SKM400GAL12V [SEMIKRON]
SEMITRANS; SEMITRANS
| 型号： | SKM400GAL12V |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SEMITRANS |
| 文件： | 总5页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM400GAL12V
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
612
467
400
1200
-20 ... 20
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
VCC = 720 V
SEMITRANS® 3
V
V
GE ≤ 20 V
CES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
440
329
400
1200
1980
A
A
A
A
A
Tj = 175 °C
SKM400GAL12V
Features
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
-40 ... 175
°C
Freewheeling diode
IF
• CAL4 = Soft switching 4. Generation
CAL-diode
Tc = 25 °C
Tc = 80 °C
440
329
400
1200
1980
A
A
A
A
A
Tj = 175 °C
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
-40 ... 175
°C
Typical Applications*
Module
It(RMS)
Tstg
• Electronic welders
• DC/DC – converter
• Brake chopper
Tterminal = 80 °C
500
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
• Switched reluctance motor
Remarks
Characteristics
• Case temperature limited to
Tc = 125°C max, recomm.
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Top = -40 ... +150°C, product
IC = 400 A
rel. results valid for Tj = 150°
Tj = 25 °C
VCE(sat)
1.75
2.20
2.20
2.50
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.94
0.88
2.02
3.30
6
1.04
0.98
2.9
3.80
6.5
V
V
m
m
V
mA
mA
nF
nF
nF
nC
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 16 mA
Tj = 25 °C
5.5
0.1
0.3
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
24.04
2.36
2.356
4420
1.9
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
RGint
GAL
© by SEMIKRON
Rev. 3 – 23.03.2011
1
SKM400GAL12V
Characteristics
Symbol Conditions
min.
typ.
350
60
39
700
65
max.
Unit
ns
ns
mJ
ns
ns
VCC = 600 V
td(on)
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 400 A
tr
V
GE = ±15 V
Eon
td(off)
tf
R
R
G on = 3
G off = 3
di/dton = 9800 A/µs
di/dtoff = 5000 A/µs
du/dtoff = 7600 V/
µs
Tj = 150 °C
Eoff
42
mJ
SEMITRANS® 3
Rth(j-c)
per IGBT
0.072
K/W
Inverse diode
VF = VEC
IF = 400 A
Tj = 25 °C
2.20
2.15
2.52
2.47
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.3
0.9
2.3
3.1
450
58
1.5
1.1
2.5
3.4
V
V
m
m
A
SKM400GAL12V
Features
IF = 400 A
IRRM
Qrr
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
di/dtoff = 9500 A/µs
µC
V
V
GE = ±15 V
CC = 600 V
• CAL4 = Soft switching 4. Generation
CAL-diode
Tj = 150 °C
Err
26
mJ
Rth(j-c)
per diode
0.14
K/W
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Freewheeling diode
VF = VEC
IF = 400 A
Tj = 25 °C
2.20
2.15
2.52
2.47
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.3
0.9
2.3
3.1
450
68
1.5
1.1
2.5
3.4
V
V
m
m
A
Typical Applications*
• Electronic welders
• DC/DC – converter
• Brake chopper
IF = 400 A
IRRM
Qrr
di/dtoff = 8800 A/µs
• Switched reluctance motor
µC
V
V
GE = ±15 V
CC = 600 V
Remarks
Tj = 150 °C
Err
30.5
mJ
• Case temperature limited to
Tc = 125°C max, recomm.
Rth(j-c)
per Diode
0.14
20
K/W
Module
LCE
RCC'+EE'
T
op = -40 ... +150°C, product
15
0.25
0.5
nH
m
m
K/W
Nm
Nm
Nm
g
rel. results valid for Tj = 150°
T
T
C = 25 °C
C = 125 °C
terminal-chip
Rth(c-s)
Ms
Mt
per module
to heat sink M6
0.02
0.038
5
5
3
2.5
to terminals M6
w
325
GAL
2
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 3 – 23.03.2011
3
SKM400GAL12V
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
SEMITRANS 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 23.03.2011
5
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