SK60GB125_07 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK60GB125_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：686K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK60GB125
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
(
%1 , -. /ꢁ
3-44
.3
(
5
5
ꢁ0+
&
%1 , 3-. /ꢁ
%ꢊ , -. /ꢁ
%ꢊ , 64 /ꢁ
ꢁ
7.
&
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: -4
34
5
(
ꢁ89
(
'0+
®
ꢇꢄꢊꢆ
(
ꢁꢁ , 744 (; ('0 < -4 (; %1 , 3-. /ꢁ
?ꢊ
SEMITOP 3
(ꢁ0+ = >44 (
Inverse Diode
IGBT Module
&
%1 , 3.4 /ꢁ
%ꢊ , -. /ꢁ
%ꢊ , 64 /ꢁ
.@
76
5
5
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5
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(
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Preliminary Data
%
AB4 CCC D3.4
AB4 CCC D3-.
-.44
*1
%
ꢊꢇꢌ
(
5ꢁ) 3 ꢃꢋꢍC
Features
ꢋꢊꢂꢔ
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ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
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Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
(
(
(
(
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ꢀ
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ꢃ5
ꢁ0+
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-)-
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ꢆꢉ)ꢊꢅꢇ
(
%1 , -. /ꢁ
3)B
3)@
7>
ꢁ04
Typical Applications
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ꢍ"
ꢇꢈꢘꢂꢍꢛ
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>.
ꢍꢊ
ꢍꢊ
ꢃH
ꢍꢊ
ꢍꢊ
8'ꢂꢍ , 77 F
8'ꢂꢓꢓ , 77 F
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ꢁꢍꢂꢃ, B.5
%1 , 3-. /ꢁ
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0ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
&
6)7>
.7E
--
(
0ꢂꢓꢓ
7)7-
ꢃH
8ꢇꢕꢘ1Aꢊꢛ
ꢄꢉꢏ &'ꢚ%
4)>
IJK
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1
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
(" , (0ꢁ
&
"ꢍꢂꢃ , .4 5; ('0 , 4 (
%1 , -. /ꢁꢆꢕꢋꢄꢔꢉ*C
%1 , 3-. /ꢁꢆꢕꢋꢄꢔꢉ*C
%1 , -. /ꢁ
-
(
(
(
3)6
(
"4
%1 , 3-. /ꢁ
%1 , -. /ꢁ
3
3)-
--
(
ꢏ"
ꢃF
ꢃF
%1 , 3-. /ꢁ
%1 , 3-. /ꢁ
3>
®
&
&
ꢈꢋJꢈꢇ , A644 5J?ꢊ
ꢁꢁ, >44(
"ꢍꢂꢃ , .4 5
B4
6
5
SEMITOP 3
889
Lꢏꢏ
0ꢏꢏ
?ꢁ
(
-
ꢃH
IJK
#ꢃ
ꢌ
IGBT Module
8ꢇꢕꢘ1Aꢊꢛꢙ
9ꢊ
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
4)E
-).
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍM
-)-.
ꢐ
74
SK60GB125
Preliminary Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢀ
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ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ
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ꢀ
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ꢀ
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ꢆꢉ)ꢊꢅꢇ
Typical Applications
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&ꢍ*ꢉꢏꢇꢉꢏ
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2
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
13-02-2007 DIL
© by SEMIKRON
SK60GB125
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ %-@ ꢘ+ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ) ꢋꢍ ꢇꢕꢉ $ꢁꢚ) ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊN -ꢃꢃꢛ
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5
13-02-2007 DIL
© by SEMIKRON
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