SKHI22 [SEMIKRON]
Buffer/Inverter Based Peripheral Driver, 3.3A, Hybrid;
| 型号： | SKHI22 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Buffer/Inverter Based Peripheral Driver, 3.3A, Hybrid 驱动 接口集成电路 |
| 文件： | 总16页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
✓ plug + play
✓ protection
✓ easy interface
✓ integrated
DC-DC converter
✓ 4kV isolation
IGBT and MOSFET
SKHI - Drivers
Integrated Components
and Integrated Solutions
SEMIKRON - IGBT/MOSFET Drivers SKHI
SEMIKRON - Driver ASICs SKIC
SKHI-DRIVER
✓
✓
✓
Protection
Easy User Interface
Integrated
DC-DC Converter
4kV Isolation
✓
IGBT Power Stage
SKHI-Driver Family
Features
PCB
PCB mountable
Primary side
ASIC
Driver
Driver
Protection
• TOP BOTTOM
Interlock
✓
✓
✓
✓
✓
• Short Pulse
Suppression
• VCEsat Monitoring
• Undervoltage
Monitoring
✓
✓
✓
✓
✓
✓
Easy User
Interface
• Optional TTL-
compatible Input
• Very high EMI
Immunity
✓
✓
✓
✓
✓
✓
✓
✓
✓
• "Plug and Play"
Integrated
DC-DC
converter
• Very high dv/dt-
Resistance
• High Isolation
✓
✓
Profile of SKHI-advantages
Needs only one non-isolated +15V power supply
(even when using 3 drivers in 3-phase systems)
Very high dv/dt capability by using magnetic transformers, up
to 75 kV/µs
Isolation between control/lGBT up to 4kV
Output peak current capability up to 30A
Interlock top/bottom avoids two IGBTs of same leg being
switched-on at same time
Dead-time, V -supervision, RGON/OFF seperately adjustable to
CE
optimize for user’s specific application
Fault memory informs the control system via an error signal
Supply undervoltage protection
SKHI details that make a difference
SKHI-drivers output stage
MOSFEToutput transistorpair,
with reduced ohmic contact
Improves speed of turn-on
and turn-off with reduced
power losses
Integrated voltage source
Regulated supply voltage
Increased reliability
Provides full power output
pulses without VGE degrada-
tion
+15 V
Under static operating condi-
tions the IGBT needs no gate
drive current because it is volt-
age controlled, but since the
gate input has a large capaci-
tance, a gate drive current of
short duration pulses at turn
on/off has to be generated.
In fig.1 basic circuit drive of an
IGBT is shown.
For a 75A/1200V device (e.g.
SKM75GB123D) fig.2 details
the behaviour of VGE and IG.
The peak gate current reaches
approx 1.3A during the turn-
on time (e.g. 200ns) and still
has to charge the input ca-
pacitance without reducing
VGE, a feature which can only
be achieved with a specialout-
Rgon
Rgoff
Ig
Rin
V
GE
GND
-8V
fig.1- Output stage of an IGBT driver
The voltage of the driver out-
put stage has to be kept stable
all the time to achieve the low-
es t pos s ible VCEs at related
losses.
put buffer rather than an opto-
coupler.
Anotherimportant point is how
fast the IGBT can be switched.
With gate charge Qon, (Qoff re-
spectively), the total power PG
needed to drive the IGBT may
be calculated with the follow-
ing simple equation:
I
G
Furthermore gate resistor RG is
important. It limits the ampli-
tude of the gate current pulses
during turn-on and turn-off. By
varying RG it is possible to con-
trol the switching losses. (De-
tailed informations are given in
➔ application)
V
GE
V=5V/div H=2µs/div
V=0,5A/div
PG = VGE x fx Qon + |-VGE| x fx Qoff
fig.2 SKM75GB123D
Output voltage VGE and output current IG
From this equation the maxi-
mum possible switching fre-
quency f can be calculated.
SKHI short-circuit detection
VCE trip level fixed to the IGBT
in use (factory adjusted)
Easier engineering and
handling
Adjustable delay time for the
VCE signal
Avoids false short circuit sig-
nal to the V monitor
CE
Error fault memory
Avoids repetitive high current
peaks
Error signal output
Informs the main controlboard
When using an IGBT in an in-
verter circuit, short circuit
breakdown of a device be-
comes an important protec-
tion parameter.
