MMDTA115W [SEMTECH]
PNP Silicon Epitaxial Planar Digital Transistor; PNP硅外延平面晶体管数字
| 型号： | MMDTA115W |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Digital Transistor |
| 文件： | 总1页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMDTA115W
PNP Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
R1
Base
(Input)
R2
Emitter
(Common)
Resistance Values
Type
R1 (KΩ)
R2 (KΩ)
MMDTA115W
100
100
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
-VCEO
VEBO
-IC
Value
50
Unit
V
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
- 40 to + 10
100
V
mA
mW
Total Power Dissipation
Ptot
200
O
C
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
hFE
-ICBO
Min.
82
Typ.
-
Max.
-
Unit
DC Current Gain
-
nA
mA
V
at -VCE = 5 V, -IC = 5 mA
Collector Base Cutoff Current
at -VCB = 50 V
-
-
-
-
-
-
500
0.15
0.3
-
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
Collector Emitter Saturation Voltage
at -IC = 5 mA, -IB = 0.25 mA
-VCEsat
-VI(off)
-VI(on)
Input Off Voltage
0.5
-
V
at -VCE = 5 V, -IC = 100 µA
Input On Voltage
3
V
at -VCE = 0.3 V, -IC = 1 mA
Transition Frequency
at -VCE = 10 V, IE = 5 mA, f = 100 MHz
fT
-
250
-
MHz
R1
70
100
1
130
1.2
KΩ
Input Resistance
Resistance Ratio
R2/R1
0.8
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/04/2007
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