SK30GBB066T [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK30GBB066T |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK30GBB066T
ꢛ ) 0- 1ꢁ, ꢐꢍꢓꢉꢊꢊ ꢂꢇꢔꢉꢏ2ꢋꢊꢉ ꢊꢄꢉꢆꢋꢒꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
(
ꢛ5 ) 0- 1ꢁ
7++
9+
(
#
#
ꢁ34
ꢛ5 ) /8- 1ꢁ
ꢛꢊ ) 0- 1ꢁ
ꢛꢊ ) 8+ 1ꢁ
ꢁ
*/
ꢁ:;) 0 ꢖ
7+
< 0+
7
#
(
ꢁ:;
ꢁꢍꢂꢃ
(
!34
ꢇꢄꢊꢆ
(
ꢁꢁ ) *7+ (= (!3 > 0+ (= ꢛ5 ) /-+ 1ꢁ
@ꢊ
®
SEMITOP 3
(ꢁ34 ? 7++ (
Inverse Diode
ꢛ5 ) /8- 1ꢁ
ꢛꢊ ) 0- 1ꢁ
ꢛꢊ ) 8+ 1ꢁ
*7
0A
#
#
IGBT Module
%
%:;) 0 ꢖ
7+
#
#
%:;
%ꢍꢂꢃ
ꢇꢄ ) /+ ꢃꢊ= ꢔꢅꢓꢒ ꢊꢋꢍꢉ 2ꢅBꢉ ꢛ5 ) /-+ 1ꢁ
/7+
SK30GBB066T
%4;
Module
#
1ꢁ
1ꢁ
(
ꢇꢗ:;4ꢚ
ꢛB5
C9+ DDD E/8-
C9+ DDD E/0-
0-++
Target Data
ꢛꢊꢇꢌ
(
#ꢁ, / ꢃꢋꢍD
ꢋꢊꢂꢓ
Features
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉ ꢃꢂꢐꢍꢇꢋꢍꢌ
ꢑꢉꢅꢇ ꢇꢏꢅꢍꢊꢒꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢓꢅꢇꢋꢂꢍ ꢇꢏꢂꢐꢌꢔ
ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢕꢂꢍꢈꢉꢈ ꢅꢓꢐꢃꢋꢍꢋꢐꢃ
ꢂꢖꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢗꢘꢁꢙꢚ
ꢛꢏꢉꢍꢆꢔ !ꢙꢛ ꢇꢉꢆꢔꢍꢂꢓꢂꢌ"
ꢁ#$ ꢑꢘ ꢇꢉꢆꢔꢍꢂꢓꢂꢌ" %&ꢘ
ꢍꢇꢉꢌꢏꢅꢇꢉꢈ 'ꢛꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢐꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
ꢛ ) 0- 1ꢁ, ꢐꢍꢓꢉꢊꢊ ꢂꢇꢔꢉꢏ2ꢋꢊꢉ ꢊꢄꢉꢆꢋꢒꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
(
(!3 ) (ꢁ3, ꢁ ) +,9* ꢃ#
-
-,A
7,-
(
ꢃ#
ꢃ#
ꢍ#
ꢍ#
(
!3ꢗꢇꢔꢚ
(!3 ) + (, (ꢁ3 ) (ꢁ34
ꢛ5 ) 0- 1ꢁ
+,++/7
ꢀ
ꢀ
ꢀ
ꢁ34
ꢛ5 ) /0- 1ꢁ
ꢛ5 ) 0- 1ꢁ
(ꢁ3 ) + (, (!3 ) 0+ (
*++
!34
ꢛ5 ) /0- 1ꢁ
ꢛ5 ) 0- 1ꢁ
(
+,F
+,A
/,/
/
Typical Applications*
ꢁ3+
ꢛ5 ) /-+ 1ꢁ
ꢛ5 ) 0-1ꢁ
(
ꢏꢁ3
(!3 ) /- (
/A,*
0A
0-
ꢃG
ꢃG
(
Remarks
ꢛ5 ) /-+1ꢁ
ꢛ5 ) 0-1ꢁꢆꢔꢋꢄꢓꢉBD
ꢛ5 ) /0-1ꢁꢆꢔꢋꢄꢓꢉBD
*-
(
) *+++( #ꢁ,-+ꢑ.,/ꢊ
ꢀ
ꢋꢊꢂꢓ
(
ꢁꢍꢂꢃ ) *+ #, (!3 ) /- (
/,9-
/,7-
/,A-
0,+-
ꢁ3ꢗꢊꢅꢇꢚ
(
ꢁꢋꢉꢊ
/,7*
+,//
ꢍ%
ꢍ%
ꢁꢂꢉꢊ
(
ꢁ3 ) 0-, (!3 ) + (
!3)C8(DDDE/-(
ꢒ ) / ;ꢑ.