The detection of the over-cur-
rent as well as the processing
of the response signal in the
electronic monitoring stage
requires a certain time. To pre-
vent electrical components
from undesired stress and to
achieve a high degree of reli-
ability, it is always an advan-
tage to terminate the over-cur-
rent as quick as possible. To
perform this, the turn-off sig-
nal should be applied to the
Ove r-c urre nts a re ma inly
caused by the following condi-
tions:
• Short-circuited output
• Simultaneous switch-on of a
pair of transistors from same
leg
• Earth fault in the load circuit
driver stage of the IGBT with
the shortest possible delay
(<10µs). The detection of the
During short circuit the VCE de-
tection circuit always monitors
the input “on-signal” and the
collector-emittervoltage;when
the input signal is high after 3
... 5µs VCE is higher than the
normal value range the output
signal turns off (fig.3).
overcurrent is made with V
-
CE
monitoring.
For the efficient detection of a
short-circuit current the col-
lector-emitter voltage (VCE) of
an IGBT can be utilized be-
cause it rapidly increases as a
result of desaturation.
Error
VCE
Fault
On delay
detection
memory
fig.3 - Short-circuit detection
Output
gate buffer
SKHI potential isolation
Provides high isolation be-
tween input and output (up to
4kV, drives IGBTs up to 1700V)
Using coated toroid ferrite
transformers.
High dv/dt immunity between
primary and secondary side
(up to 75kV/µs).
High dv/dt capability by using
isolated transformers instead
of opto-couplers.
The elements of the control
system (IC, µP, etc.) operate
always at a low voltage level of
between 5V to 15V and, there-
fore, noise voltages may influ-
ence their function. For this
reason it is an advantage to
place the interface for poten-
tial separation in the control
section between the electron-
ics and driver stage.
In the case of two-pulse or six-
pulse inverter bridge circuits
the relatively fast turn on and
turn off of the IGBTs cause
steep voltage steps (high dv/
dt values).
Therefore it has to be taken
into account that even if the
interface is located favourably,
disturbances may still occur.
The reasons for this are:
grade opto-couplers, due to
the high coupling capacitance
and relativelyhigh-resistive ter-
mination.
P
u
l
s
e
t
r
a
n
s
f
o
r
m
e
r
N
o
i
s
e
f
i
l
t
r
Outputbuffer
• Noise signals can reach the
control system via the internal
capacitive coupling of the de-
vice used for electrical isola-
tion, noise signals may disturb
the control system.
Signal transformers are there-
fore best suited to transmit the
information to the respective
driver stages. As compared
with opto-couplers they are
distinctly less noise sensitive.
Moreover, theyofferless prob-
lems to achieve a higher isola-
tion voltage (see fig.4).
Isolation
Control
potential
Power-side
Isolated
power-supply
potential
fig.4 - Potential separation with signal
transformer
• In the forward direction the
same noise signals cause un-
wanted oscillations, particu-
larly in the case of commercial
SKHI auxiliary power supply
Powerful voltage supply that
saves external transformers
and allows a compact design
Internal DC/DC converter with
isolated ferrite transformers
Guarantees a safe and power-
ful pulse trigger at the IGBT
gate
Under-voltage supervision on
the primary side
Improves the immunity
Independent powersupplyper
IGBT with very low coupling
capacitance
between switching signals
The use of big mains trans-
formers (50/60Hz) would al-
ways require secondary con-
nected stabilisation networks
with voltage regulators (and big
capacitors) to compensate for
the voltage fluctuations.
the above mentioned problems
and leads to six considerably
smaller transformers with rela-
tively low capacitive coupling .
M
3 ~
Isolated
DC/DC
Converter
Driver stage
Potential
Control
isolation
Since the voltage supply is of-
ten needed for several control
sections this design can be
very impractical.
Electronics
fig.5 - Auxiliary power supply for a 3-phase
inverter
The use of a central RF-gen-
erator from f > 50kHz with ap-
proximately constant alternat-
ing output voltage, eliminates
Product range - Single Driver
SKAI 100
The brake chopperdriverSKAI
100 is for driving SEMIKRON
IGBT type "SKM...GAL...".
The brake chopper levels can
be adjusted to the application.
The SKAI 100 is preset for line
voltage of 400V.
Features:
• PCB driver
• SMT (Surface Mounted
Technology)
• 15V and 24V power supply
• self controlled switching
mode
The SKAI 100 has a circuit in-
tegrated which allows the self
controlled switching of the
IGBT determined only by the
brake resistor. Externalswitch-
ing is also possible.
