MMBTA42 [SEMTECH]
NPN Silicon High Voltage Transistors; NPN硅高压晶体管
| 型号： | MMBTA42 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon High Voltage Transistors |
| 文件： | 总3页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the PNP transistors
MMBTA92 and MMBTA93 are recommended.
SOT-23 Plastic Package
O
Absolute Maximum Ratings (Ta = 25 C)
Value
MMBTA42 MMBTA43
Symbol
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
VCBO
VCEO
VEBO
300
300
6
200
200
6
V
V
V
Collector Current Continuous
Total Device Dissipation FR-5 Board 1)
IC
500
200
1.8
mA
Ptot
mW
O
O
Derate above 25 C
mW/ C
O
Thermal Resistance Junction to Ambient
RθJA
417
C/W
O
C
Junction and Storage Temperature
1) FR-5 = 1 x 0.75 x 0.062 in.
TJ, Ts
-55 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTA42 / MMBTA43
O
Characteristics at Tamb=25 C
Symbol
Min.
Max.
Unit
DC Current Gain
hFE
hFE
hFE
hFE
25
40
40
40
-
-
-
-
-
-
-
-
at VCE=10Vdc, IC=1mA
at VCE=10Vdc, IC=10mA
at VCE=10Vdc,IC=30mA
Both Types
Both Types
MMBTA42
MMBTA43
Collector Emitter Saturation Voltage
at IC=20mA, IB=2mA
VCE(sat)
VCE(sat)
-
-
0.5
0.5
V
V
MMBTA42
MMBTA43
Base Emitter Saturation Voltage
at IC=20mA, IB=2mA
Collector Cutoff Current
at VCB=200V
VBE(sat)
-
0.9
V
ICBO
ICBO
-
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
at VCB=160V
Emitter Cutoff Current
at VEB=6V
IEBO
IEBO
-
0.1
0.1
µA
µA
MMBTA42
MMBTA43
at VEB=4V
Collector Base Breakdown Voltage
at IC=100µA
V(BR)CBO
V(BR)CBO
300
200
-
-
V
V
MMBTA42
MMBTA43
Collector Emitter Breakdown Voltage
at IC=1mA
V(BR)CEO
V(BR)CEO
300
200
-
-
V
V
MMBTA42
MMBTA43
Emitter Base Breakdown Voltage
at IE=100µA
V(BR)EBO
6
-
-
V
Current Gain Bandwidth Product
at VCE=20V, IC=10mA, f=100MHz
Collector Base Capacitance
at VCB=20V, IE=0, f=1MHz
fT
50
MHz
Ccb
Ccb
-
-
3
4
pF
pF
MMBTA42
MMBTA43
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTA42 / MMBTA43
120
VCE =10Vdc
TJ=+125°C
100
80
TJ=25°C
60
40
TJ=-55°C
20
0
0.1
1.0
10
100
IC, Collector Current (mA)
Figure 1. DC Current Gain
80
70
60
100
VCE=20V
f=20MHz
TJ=20°C
Ceb @ 1MHz
10
1
50
40
30
Ccb @ 1MHz
20
0.1
10
1000
0.1
1
10
100
1.0
2.0 3.0 5.0 7.0 10
20
30 50 70
100
Ic, Collector Current (mA)
Figure 3. Current-Gain-Bandwidth
VR, Reverse Voltage (volts)
Figure 2. Capacitance
1.4
A VBE(sat) @-55°C, IC/IB=10
B VBE(on) @ -55°C,VCE=10V
1.2
1.0
0.8
0.6
0.4
C VBE(sat) @ 125°C,IC/IB=10
D VBE(sat) @ 25°C,IC/IB=10
E VBE(on) @ 125°C,VCE=10V
F VBE(on) @ 25°C,VCE=10V
G VCE(sat) @ 125°C,IC/IB=10
H VCE(sat) @ 25°C,IC/IB=10
I VCE(sat) @ -55°C,IC/IB=10
0.2
0.0
0.1
1.0
10
100
IC
, Collector Current (mA)
Figure 4."on" Voltages
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
相关型号：
MMBTA42-13
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明