SKM75GB12V_11 [SEMIKRON]

SEMITRANS; SEMITRANS
SKM75GB12V_11
型号: SKM75GB12V_11
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

SEMITRANS
SEMITRANS

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中文:  中文翻译
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SKM75GB12V  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
114  
87  
75  
225  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 720 V  
-20 ... 20  
SEMITRANS® 2  
V
V
GE 20 V  
CES 1200 V  
Tj = 125 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
97  
73  
75  
225  
430  
A
A
A
A
A
Tj = 175 °C  
SKM75GB12V  
Features  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
• V-IGBT = 6. Generation Trench V-IGBT  
(Fuji)  
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
• CAL4 = Soft switching 4. Generation  
CAL-diode  
Tterminal = 80 °C  
200  
-40 ... 125  
4000  
A
°C  
V
• Isolated copper baseplate using DBC  
technology (Direct Copper Bonding)  
• UL recognized, file no. E63532  
• Increased power cycling capability  
• With integrated gate resistor  
• Low switching losses at high di/dt  
Visol  
AC sinus 50Hz, t = 1 min  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Typical Applications*  
• AC inverter drives  
• UPS  
IC = 75 A  
Tj = 25 °C  
VCE(sat)  
1.85  
2.25  
2.30  
2.55  
V
V
V
GE = 15 V  
Tj = 150 °C  
• Electronic welders  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.94  
0.88  
12.13  
18.27  
6
1.04  
0.98  
16.8  
20.93  
6.5  
V
V
m  
m  
V
mA  
mA  
nF  
nF  
nF  
nC  
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
VGE = 15 V  
Top = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
VGE(th)  
ICES  
VGE=VCE, IC = 3 mA  
VGE = 0 V  
5.5  
Tj = 25 °C  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
0.1  
0.3  
V
CE = 1200 V  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
4.5  
0.44  
0.442  
830  
10.0  
258  
32  
6.7  
388  
62  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
ns  
mJ  
ns  
ns  
I
C = 75 A  
V
GE = ±15 V  
R
R
G on = 1.3   
G off = 1.3   
di/dton = 3900 A/µs  
di/dtoff = 1020 A/µs  
du/dtoff = 9000 V/  
µs  
Tj = 150 °C  
Eoff  
7.1  
mJ  
Rth(j-c)  
per IGBT  
0.38  
K/W  
GB  
© by SEMIKRON  
Rev. 5 – 23.03.2011  
1
SKM75GB12V  
Characteristics  
Symbol Conditions  
Inverse diode  
min.  
typ.  
max.  
Unit  
IF = 75 A  
Tj = 25 °C  
VF = VEC  
2.17  
2.11  
2.49  
2.42  
V
V
V
GE = 0 V  
Tj = 150 °C  
chip  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
rF  
1.3  
0.9  
11.6  
16.1  
85  
1.5  
1.1  
13.2  
17.6  
V
V
m  
m  
A
SEMITRANS® 2  
IF = 75 A  
IRRM  
Qrr  
di/dtoff = 2950 A/µs  
10  
µC  
V
V
GE = ±15 V  
CC = 600 V  
Tj = 150 °C  
Err  
4.2  
mJ  
Rth(j-c)  
per diode  
0.58  
30  
K/W  
Module  
LCE  
RCC'+EE'  
SKM75GB12V  
Features  
• V-IGBT = 6. Generation Trench V-IGBT  
(Fuji)  
• CAL4 = Soft switching 4. Generation  
CAL-diode  
• Isolated copper baseplate using DBC  
technology (Direct Copper Bonding)  
• UL recognized, file no. E63532  
• Increased power cycling capability  
• With integrated gate resistor  
• Low switching losses at high di/dt  
nH  
m  
m  
K/W  
Nm  
Nm  
Nm  
g
TC = 25 °C  
0.65  
1
0.04  
terminal-chip  
T
C = 125 °C  
Rth(c-s)  
Ms  
Mt  
per module  
to heat sink M6  
0.05  
5
5
3
2.5  
to terminals M5  
w
160  
Typical Applications*  
• AC inverter drives  
• UPS  
• Electronic welders  
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
T
op = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
GB  
2
Rev. 5 – 23.03.2011  
© by SEMIKRON  
SKM75GB12V  
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2: Rated current vs. temperature IC = f (TC)  
Fig. 4: Typ. turn-on /-off energy = f (RG)  
Fig. 6: Typ. gate charge characteristic  
Fig. 3: Typ. turn-on /-off energy = f (IC)  
Fig. 5: Typ. transfer characteristic  
© by SEMIKRON  
Rev. 5 – 23.03.2011  
3
SKM75GB12V  
Fig. 7: Typ. switching times vs. IC  
Fig. 8: Typ. switching times vs. gate resistor RG  
Fig. 9: Transient thermal impedance  
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'  
Fig. 11: CAL diode peak reverse recovery current  
Fig. 12: Typ. CAL diode peak reverse recovery charge  
4
Rev. 5 – 23.03.2011  
© by SEMIKRON  
SKM75GB12V  
SEMITRANS 2  
GB  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.  
© by SEMIKRON  
Rev. 5 – 23.03.2011  
5

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