• external switching signal
also possible
• short circuit protection via
VCE monitoring
• supply undervoltage
protection
VGon= +15V
• overtemperature protection
possible
chopper circuit
VGoff= 0V.
• error memory
• isolation voltage
up to 3,5 kVAC
SKHI 10
Features:
The driver SKHI 10 is for driv-
ing all single IGBTs up to
VCES = 1700V.
• PCB driver
• SMT (Surface Mounted
Technology)
Two versions are available.
SKHI10 drives IGBTs up to
VCES=1200V. SKHI10/17 drives
IGBTs up to VCES =1700V.
5V or 15V input signals, high or
low logic errorsignalfeedback,
separate reset signal for the
errormemory, easyadjustment
of RGon/off offers big flexible
adaptability according to the
application needs.
• 15V power supply
• 5V(TTL) and 15V(CMOS)
control signals
• short circuit protection via
SKHI 10 Recommended Application Range
3000
2000
1000
0
VCE monitoring
1700V
1200V
600V
• soft short circuit turn-off
• supply undervoltage
protection
• error memory
• error output signal
(high or low logic possible)
• isolation voltage 4kVAC
VGon= +15V
10
10
20
30
*
f/kHz
VGoff= -8V.
* given for SEMIKRON IGBT-devices
Product range - Dual Driver
SKHI 21/22
Features:
Switching on the IGBT is made
with +15V.
• PCB-mountable
VGoff of the SKHI 21 is 0V,
VGoff of the SKHI 22 is -15V.
SKHI 21 drives IGBTs up to
VCES = 1200V.
• hybrid technology
• 15V power supply
• 15V (CMOS) control signals
• short circuit protection via
VCE monitoring
SKHI 22 Recommended Application Range
500
250
0
1700V
1200V
600V
SKHI 22 drives IGBTs up to
VCES = 1700V.
• error memory
SKHI 21 is particularly de-
signed to drive MOSFETs (UDS
< 10V)
• interlock of TOP and
BOTTOM switch
• supply undervoltage
protection
10
15
10
15
20
25
30
35
*
The printed circuit board SKPC
2006 is an universal PC-board
for the driver SKHI 21/22.
f/kHz
• isolation up to 4kVAC
• in single channel operation
double power
SKPC 2006 is prepared to carry
allexternaldevices neccessary
to adapt to the application.
The output connectors are po-
sitioned for auxiliary connec-
tions to SEMITRANS 3 mod-
ules.
The hybrid driver SKHI 21/22
is made for soldering into a
printed circuit board.
SKHI 21/22 with SKPC2006
SKHI 21A/22A/B
SKHI 21/22A
full compatible design to SKHI
21/22 but
SKHI 22 A/B Recommended Application Range
1000
750
500
250
0
• nearly double output power
• VGoff of the SKHI 22A is -8V
1700V
1200V
600V
SKHI 22B
same principal design as the
SKHI 22 except
10
15
10
15
20
25
30
35
*
f/kHz
• variable dead time
• optional 5V-control-levels
• nearly double output power
• VGoff of the SKHI 22B is -8V
* given for SEMIKRON IGBT-devices
SKHI 23
SKHI 23/12 drives IGBTs up to
VCES = 1200V.
Features:
• PCB driver
SKHI 23/17 drives IGBTs up to
VCES =1700V.
• SMT (Surface Mounted
Technology)
VCE trip level is preset to 5,2V
forthe SKHI23/12 and 6,3Vfor
the SKHI 23/17.
• 15V power supply
• 5V(TTL) or 15V(CMOS)
control signals
SKHI 23 Recommended Application Range
1500
1250
1000
750
500
250
0
5V or 15V input signals, high or
low logic error signal feed-
back, eas y adjus tment of
RGon/off offers flexible adapta-
tion according to the applica-
tion. This adaptation can be
easily done by soldering addi-
tional electronic devices onto
reserved pins on the PC- board.
SKHI 23 is coated with varnish
to protect against moisture and
dust.
• short circuit protection via
VCE monitoring
1700V
1200V
600V
• soft short circuit turn-off
• supply undervoltage
protection
• error memory
• error output signal (high
or low logic possible)
• interlock of TOP/BOTTOM
(deadtime adjustable)
• isolation voltage 4kVAC
10
15
10
15
20
25
30
35
*
f/kHz
SKHI 23 is available in two
versions.