ꢁꢏꢉꢊ
H!
+,+-
08-
ꢍ%
ꢍꢁ
(
ꢇꢈꢗꢂꢍꢚ
ꢇꢏ
09
08
ꢍꢊ
ꢍꢊ
ꢃJ
ꢍꢊ
ꢍꢊ
:
!ꢂꢍ ) 0- G
ꢈꢋIꢈꢇ ) 0**- #I@ꢊ
!ꢂꢒꢒ ) 0- G
(ꢁꢁ ) *++(
3ꢂꢍ
ꢇꢈꢗꢂꢒꢒꢚ
ꢇꢒ
ꢁ) *+#
+,F8
*0A
-9
:
ꢛ5 ) /-+ 1ꢁ
ꢈꢋIꢈꢇ ) 0**- #I@ꢊ
(!3) C8IE/-(
3ꢂꢒꢒ
:
/,88
/,7-
ꢃJ
ꢄꢉꢏ !ꢙꢛ
KI&
ꢇꢔꢗ5Cꢊꢚ
GBB-T
1
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
(% ) (3ꢁ
%ꢍꢂꢃ ) *+ #= (!3 ) + (
ꢛ5 ) 0- 1ꢁꢆꢔꢋꢄꢓꢉBD
ꢛ5 ) /-+ 1ꢁꢆꢔꢋꢄꢓꢉBD
ꢛ5 ) 0- 1ꢁ
/,9-
/,9-
/
/,8
/,8
/,/
/
(
(
(
(
%+
ꢛ5 ) /-+ 1ꢁ
ꢛ5 ) 0- 1ꢁ
+,F
/-
(
ꢏ%
0+
ꢃG
ꢃG
ꢛ5 ) /-+ 1ꢁ
ꢛ5 ) /-+ 1ꢁ
/A
0*,*
®
ꢈꢋIꢈꢇ ) 0**- #I@ꢊ
ꢁꢁ) *++(
% ) *+ #
*+
#
::;
SEMITOP 3
Hꢏꢏ
3ꢏꢏ
/,7
@ꢁ
(
+,07
0,/
ꢃJ
KI&
'ꢃ
ꢌ
IGBT Module
:
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
ꢇꢔꢗ5Cꢊꢚꢘ
;
2
ꢇꢂ ꢔꢉꢅꢇ ꢊꢋꢍL
0,0-
0,-
ꢊ
*+
SK30GBB066T
Temperature sensor
:
ꢛꢊ )/++1ꢁ ꢗ:0-)-LGꢚ
9F*<-M
G
/++
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉ ꢃꢂꢐꢍꢇꢋꢍꢌ
ꢑꢉꢅꢇ ꢇꢏꢅꢍꢊꢒꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢓꢅꢇꢋꢂꢍ ꢇꢏꢂꢐꢌꢔ
ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢕꢂꢍꢈꢉꢈ ꢅꢓꢐꢃꢋꢍꢋꢐꢃ
ꢂꢖꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢗꢘꢁꢙꢚ
ꢀ
ꢀ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢛꢏꢉꢍꢆꢔ !ꢙꢛ ꢇꢉꢆꢔꢍꢂꢓꢂꢌ"
ꢁ#$ ꢑꢘ ꢇꢉꢆꢔꢍꢂꢓꢂꢌ" %&ꢘ
ꢍꢇꢉꢌꢏꢅꢇꢉꢈ 'ꢛꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢐꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications*
Remarks
(
) *+++( #ꢁ,-+ꢑ.,/ꢊ
ꢀ
ꢋꢊꢂꢓ
GBB-T
2
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
03-06-2009 DIL
© by SEMIKRON
SK30GBB066T
ꢁꢅꢊꢉ ꢛFA ꢗ4ꢐꢌꢌꢉꢊꢇꢉꢈ ꢔꢂꢓꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ, ꢋꢍ ꢇꢔꢉ Nꢁꢙ, ꢒꢂꢏ ꢊꢂꢓꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢓꢅꢊꢇꢋꢆ ꢃꢂꢐꢍꢇꢋꢍꢌ ꢄꢋꢍꢊO 0ꢃꢃꢚ
ꢁꢅꢊꢉ ꢛ FA
!ꢙꢙCꢛ
5
03-06-2009 DIL
© by SEMIKRON
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