MMBT5400 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | MMBT5400 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5400
PNP Silicon Epitaxial Planar Transistor
for high voltage .
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
130
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
V
V
120
5
V
Collector Current Continuous
Power Dissipation
600
mA
mW
Ptot
200
O
Junction Temperature
Storage Temperature Range
TJ
150
C
O
C
TS
-55 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBT5400
O
Characteristics at Tamb=25 C
Symbol
hFE
Min.
40
Max.
180
Unit
-
DC Current Gain
at -VCE=5V, -IC=10mA
Collector Base Breakdown Voltage
at -IC=0.1mA
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
130
-
-
V
V
Collector Emitter Breakdown Voltage
at -IC=1mA
120
Emitter Base Breakdown Voltage
at -IE=0.1mA
5
-
-
V
Collector Cutoff Current
at -VCB=100V
0.05
0.05
0.5
µA
µA
V
Emitter Cutoff Current
at -VEB=3V
-IEBO
-
Collector Emitter Saturation Voltage
at -IC=50mA, -IB=5mA
-VCE(sat)
-
Base Emitter Saturation Voltage
at -IC=50mA, -IB=5mA
-VBE(sat)
-
1
-
V
MHz
pF
Current Gain Bandwidth Product
at -VCE=10V, -IC=10mA
Output Capacitance
fT
100
Cob
-
-
6
8
at -VCB=10V, f=1MHz
Noise Figure
NF
dB
at -IC=0.2mA, -VCE=5V, f=15.7KHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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