VGon = +15V
VGoff = -8V.
SKHI 26
Features:
SKHI 26 is a high power dual
driver for driving IGBT moduls
up to VCES = 1200V.
• PCB driver
• SMT (Surface Mounted
Technology)
SKHI 26W uses wire connec-
tors to transfer the control sig-
nals. SKHI26 F uses fibre optic
connectors to transferthe con-
trol signals.
• 15V power supply
• 15V (CMOS) control signals
• SKHI 26 W has wire
connector
SKHI 26 Recommended Application Range
VGon = +15V
4000
3000
2000
1000
0
• SKHI 26 F has fibre optic
control connector
VGoff = -8V.
1200V
600V
• short circuit protection via
VCE monitoring and soft
turn-off
• supply undervoltage
protection
10
15
10
15
20
25
30
35
*
f/kHz
• interlock of TOP/BOTTOM
• isolation voltage 2,5 kVAC
* given for SEMIKRON IGBT-devices
SKHI 27
Features:
SKHI 27 is a high power dual
driverforparalleling a big num-
ber of IGBT modules.
For driving IGBTs, 2 versions
are available.
• PCB driver
• 15V power supply
• 15V (CMOS) control signals
• SKHI 27 W has wire control
connector
SKHI 27 W uses wire connec-
tors to transfer the control sig-
nals. SKHI27 F uses fibre optic
connectors to transferthe con-
trol signals.
• SKHI 27 F has fibre
optic control connector
• short circuit protection via
VCE monitoring
SKHI 27 Recommended Application Range
8000
6000
4000
2000
0
1700V
1200V
VGon = +15V
• supply undervoltage
protection
VGoff = - 8V
• interlock of TOP/BOTTOM
• isolation voltage 4 kVAC
10
15
10
15
20
25
30
35
*
f/kHz
Product range ASIC
SKIC 2001 / SKIC 6001
Features:
sion, interlock of TOP and
BOTTOM IGBT, undervoltage
monitoring of the supply volt-
age as well as a common error
processing.
• 15V/5V power supply
• high voltage
MOSFET technology
• selectable interlock time
• VCE error input
An integrated high frequency
DC-DC converter driver re-
duces complexity of isolated
power supply.
• overcurrent error input
• signal transfer via magnetic
transformers or opto-
couplers possible
Switching signals can be trans-
ferred via magnetic transform-
ers or opto-couplers to reach
high levels of dv/dt and isola-
tion.
• supply undervoltage
monitoring
The ASIC SKIC 2001 for half-
bridge application and SKIC
6001 for three phase bridge
application comprises the pri-
mary side functions of a mod-
ern intelligent IGBT/MOSFET-
driver.
For doing first tests with SKIC
2001, SEMIKRONoffers evalu-
ation boards with the ASIC in-
cluded. LEDs will indicate the
status of signals.
half bridge
Suitable isolation transformers
for customer specific drivers
are available.
They include several protec-
tion and monitoring functions,
such as short pulse suppres-
Evaluation board
* given for SEMIKRON IGBT-devices
Product range - Sixpack Driver
SKHI 61
Features:
• supply undervoltage
SKHI 61 Recommended Application Range
monitoring
• PCB mountable driver
• hybrid technology
• easydesign with MiniSKiiP®,
SEMITRANS®,
400
• variable interlock time
1200V
600V
TOP/BOTTOM (0-4µs)
300
• isolation voltage 2,5 kVAC
200
• max. DC link voltage 850V
ECONOPACK
• VGon=15V, VGoff=-8V
100
• 5V/15V control signals
• short circuit protection via
VCEsat monitoring
• optional integrated brake
0
*
chopper driver available
10
15
10
15
20
25
30
35
f/kHz
• error memory
The sixpack driver SKHI 61
drives IGBT up to VCES=1200V.
Driver kit SKHIBS 01/02
Features:
Two subprints together with a
mag. transformerrepresent the
SEMIKRON driver kit SKHIBS.
The driver kit is for soldering
into a printed circuit board.
SKHIBS 01 is for driving IGBTs
without protection. SKHIBS 02
also protects the IGBT with
SEMIKRON driver principle
"OCP" - Over Current Protec-
tion, using closed loop current
sensors.
