢛ
ꢘ667ꢛ
ꢃJ
Typical Applications
Fꢇꢕꢘ?%ꢊꢛ
1!6
GCH
"ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘ ꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ ꢛ
&ꢍ2ꢉꢏꢇꢉꢏ
"ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*#"
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊI
ꢀ
ꢀ
ꢀ
ꢀ
&
&B 3 67 <; 5F 3 .77 5
61
<
FF=
Lꢏꢏ
ꢈ&BCꢈꢇ 3 %/77 <CMꢊ
6!:
Mꢁ
-
5'- 3 7 5; $? 3 610 4ꢁ
7!@
ꢃK
ꢂꢓꢓ
Mechanical data
=6
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏNꢑꢉ
1
ꢃ
ꢌ
ꢐ
16
ꢁꢅꢊꢉ
"-=&$ꢎ#O
1
$ 0
GH
1
19-10-2005 RAM
© by SEMIKRON
SK 10 GH 123
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
19-10-2005 RAM
© by SEMIKRON
SK 10 GH 123
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
19-10-2005 RAM
© by SEMIKRON
SK 10 GH 123
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ $ 0
'ꢒ
"*''-"$-ꢙ ꢒꢎ)-ꢙ&<=-$-F BꢎF $ꢒ- "ꢎ)ꢙ-F #& " < ꢙ $ꢒ- =ꢎ* $& ' #& " & $ꢒ-
#ꢁꢚI 1 ꢃꢃ
ꢁꢅꢊꢉ $0
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2005 RAM
© by SEMIKRON
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