• PCB-mountable
• 15V power supply
• 5V/15V control signals
• +15 V/-8 output voltages
• temperature monitoring
• brake chopper driver
integrated
SKHIBS01/02 Recommended Application
• opto-coupler inputs
• supply undervoltage
monitoring
300
200
100
0
1200V
600V
• isolation voltage 2,5 kVAC
These drivers are particularly
suitable for driving MiniSKiiP®
8 as well as SEMITRANS® six-
packs or sevenpack modules.
SKHIBS 01/02 drives 1200V
IGBTs up to 120A at 20 kHz.
10
15
10
15
20
25
30
35
*
f/kHz
* given for SEMIKRON IGBT-devices
SEMIKRON technical application service
As a supplier of a broad line
of p owe r IGBTs /
• Input rectifiers/inverters
• DC link bus bars design with
capacitors
MOSFETs and driv-
ers, we are able to
• IGBT/MOSFET modules
• Drivers
give you valuable
support for your power
application. To save your
engineering time just con-
tact our application engi-
neers for design in support.
• Heatsinks with/without fan
• Specific circuit designs
• SKiiPPACK®
• MiniSKiiP®
Applications
AC-motorinverterwith
discrete drivers
High current power supplies
with discrete drivers
M
3 ~
Big printed circuit board
Leakage inductance
Protection
DC/DC
Converter
Potential
isolation
Driver stage
DC/DC
Converter
Potential
isolation
Driver stage
Protection
Potential
isolation
Control
Control
Electronics
Electronics and
Power supply
Input buffers
Input buffers
AC-motorinverterwith
SKHI drivers
High current powersupplies with
SKHI drivers
M
3
~
No transformers!
No noise!
No auxiliary supplies!
Isolation inside!
Protection inside!
No transformers!
No auxiliary supplies!
Isolation inside!
SKHI61 or
3xSKHI21/22 or
3xSKHI23/26
2xSKHI23 or
2xSKHI23/26 or
4xSKHI10
Protection inside!
Control
Electronics
and
Control
Electronics and
Power supply
CMOS signals!
Power supply
CMOS signals!
Application
Selection of the suitable
driver
UGE/V
To find the suitable driver,
which is able to drive the IGBT,
some details need to be con-
sidered.
23
15
1. The calculation of the maximum switching frequency - The
driver must be able to provide the necessary power (output
current)
necessary
energy for
switch on and
switch off
The individual power of each
internal supply necessary to
drive the IGBT can be found as
a function of the intended
switching frequency and the
energy which has to be used
for charging and discharging
the IGBT.
With the data sheet value ∆Q
for the IGBT and IoutAV given in
the data sheet of the driver the
maximum permissable switch-
ing frequency fswmax can be cal-
culated.
Q/nC
-260
870
1130
-8
fig.6 gate charge characteristic, e.g.
SKM 200 GB 123
Using the driver SKHI 23/12
with IoutAV=50mA leads to
• red lines (positive quadrant) is area of
diagram as given in data sheets
• bright green:
actual energy for switch on and
switch off with plus 15V UGE , -8V UGE
• dark green:
adjustment of bright green into the
positive quadrant to easily obtain ∆Q
reading out of the diagram as given in
data sheets
The necessary driver energy E
can be found from the marked
area, shown in fig.6:
fswmax=IoutAV /∆Q
fswmax=50mA / 1130nC
fswmax=44kHz
E=∆Q * ∆U
According to the calculation
the driver is able to drive
SKM200 GB123Dwith a maxi-
mum switching frequency of
44kHz.
The switching energypercycle
for a SKM 200 GB 123 D is
calculated at:
E=[870nC-(-260nC)] * [15V-(-8)]
E=25,99 µJ
Using the driver SKHI 22 with
IoutAV=20mA then fswmax willbe:
The necessary output power P
of the driver now can be cal-
culated with:
fswmax=IoutAV /∆Q
fswmax=20mA / 1130nC
P=E * fsw=∆Q * ∆U * fsw
fswmax=17,7kHz
The average output current
IoutAV is defined by:
P=IoutAV * ∆U
The comparison of the two
equations forthe output power
P leads to the relation between
SEMIKRON IGBT module SKM 200 GB 123D
∆Q, IoutAV and fsw:
∆Q=IoutAV /fsw
2. The calculation of minimum RGon and RGoff
The maximum peak current
The IGBT switching time is
controlled bycharging and dis-
charging the IGBT’s input ca-
pacitance.
IoutPEAK can be calculated with
the following relation:
IoutPEAK=[VG(on) - VG(off)]/Rg
Increasing the gate peak cur-
rent (with RGon and RGoff the
gate charge currents can be
controlled)the turn-on and turn
off time will be shorter and the
switching losses will be re-
duced.
In the data sheets ofSKHIdriv-
ers the minimal gate resistors
RGonmin and RGoffmin are given.
These values have to be con-
sidered to optimize the gate
drive circuit.
3. The determination of maximum gate charge per pulse
The output capacitors of the
driver must be able to support
the ne c e s s a ry e ne rgy for
charging and discharging the
gate of the IGBT in use.
for the gate charge QG of the
IGBT. The limitation of the
maximum charge per pulse is
given by these capacitors. In
the data sheets ofSKHIdrivers
this maximum charge perpulse
Qout/pulse is given.
The capacitors on the driver
deliver the peak current for
charging the IGBT. Forthis rea-
son the output capacitors of
the drivermust be large enough
Overview
IGBT and MOSFET drivers SKHI, driver Asics SKIC
Country, City
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A
Östereich, Wien
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657-98446
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657-98446
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D
D
+358-9-870 1266 +358-9-870 1308
+358-9-870 1266 +358-9-870 1308
+52
+31
+64
5-300 7922
55- 529 5295
09- 473 2180
5-300 0364
55- 529 5290
09- 473 2181
1- 3224 169
071- 441 141
01- 709 0066
02- 729 4800
02- 221 9599
03-9561-8769
Cesko, Brumov: TNZ
Deutschland, Nürnberg
Baden-Württ., Dettenhausen
Hessen/Saar/Pfalz
Nordbayern, Emskirchen
Nordr.-Westfalen, Neumarkt
Ostdeutschland, Dresden
Schlesw./Nieders., Bremen
Südbayern, Augsburg
911-6559 0
Portugal, Lisboa
Polska, Wroclaw
+351 1- 3224 160/3
7157-561 956
6201-393 090
9104-3888
9181-261033
351-650 3300
421-256 029
821-433 062
48-195 044
+48
+54
071- 442 532
01- 709 0069
RA Argentina, Buenos Aires
RC Taiwan, Taipeh
RCH Chile, Santiago de Chile
+886 02- 758 0533
+56
+61
+82
+7
+46
+27
+65
02- 221 9599
03-9561-3044
032- 346- 2830/3 032- 346- 2834
095-305 77-38
08- 754 9155
012- 333 3733
298 8566
RI
Indonesia, Jakarta
ROK Korea, Puchon City (Seoul)
RUS Russia (ROSSIA), Moskva
S
SA South Africa, Arcadia/Pretoria
SGP Singapore, Singapore
SK Slovensko, Nova Dubnica: INS
SLO Slovenia, Ljubljana
095-305 77-48
08- 754 8592
012- 333 5061
292 4718
0 827 232 97
61- 189 5203
02- 394 1880
212- 250 6590
603- 883 8021
08- 835 3634
02- 261 4245
DK Danmark, Stenløse (København)
España, Barcelona
EST Eesti/Estland, Tallinn (Reval)
Sverige, Sollentuna (Stockholm)
E
93-410 0421
+358 09-870 1266
+20
+33
ET
F
Egypt, Kairo
France, Sartrouville (Paris)
02- 258 4860
01- 3086 8000
+421 0 827 232 97
+386 61- 189 5214
FIN Suomi-Finland, Vantaa (HEL)
GB United Kingdom, Hertford (LON)
+358 09- 870 1266
T
TR
Thailand, Bangkok
Türkiye, Istanbul
+66
+90
+1
+84
+58
02- 757 8222
212- 254 5405
603- 883 8102
08- 864 1640
02- 263 3135
+44
+36
+85
+39
01992- 584 677 01992- 554 942
H
Magyarország, Budapest
HKG Hong Kong, Hongkong
Italia, Pomezia (Roma)
01- 285 3502
22365 3231
06- 911 4241
01- 285 3503
22365 0476
06- 912 1138
USA USA, Hudson NH
VN Vietnam, Ho Chi Minh
YV Venezuela, Caracas
I
SEMIKRON INTERNATIONAL Dr.Fritz Martin GmbH & CO.KG
D-90253 Nürnberg, Deutschland • Tel: +49 911-6559-0 • Fax: +49 911-6559-262 • e-mail: sales.skd@semikron.com
Visit us: http://www.semikron.com
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